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BT158W-1200T Технические параметры

WeEn Semiconductors  BT158W-1200T technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Thyristors - SCRs
Марка WeEn Semiconductors
ECCN (US) EAR99
HTS 8541.30.00.80
Maximum Rate of Rise of Off-State Voltage (V/us) 1500(Min)
Maximum Rate of Rise of On-State Current (A/us) 150
Maximum Gate Trigger Voltage (V) 1
Maximum Gate Trigger Current (mA) 70
Surge Current Rating (A) 1210
Maximum Holding Current (mA) 200
Repetitive Peak Reverse Voltage (V) 1200
Maximum Gate Peak Inverse Voltage (V) 5
Peak On-State Voltage (V) 1.65@160A
Repetitive Peak Forward Blocking Voltage (V) 1200
Rated Average On-State Current (A) 80
RMS On-State Current (A) 126
Repetitive Peak Off-State Current (mA) 3
Свойство продукта Значение свойства
Maximum Latching Current (mA) 300
Peak Gate Power Dissipation (W) 20
Average Gate Power Dissipation (W) 1
Circuit Fusing Consideration (A²S) 6115
Phase Control No
Minimum Operating Temperature (°C) -40
Maximum Operating Temperature (°C) 150
Supplier Package TO-247
Military No
Mounting Through Hole
Package Height 21.1(Max)
Package Length 15.9(Max)
Package Width 5.2(Max)
PCB changed 3
Tab Tab
Pin Count 3
RoHS Status RoHS Compliant

BT158W-1200T Документы

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