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NCEP023N10T Технические параметры

Wuxi NCE Power Semiconductor  NCEP023N10T technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
RoHS true
Drain Source Voltage (Vdss) 100V
Drain Source On Resistance (RDS(on)@Vgs,Id) 1.85mΩ@10V,140A
Power Dissipation (Pd) 365W
Gate Threshold Voltage (Vgs(th)@Id) 3V@250uA
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NCEP023N10T Документы

NCEP023N10T brand manufacturers: Wuxi NCE Power Semiconductor, Anli stock, NCEP023N10T reference price.Wuxi NCE Power Semiconductor. NCEP023N10T parameters, NCEP023N10T Datasheet PDF and pin diagram description download.You can use the NCEP023N10T Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find NCEP023N10T pin diagram and circuit diagram and usage method of function,NCEP023N10T electronics tutorials.You can download from the Anli.