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YJQ2012A Технические параметры
Yangzhou Yangjie Electronics Co Ltd YJQ2012A technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Special Purpose | |
| Марка | ||
| Surface Mount | YES | |
| Number of Terminals | 6Terminals | |
| Transistor Element Material | SILICON | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | YANGZHOU YANGJIE ELECTRONICS CO LTD | |
| Package Description | , | |
| Date Of Intro | 2020-09-24 | |
| Drain Current-Max (ID) | 12 A | |
| Number of Elements | 1 Element | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| ECCN Code | EAR99 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| HTS Code | 8541.29.00.95 | |
| Terminal Position | DUAL | |
| Terminal Form | NO LEAD | |
| Reach Compliance Code | compliant | |
| JESD-30 Code | S-PDSO-N6 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | DRAIN | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | N-CHANNEL | |
| Drain-source On Resistance-Max | 0.013 Ω | |
| Pulsed Drain Current-Max (IDM) | 50 A | |
| DS Breakdown Voltage-Min | 20 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 2.5 W | |
| Feedback Cap-Max (Crss) | 140 pF | |
| Power Dissipation Ambient-Max | 2.5 W |
Индекс :
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