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Vishay Siliconix IRF640S technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ||
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | |
| Supplier Device Package | D2PAK | |
| Weight | 2.240009g | |
| Current - Continuous Drain (Id) @ 25℃ | 18A Tc | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Power Dissipation (Max) | 3.1W Ta 130W Tc | |
| Turn Off Delay Time | 45 ns | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tube | |
| Published | 2016 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Resistance | 180mOhm | |
| Max Operating Temperature | 150°C | |
| Min Operating Temperature | -55°C | |
| Voltage - Rated DC | 200V | |
| Current Rating | 18A | |
| Number of Channels | 1Channel |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Element Configuration | Single | |
| Turn On Delay Time | 14 ns | |
| FET Type | N-Channel | |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 11A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 1300pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 70nC @ 10V | |
| Rise Time | 51ns | |
| Drain to Source Voltage (Vdss) | 200V | |
| Vgs (Max) | ±20V | |
| Fall Time (Typ) | 36 ns | |
| Continuous Drain Current (ID) | 18A | |
| Gate to Source Voltage (Vgs) | 20V | |
| Drain to Source Breakdown Voltage | 200V | |
| Input Capacitance | 1.3nF | |
| Drain to Source Resistance | 180mOhm | |
| Rds On Max | 180 mΩ | |
| Height | 4.83mm | |
| Length | 10.67mm | |
| Width | 9.65mm | |
| RoHS Status | Non-RoHS Compliant | |
| Lead Free | Contains Lead |