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IRF640S Технические параметры

Vishay Siliconix  IRF640S technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package D2PAK
Weight 2.240009g
Current - Continuous Drain (Id) @ 25℃ 18A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Power Dissipation (Max) 3.1W Ta 130W Tc
Turn Off Delay Time 45 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2016
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 180mOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 200V
Current Rating 18A
Number of Channels 1Channel
Свойство продукта Значение свойства
Element Configuration Single
Turn On Delay Time 14 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 180mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 70nC @ 10V
Rise Time 51ns
Drain to Source Voltage (Vdss) 200V
Vgs (Max) ±20V
Fall Time (Typ) 36 ns
Continuous Drain Current (ID) 18A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 200V
Input Capacitance 1.3nF
Drain to Source Resistance 180mOhm
Rds On Max 180 mΩ
Height 4.83mm
Length 10.67mm
Width 9.65mm
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead

IRF640S Документы

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