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SQS484ENW-T1_GE3 Технические параметры

Vishay Intertechnologies  SQS484ENW-T1_GE3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Special Purpose
Марка
Factory Lead Time 25 Weeks
Surface Mount YES
Number of Terminals 5Terminals
Transistor Element Material SILICON
Exterior Housing Material 1
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Drain Current-Max (ID) 16 A
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape SQUARE
Package Style SMALL OUTLINE
JESD-609 Code e3
ECCN Code EAR99
Свойство продукта Значение свойства
Terminal Finish TIN
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) 245
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) 40
Reference Standard AEC-Q101
JESD-30 Code S-PDSO-F5
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Polarity/Channel Type N-CHANNEL
Drain-source On Resistance-Max 0.0105 Ω
Pulsed Drain Current-Max (IDM) 64 A
DS Breakdown Voltage-Min 40 V
Avalanche Energy Rating (Eas) 31.2 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
Saturation Current 1

SQS484ENW-T1_GE3 Документы

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