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SQ1922EEH-T1_GE3 Технические параметры
Vishay Intertechnologies SQ1922EEH-T1_GE3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Special Purpose | |
| Марка | ||
| Factory Lead Time | 15 Weeks | |
| Surface Mount | YES | |
| Number of Terminals | 6Terminals | |
| Transistor Element Material | SILICON | |
| Exterior Housing Material | 2 | |
| Drain Current-Max (ID) | 0.84 A | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Package Description | SC-70, 6 PIN | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Part Life Cycle Code | Active |
| Свойство продукта | Значение свойства | |
|---|---|---|
| JESD-609 Code | e3 | |
| ECCN Code | EAR99 | |
| Terminal Finish | TIN | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Reach Compliance Code | unknown | |
| Reference Standard | AEC-Q101 | |
| JESD-30 Code | R-PDSO-G6 | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Polarity/Channel Type | N-CHANNEL | |
| Drain-source On Resistance-Max | 0.6 Ω | |
| DS Breakdown Voltage-Min | 20 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Saturation Current | 1 |
SQ1922EEH-T1_GE3 Документы
- Datasheets5dd2bb6d96aa662499e974627a330a7a.pdf
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