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BYV10ED-600P Технические параметры

WeEn Semiconductor Co Ltd  BYV10ED-600P technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - Bridge Rectifiers
Марка
Surface Mount YES
Diode Element Material SILICON
Number of Terminals 2Terminals
Exterior Housing Material 1
Maximum current 3 (6) A
Part Life Cycle Code Active
Ihs Manufacturer WEEN SEMICONDUCTORS CO LTD
Package Description SC-63, DPAK-3/2
Forward Voltage-Max (VF) 2 V
Color key/housing green/black
Capacitors series KGM
Case - mm 3225
Case - inch 1210
Mounting SMD
Kind of capacitor MLCC
Type of capacitor ceramic
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Tolerance ±5%
Свойство продукта Значение свойства
ECCN Code EAR99
Capacitance 12nF
Terminal Position SINGLE
Terminal Form GULL WING
Depth 27.5 (without key) mm
Reach Compliance Code unknown
Reference Standard IEC-60134
JESD-30 Code R-PSSO-G2
Dielectric X7R
Configuration SINGLE
Diode Type RECTIFIER DIODE
Case Connection CATHODE
Number of Phases 1Phase
Rep Pk Reverse Voltage-Max 600 V
JEDEC-95 Code TO-252
Non-rep Pk Forward Current-Max 80 A
Reverse Current-Max 10 μA
Reverse Recovery Time-Max 0.05 μs
2nd Connector Number of Positions Loaded ULTRA FAST SOFT RECOVERY POWER
Saturation Current 1
Height 34.9 mm
Width 25.3 mm

BYV10ED-600P Документы

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