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PHE13003C,126 Технические параметры

WeEn Semiconductors  PHE13003C,126 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка WeEn Semiconductors
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Current-Collector (Ic) (Max) 1.5A
Operating Temperature 150°C TJ
Packaging Tape & Box (TB)
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Свойство продукта Значение свойства
ECCN Code EAR99
Power - Max 2.1W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 5 @ 1A 2V
Current - Collector Cutoff (Max) 100μA
Vce Saturation (Max) @ Ib, Ic 1.5V @ 500mA, 1.5A
Voltage - Collector Emitter Breakdown (Max) 400V
RoHS Status RoHS Compliant
Просмотр сходства
PHE13003C,126 brand manufacturers: WeEn Semiconductors, Anli stock, PHE13003C,126 reference price.WeEn Semiconductors. PHE13003C,126 parameters, PHE13003C,126 Datasheet PDF and pin diagram description download.You can use the PHE13003C,126 Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find PHE13003C,126 pin diagram and circuit diagram and usage method of function,PHE13003C,126 electronics tutorials.You can download from the Anli.