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Vishay Intertechnologies SQJQ160E-T1_GE3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Special Purpose | |
| Марка | ||
| Factory Lead Time | 25 Weeks | |
| Surface Mount | YES | |
| Number of Terminals | 4Terminals | |
| Transistor Element Material | SILICON | |
| Exterior Housing Material | 1 | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Drain Current-Max (ID) | 602 A | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Turn-off Time-Max (toff) | 119 ns | |
| Turn-on Time-Max (ton) | 57 ns | |
| Type of module | diode-thyristor | |
| Semiconductor structure | double series | |
| Max. off-state voltage | 1.8kV | |
| Case | SEMIPACK3 | |
| Max. forward voltage | 1.6V | |
| Max. forward impulse current | 9kA |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Gate current | 150mA | |
| Electrical mounting | screw | |
| Mechanical mounting | screw | |
| Gross weight | 410 g | |
| ECCN Code | EAR99 | |
| Terminal Position | SINGLE | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 | |
| Reach Compliance Code | unknown | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Reference Standard | AEC-Q101 | |
| JESD-30 Code | R-PSSO-G4 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | DRAIN | |
| Polarity/Channel Type | N-CHANNEL | |
| Drain-source On Resistance-Max | 0.00085 Ω | |
| Pulsed Drain Current-Max (IDM) | 655 A | |
| DS Breakdown Voltage-Min | 60 V | |
| Avalanche Energy Rating (Eas) | 288 mJ | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 600 W | |
| Load current | 273A | |
| Feedback Cap-Max (Crss) | 458 pF |