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WNSCM80120WQ Технические параметры
WeEn Semiconductors WNSCM80120WQ technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | WeEn Semiconductors | |
| Mounting Type | Through Hole | |
| Package / Case | TO-247-3 | |
| Supplier Device Package | TO-247-3 | |
| Package | Bulk | |
| Base Product Number | WNSCM80120 | |
| Current - Continuous Drain (Id) @ 25℃ | 42A (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 20V | |
| Mfr | WeEn Semiconductors | |
| Power Dissipation (Max) | 230W (Ta) | |
| Product Status | Active | |
| Factory Pack QuantityFactory Pack Quantity | 600 | |
| Part # Aliases | 934072808127 | |
| Manufacturer | WeEn Semiconductors |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Brand | WeEn Semiconductors | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Series | - | |
| Subcategory | MOSFETs | |
| Technology | MOSFET (Metal Oxide) | |
| FET Type | N-Channel | |
| Rds On (Max) @ Id, Vgs | 98mOhm @ 20A, 20V | |
| Vgs(th) (Max) @ Id | 4.5V @ 6mA | |
| Input Capacitance (Ciss) (Max) @ Vds | 1350 pF @ 1000 V | |
| Gate Charge (Qg) (Max) @ Vgs | 59 nC @ 20 V | |
| Drain to Source Voltage (Vdss) | 1200 V | |
| Vgs (Max) | +25V, -10V | |
| Product Type | MOSFET | |
| FET Feature | - | |
| Product Category | MOSFET |
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