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BYC30-1200P Технические параметры

WeEn Semiconductor Co Ltd  BYC30-1200P technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - Bridge Rectifiers
Марка
Surface Mount NO
Diode Element Material SILICON
Number of Terminals 2Terminals
Exterior Housing Material 1
Part Life Cycle Code Active
Ihs Manufacturer WEEN SEMICONDUCTORS CO LTD
Date Of Intro 2018-08-27
Forward Voltage-Max (VF) 3.5 V
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Name Clamp (connector) for 5 wires
Number of clamps 5clamps
Nominal voltage (AC) 250 V
Wire section 0.5...6 (20 - 10AWG) mm2
ECCN Code EAR99
Color orange marking
Additional Feature LOW LEAKAGE CURRENT
HTS Code 8541.10.00.80
Свойство продукта Значение свойства
Terminal Position SINGLE
Terminal Form THROUGH-HOLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Depth 25.07 mm
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reference Standard IEC-60134
JESD-30 Code R-PSFM-T2
Configuration SINGLE
Diode Type RECTIFIER DIODE
Case Connection CATHODE
Output Current-Max 30 A
Number of Phases 1Phase
Rep Pk Reverse Voltage-Max 1200 V
JEDEC-95 Code TO-220AC
Non-rep Pk Forward Current-Max 300 A
Reverse Current-Max 250 μA
Reverse Recovery Time-Max 0.065 μs
Reverse Test Voltage 1200 V
2nd Connector Number of Positions Loaded EFFICIENCY
Height 11.3 mm
Width 38.1 mm

BYC30-1200P Документы

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