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W25N02JWSFIF | High Performance QspiNAND Flash Технические параметры

Winbond Electronics Corporation  W25N02JWSFIF | High Performance QspiNAND Flash technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация USB Flash Drives
Марка
EU RoHS Compliant
ECCN (US) 3A991.b.1.a
Automotive No
PPAP No
Cell Type SLC NAND
Chip Density (bit) 2G
Address Bus Width (bit) 32
Number of Bits/Word (bit) 8Bits/Word (bit)s
Number of Words 256MWord
Programmability Yes
Timing Type Synchronous
Max. Access Time (ns) 6
Maximum Erase Time (S) 0.01/Block
Maximum Programming Time (ms) 0.7
Interface Type Serial (SPI, Dual SPI, Quad SPI)
Minimum Operating Supply Voltage (V) 1.7
Typical Operating Supply Voltage (V) 1.8
Maximum Operating Supply Voltage (V) 1.95
Свойство продукта Значение свойства
Programming Voltage (V) 1.7 to 1.95
Operating Current (mA) 35
Program Current (mA) 35
Minimum Operating Temperature (°C) -40
Maximum Operating Temperature (°C) 85
Supplier Temperature Grade Industrial
Command Compatible Yes
ECC Support Yes
Support of Page Mode No
Mounting Surface Mount
Package Height 2.31
Package Width 7.49
Package Length 10.31
PCB changed 16
Supplier Package SOIC W
Packaging Tray
Part Status Active
Pin Count 16
Page Size 2Kbyte
Boot Block No
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