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4N35 Технические параметры

Vishay Semiconductor Opto Division  4N35 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Optoisolators - Transistor, Photovoltaic Output
Марка
Factory Lead Time 14 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case 6-DIP (0.300, 7.62mm)
Number of Pins 6Pins
Supplier Device Package 6-DIP
Breakdown Voltage / V 30V
Collector-Emitter Breakdown Voltage 30V
Current Transfer Ratio-Min 100% @ 10mA
Number of Elements 1 Element
Operating Temperature -55°C~100°C
Packaging Tube
Published 2005
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 100°C
Min Operating Temperature -55°C
Max Power Dissipation 70mW
Base Part Number 4N35
Approval Agency BSI, FIMKO, UL
Voltage - Isolation 5000Vrms
Output Voltage 30V
Output Type Transistor with Base
Свойство продукта Значение свойства
Number of Channels 1Channel
Number of Circuits 1Circuit
Power Dissipation 70mW
Voltage - Forward (Vf) (Typ) 1.3V
Input Type DC
Forward Current 50mA
Max Output Voltage 30V
Output Current per Channel 100mA
Rise Time 3μs
Forward Voltage 1.5V
Collector Emitter Voltage (VCEO) 30V
Max Collector Current 100mA
Reverse Breakdown Voltage 6V
Max Input Current 60mA
Current - DC Forward (If) (Max) 50mA
Input Current 10mA
Turn On / Turn Off Time (Typ) 10μs, 10μs
Reverse Voltage (DC) 6V
Current Transfer Ratio 50 %
Width 8.6mm
REACH SVHC Unknown
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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4N35 Документы

4N35 brand manufacturers: Vishay Semiconductor Opto Division, Anli stock, 4N35 reference price.Vishay Semiconductor Opto Division. 4N35 parameters, 4N35 Datasheet PDF and pin diagram description download.You can use the 4N35 Optoisolators - Transistor, Photovoltaic Output, DSP Datesheet PDF, find 4N35 pin diagram and circuit diagram and usage method of function,4N35 electronics tutorials.You can download from the Anli.