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YJQ4666B Технические параметры

Yangzhou Yangjie Elec Tech  YJQ4666B technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка
Mounting Type Surface Mount
Package / Case 6-UDFN Exposed Pad
Supplier Device Package 6-DFN (2x2)
Package Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;
Current - Continuous Drain (Id) @ 25℃ 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Mfr Yangzhou Yangjie Electronic Technology Co.,Ltd
Power Dissipation (Max) 2.2W (Tc)
Product Status Active
Свойство продукта Значение свойства
Operating Temperature -55°C ~ 150°C (TJ)
Series -
Technology MOSFET (Metal Oxide)
FET Type P-Channel
Rds On (Max) @ Id, Vgs 36.5mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds 852 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs 40.1 nC @ 4.5 V
Drain to Source Voltage (Vdss) 20 V
Vgs (Max) ±10V
FET Feature -
YJQ4666B brand manufacturers: Yangzhou Yangjie Elec Tech, Anli stock, YJQ4666B reference price.Yangzhou Yangjie Elec Tech. YJQ4666B parameters, YJQ4666B Datasheet PDF and pin diagram description download.You can use the YJQ4666B Transistors - FETs, MOSFETs - Arrays, DSP Datesheet PDF, find YJQ4666B pin diagram and circuit diagram and usage method of function,YJQ4666B electronics tutorials.You can download from the Anli.