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- P6SMBJ12
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P6SMBJ12 Технические параметры
World Products P6SMBJ12 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | TVS - Diodes | |
| Марка | ||
| Surface Mount | YES | |
| Diode Element Material | SILICON | |
| Number of Terminals | 2Terminals | |
| Package Style | SMALL OUTLINE | |
| Package Body Material | PLASTIC/EPOXY | |
| Power Dissipation (Max) | 5 | |
| Package Shape | RECTANGULAR | |
| Number of Elements | 1 Element | |
| Breakdown Voltage-Nom | 15.1 | |
| JESD-609 Code | e0 | |
| Terminal Finish | TIN LEAD | |
| Additional Feature | UL RECOGNIZED | |
| Technology | AVALANCHE |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Terminal Position | DUAL | |
| Terminal Form | C BEND | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| JESD-30 Code | R-PDSO-C2 | |
| Qualification Status | Not Qualified | |
| Polarity | UNIDIRECTIONAL | |
| Configuration | SINGLE | |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE | |
| Rep Pk Reverse Voltage-Max | 12 | |
| JEDEC-95 Code | DO-214AA | |
| Non-rep Peak Rev Power Dis-Max | 600 | |
| Breakdown Voltage-Min | 13.3 | |
| Clamping Voltage-Max | 22 | |
| Breakdown Voltage-Max | 16.9 |
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