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BYV60W-600PT2Q Технические параметры

WeEn Semiconductors  BYV60W-600PT2Q technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - RF
Марка WeEn Semiconductors
Mounting Type Through Hole
Package / Case TO-247-2
Supplier Device Package TO-247-2
Tab Tab
PCB changed 2
Package Width 5.2(Max)
Package Length 15.75(Max)
Package Height 20.6(Max)
Mounting Through Hole
Military No
Supplier Package TO-247
AEC Qualified Unknown
Maximum Operating Temperature (°C) 175
Minimum Operating Temperature (°C) -55
Peak Reverse Recovery Time (ns) 79(Typ)
Peak Reverse Current (uA) 10
Peak Forward Voltage (V) 1.7
Peak Non-Repetitive Surge Current (A) 660
Maximum Continuous Forward Current (A) 60
Peak Reverse Repetitive Voltage (V) 600
Maximum DC Reverse Voltage (V) 600
ECCN (US) EAR99
Ir - Reverse Current 10 uA
Maximum Operating Temperature + 175 C
Minimum Operating Temperature - 55 C
Factory Pack QuantityFactory Pack Quantity 600
Mounting Styles Through Hole
Part # Aliases 934072154127
Manufacturer WeEn Semiconductors
Свойство продукта Значение свойства
Brand WeEn Semiconductors
If - Forward Current 60 A
Tradename SABER
Peak Reverse Voltage 600 V
RoHS Details
Package Tube
Mfr WeEn Semiconductors
Product Status Active
Packaging Tube
Series -
Type Switching Diode
Subcategory Diodes & Rectifiers
Pin Count 2
Configuration Single
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 60 A
Operating Temperature - Junction 175°C
Max Surge Current 660 A
Voltage - DC Reverse (Vr) (Max) 600 V
Current - Average Rectified (Io) 60A
Product Type Diodes - General Purpose, Power, Switching
Capacitance @ Vr, F -
Recovery Time 40 ns
Reverse Recovery Time (trr) 79 ns
Product Power Diodes
Vf - Forward Voltage 1.35 V
Product Category Diodes - General Purpose, Power, Switching
RoHS Status Supplier Unconfirmed
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BYV60W-600PT2Q Документы

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