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Vishay Intertechnologies SQ2362ES-T1_GE3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Special Purpose | |
| Марка | ||
| Factory Lead Time | 16 Weeks, 4 Days | |
| Surface Mount | YES | |
| Material | connector housing - PVC-45P | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Exterior Housing Material | 1 | |
| Rohs Code | Yes | |
| Part Life Cycle Code | End Of Life | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | HALOGEN FREE AND ROHS COMPLIANT, TO-236, 3 PIN | |
| Cable cross-section | 2 x 0.75 mm2 | |
| Maximum current | 2 A | |
| Nominal voltage | 250 V | |
| Cable type | RUICHI 2-pin straight power cord | |
| Transport packaging size/quantity | 48*32*27/300 | |
| Gross weight | 69.67 | |
| Turn-on Time-Max (ton) | 40 ns | |
| Turn-off Time-Max (toff) | 51 ns | |
| Package Style | SMALL OUTLINE | |
| Package Shape | RECTANGULAR | |
| Package Body Material | PLASTIC/EPOXY | |
| Operating Temperature-Min | -55 °C | |
| Operating Temperature-Max | 175 °C |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Drain Current-Max (ID) | 4.3 A | |
| JESD-609 Code | e3 | |
| ECCN Code | EAR99 | |
| Connector type | plug CEE7/16 - socket IEC C7 (Female) | |
| Terminal Finish | Matte Tin (Sn) | |
| Color | black | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 | |
| Reach Compliance Code | compliant | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Reference Standard | AEC-Q101 | |
| JESD-30 Code | R-PDSO-G3 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Polarity/Channel Type | N-CHANNEL | |
| JEDEC-95 Code | TO-236AB | |
| Drain-source On Resistance-Max | 0.068 Ω | |
| Pulsed Drain Current-Max (IDM) | 17 A | |
| DS Breakdown Voltage-Min | 60 V | |
| Avalanche Energy Rating (Eas) | 7 mJ | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 26 pF | |
| Saturation Current | 1 | |
| Length | 1800 mm |