Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок - Все продукты
- /
- Discrete Semiconductor Products
- /
- Transistors - Special Purpose
- /
- SUD50P04-08-GE3
Есть складские запасы
Min. : 1
Mult. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please
sendRFQ, we will
respond immediately
SUD50P04-08-GE3 Технические параметры
Vishay Intertechnologies SUD50P04-08-GE3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Special Purpose | |
| Марка | ||
| Factory Lead Time | 17 Weeks, 4 Days | |
| Surface Mount | YES | |
| Housing material | flame retardant plastic | |
| Number of Terminals | 2Terminals | |
| Transistor Element Material | SILICON | |
| Exterior Housing Material | 1 | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 | |
| Drain Current-Max (ID) | 50 A | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Gross weight | 43.00 | |
| Transport packaging size/quantity | 35*32*26/200 | |
| Installation hole size | Ф22 mm | |
| Measurement range | (AC) - 50…500 V, 0-100A | |
| Working temperature range | -25…+65 °C | |
| Completeness | device; ring current sensor Ф14.5/ 32.5 mm; h - 12.5 mm | |
| JESD-609 Code | e3 | |
| ECCN Code | EAR99 | |
| Type | digital LED volt-ammeter DMS series (AD16-22VAM R) |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Terminal Finish | Matte Tin (Sn) | |
| Color | light color - red | |
| Terminal Position | SINGLE | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 | |
| Depth | 51 mm | |
| Reach Compliance Code | compliant | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| JESD-30 Code | R-PSSO-G2 | |
| Qualification Status | Not Qualified | |
| Lead length | device ~ 100; sensor ~ 178 mm | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Insulation resistance | ≥2 MOhm | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | DRAIN | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | P-CHANNEL | |
| JEDEC-95 Code | TO-252 | |
| Drain-source On Resistance-Max | 0.0081 Ω | |
| Pulsed Drain Current-Max (IDM) | 100 A | |
| DS Breakdown Voltage-Min | 40 V | |
| Avalanche Energy Rating (Eas) | 106 mJ | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 73.5 W | |
| Saturation Current | 1 | |
| Diameter | display - 28.5 mm |
SUD50P04-08-GE3 Документы
- Datasheets5d142bdb43bd0ca346bfc7d057453797.pdf
Индекс :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ