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SQJQ160E-T1_GE3 Технические параметры

Vishay Intertechnologies  SQJQ160E-T1_GE3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Special Purpose
Марка
Factory Lead Time 25 Weeks
Surface Mount YES
Number of Terminals 4Terminals
Transistor Element Material SILICON
Exterior Housing Material 1
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Drain Current-Max (ID) 602 A
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Turn-off Time-Max (toff) 119 ns
Turn-on Time-Max (ton) 57 ns
Type of module diode-thyristor
Semiconductor structure double series
Max. off-state voltage 1.8kV
Case SEMIPACK3
Max. forward voltage 1.6V
Max. forward impulse current 9kA
Свойство продукта Значение свойства
Gate current 150mA
Electrical mounting screw
Mechanical mounting screw
Gross weight 410 g
ECCN Code EAR99
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) 40
Reference Standard AEC-Q101
JESD-30 Code R-PSSO-G4
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Polarity/Channel Type N-CHANNEL
Drain-source On Resistance-Max 0.00085 Ω
Pulsed Drain Current-Max (IDM) 655 A
DS Breakdown Voltage-Min 60 V
Avalanche Energy Rating (Eas) 288 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 600 W
Load current 273A
Feedback Cap-Max (Crss) 458 pF

SQJQ160E-T1_GE3 Документы

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