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BUJD105AD,118 Технические параметры
WeEn Semiconductors BUJD105AD,118 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Single | |
| Марка | WeEn Semiconductors | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| Surface Mount | YES | |
| Transistor Element Material | SILICON | |
| Current-Collector (Ic) (Max) | 8A | |
| Number of Elements | 1 Element | |
| Operating Temperature | 150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| JESD-609 Code | e3 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 2Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin (Sn) |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Terminal Position | SINGLE | |
| Terminal Form | GULL WING | |
| Reach Compliance Code | not_compliant | |
| Reference Standard | IEC-60134 | |
| JESD-30 Code | R-PSSO-G2 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Power - Max | 80W | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | NPN | |
| Transistor Type | NPN | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 13 @ 500mA 5V | |
| Current - Collector Cutoff (Max) | 100μA | |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 800mA, 4A | |
| Voltage - Collector Emitter Breakdown (Max) | 400V | |
| RoHS Status | RoHS Compliant |
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