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WG50N65DHWQ Технические параметры

WeEn Semiconductors  WG50N65DHWQ technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка WeEn Semiconductors
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247-3
Mfr WeEn Semiconductors
Package Tube
Product Status Active
Current-Collector (Ic) (Max) 91 A
Test Conditions 400V, 50A, 10Ohm, 15V
Base Product Number WG50N65D
Maximum Gate Emitter Voltage - 20 V, + 20 V
Pd - Power Dissipation 278 W
Maximum Operating Temperature + 150 C
Minimum Operating Temperature - 55 C
Factory Pack QuantityFactory Pack Quantity 600
Mounting Styles Through Hole
Part # Aliases 934072776127
Manufacturer WeEn Semiconductors
Brand WeEn Semiconductors
RoHS Details
Свойство продукта Значение свойства
Collector- Emitter Voltage VCEO Max 650 V
Series -
Operating Temperature -55°C ~ 150°C (TJ)
Packaging Tube
Subcategory IGBTs
Technology Si
Configuration Single
Power Dissipation 278
Input Type Standard
Power - Max 278 W
Product Type IGBT Transistors
Voltage - Collector Emitter Breakdown (Max) 650 V
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 50A
Continuous Collector Current 91
IGBT Type Trench Field Stop
Gate Charge 160 nC
Current - Collector Pulsed (Icm) 200 A
Td (on/off) @ 25°C 66ns/163ns
Switching Energy 1.7mJ (on), 600μJ (off)
Reverse Recovery Time (trr) 105 ns
Product Category IGBT Transistors
Просмотр сходства
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