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PHE13007,127 Технические параметры

WeEn Semiconductors  PHE13007,127 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка WeEn Semiconductors
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Transistor Element Material SILICON
Current-Collector (Ic) (Max) 8A
Number of Elements 1 Element
Operating Temperature 150°C TJ
Packaging Tube
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Position SINGLE
Свойство продукта Значение свойства
Base Part Number PHE13007
Reference Standard IEC-134
JESD-30 Code R-PSFM-T3
Configuration SINGLE
Case Connection COLLECTOR
Power - Max 80W
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 8 @ 2A 5V
Current - Collector Cutoff (Max) 200μA
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 350mV @ 1A, 5A
Voltage - Collector Emitter Breakdown (Max) 400V
RoHS Status RoHS Compliant
PHE13007,127 brand manufacturers: WeEn Semiconductors, Anli stock, PHE13007,127 reference price.WeEn Semiconductors. PHE13007,127 parameters, PHE13007,127 Datasheet PDF and pin diagram description download.You can use the PHE13007,127 Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find PHE13007,127 pin diagram and circuit diagram and usage method of function,PHE13007,127 electronics tutorials.You can download from the Anli.