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IRF610PBF Технические параметры

Vishay Siliconix  IRF610PBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 8 Weeks
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Number of Pins 3Pins
Supplier Device Package TO-220AB
Weight 6.000006g
Turn Off Delay Time 14 ns
Power Dissipation (Max) 36W Tc
Number of Elements 1 Element
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25℃ 3.3A Tc
Published 1997
Packaging Tube
Operating Temperature -55°C~150°C TJ
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 1.5Ohm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 200V
Current Rating 3.3A
Number of Channels 1Channel
Voltage 200V
Element Configuration Single
Свойство продукта Значение свойства
Power Dissipation 36W
Turn On Delay Time 8.2 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.5Ohm @ 2A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 140pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 8.2nC @ 10V
Rise Time 17ns
Drain to Source Voltage (Vdss) 200V
Vgs (Max) ±20V
Fall Time (Typ) 8.9 ns
Continuous Drain Current (ID) 3.3A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 200V
Input Capacitance 140pF
Recovery Time 310 ns
Drain to Source Resistance 1.5Ohm
Rds On Max 1.5 Ω
Nominal Vgs 4 V
Width 4.7mm
Length 10.41mm
Height 9.01mm
RoHS Status ROHS3 Compliant
Radiation Hardening No
REACH SVHC Unknown
Lead Free Lead Free

IRF610PBF Документы

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