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BYR29X-800P Технические параметры

WeEn Semiconductors  BYR29X-800P technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - RF
Марка WeEn Semiconductors
ECCN (US) EAR99
HTS 8541.10.00.80
Maximum DC Reverse Voltage (V) 800
Peak Reverse Repetitive Voltage (V) 800
Maximum Continuous Forward Current (A) 8
Peak Non-Repetitive Surge Current (A) 88
Peak Forward Voltage (V) 1.7
Peak Reverse Current (uA) 10
Peak Reverse Recovery Time (ns) 55
Minimum Operating Temperature (°C) -40
Maximum Operating Temperature (°C) 175
Свойство продукта Значение свойства
Supplier Package TO-220F
Military No
Mounting Through Hole
Package Height 15.8(Max)
Package Length 10.3(Max)
Package Width 4.6(Max)
PCB changed 2
Tab Tab
Packaging Rail
Type Switching Diode
Pin Count 2
Configuration Single
RoHS Status Yes with exemptions
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BYR29X-800P Документы

BYR29X-800P brand manufacturers: WeEn Semiconductors, Anli stock, BYR29X-800P reference price.WeEn Semiconductors. BYR29X-800P parameters, BYR29X-800P Datasheet PDF and pin diagram description download.You can use the BYR29X-800P Diodes - RF, DSP Datesheet PDF, find BYR29X-800P pin diagram and circuit diagram and usage method of function,BYR29X-800P electronics tutorials.You can download from the Anli.