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| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Surface Mount | Number of Terminals | Access Time-Max | Clock Frequency-Max (fCLK) | Ihs Manufacturer | Manufacturer Part Number | Moisture Sensitivity Levels | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Reflow Temperature-Max (s) | Risk Rank | Rohs Code | Supply Voltage-Nom (Vsup) | JESD-609 Code | ECCN Code | Terminal Finish | Additional Feature | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | JESD-30 Code | Qualification Status | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Number of Ports | Operating Mode | Supply Current-Max | Organization | Output Characteristics | Seated Height-Max | Memory Width | Standby Current-Max | Memory Density | I/O Type | Memory IC Type | Refresh Cycles | Sequential Burst Length | Interleaved Burst Length | Access Mode | Self Refresh | Length | Width | 
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Mfr. ТипNT5CC64M16GP-DIIAnlielectronics Тип | Nanya | 
                  DDR3 1GB 64MX16 800MHZ BGA96
                Сборник данных
                 
                  Сравнение | Min.:1 Mult.:1 | YES | 96 | 0.225 ns | 800 MHz | NANYA TECHNOLOGY CORP | NT5CC64M16GP-DII | 3 | 67108864 words | 64000000 | 85 °C | -40 °C | PLASTIC/EPOXY | VFBGA | VFBGA, BGA96,9X16,32 | BGA96,9X16,32 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | Active | NOT SPECIFIED | 5.63 | Yes | 1.35 V | e1 | - | Tin/Silver/Copper (Sn/Ag/Cu) | AUTO/SELF REFRESH | BOTTOM | BALL | NOT SPECIFIED | 1 | 0.8 mm | compliant | R-PBGA-B96 | Not Qualified | 1.45 V | 1.35 V | INDUSTRIAL | 1.283 V | 1 | SYNCHRONOUS | 0.2 mA | 64MX16 | 3-STATE | 1 mm | 16 | 0.01 A | 1073741824 bit | COMMON | DDR DRAM | 8192 | 8 | 8 | MULTI BANK PAGE BURST | YES | 13 mm | 8 mm | |||
| NT5CC64M16GP-DII | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr. ТипNT6TL128M32AQ-G2Anlielectronics Тип | Nanya | 
                  LPDDR2-S4 SDRAM 4GB DENSITY
                Сборник данных
                 
                  Сравнение | Min.:1 Mult.:1 | YES | 168 | 5.5 ns | 333 MHz | NANYA TECHNOLOGY CORP | NT6TL128M32AQ-G2 | - | 134217728 words | 128000000 | 85 °C | -25 °C | PLASTIC/EPOXY | VFBGA | VFBGA, BGA168,23X23,20 | BGA168,23X23,20 | SQUARE | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | Obsolete | NOT SPECIFIED | 5.68 | Yes | 1.8 V | - | - | - | AUTO/SELF REFRESH; ALSO REQURIES 1.2V | BOTTOM | BALL | NOT SPECIFIED | 1 | 0.5 mm | compliant | S-PBGA-B168 | Not Qualified | 1.95 V | 1.2,1.8 V | OTHER | 1.7 V | 1 | SYNCHRONOUS | - | 128MX32 | 3-STATE | 0.79 mm | 32 | - | 4294967296 bit | COMMON | DDR DRAM | 8192 | 4,8,16 | 4,8,16 | MULTI BANK PAGE BURST | YES | 12 mm | 12 mm | |||
| NT6TL128M32AQ-G2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr. ТипNT5CC64M16GP-EKIAnlielectronics Тип | Nanya | 
                  DRAM Chip DDR3L SDRAM 1Gbit 64Mx16 1.35V 96-Pin VFBGA
                Сборник данных
                 
                  Сравнение | Min.:1 Mult.:1 | YES | 96 | 0.195 ns | 933 MHz | NANYA TECHNOLOGY CORP | NT5CC64M16GP-EKI | - | 67108864 words | 64000000 | 85 °C | -40 °C | PLASTIC/EPOXY | VFBGA | VFBGA, BGA96,9X16,32 | BGA96,9X16,32 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | Active | NOT SPECIFIED | 5.66 | Yes | 1.35 V | e1 | - | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) | AUTO/SELF REFRESH | BOTTOM | BALL | NOT SPECIFIED | 1 | 0.8 mm | compliant | R-PBGA-B96 | Not Qualified | 1.45 V | 1.35 V | INDUSTRIAL | 1.283 V | 1 | SYNCHRONOUS | 0.232 mA | 64MX16 | 3-STATE | 1 mm | 16 | 0.011 A | 1073741824 bit | COMMON | DDR DRAM | 8192 | 8 | 8 | MULTI BANK PAGE BURST | YES | 13 mm | 8 mm | |||
| NT5CC64M16GP-EKI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr. ТипNT5CC128M16IP-DITAnlielectronics Тип | Nanya | 
                  DRAM Chip DDR3L SDRAM 2Gbit 128Mx16 1.35V 96-Pin VFBGA
                Сборник данных
                 
                  Сравнение | Min.:1 Mult.:1 | YES | 96 | 0.225 ns | 800 MHz | NANYA TECHNOLOGY CORP | NT5CC128M16IP-DIT | - | 134217728 words | 128000000 | 85 °C | -20 °C | PLASTIC/EPOXY | VFBGA | VFBGA, BGA96,9X16,32 | BGA96,9X16,32 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | Obsolete | NOT SPECIFIED | 5.3 | Yes | 1.35 V | - | - | - | AUTO/SELF REFRESH | BOTTOM | BALL | NOT SPECIFIED | 1 | 0.8 mm | compliant | R-PBGA-B96 | Not Qualified | 1.45 V | 1.35 V | OTHER | 1.283 V | 1 | SYNCHRONOUS | 0.22 mA | 128MX16 | 3-STATE | 1 mm | 16 | 0.012 A | 2147483648 bit | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | MULTI BANK PAGE BURST | YES | 13 mm | 8 mm | |||
| NT5CC128M16IP-DIT | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr. ТипNT6DM32M32BC-T1Anlielectronics Тип | Nanya | 
                  Mobile DDR 1Gb 32Mx32 200MHz
                Сборник данных
                 
                  Сравнение | Min.:1 Mult.:1 | YES | 90 | 5 ns | - | NANYA TECHNOLOGY CORP | NT6DM32M32BC-T1 | - | 33554432 words | 32000000 | 85 °C | -25 °C | PLASTIC/EPOXY | VFBGA | VFBGA, | - | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | Active | - | 1.54 | - | 1.8 V | - | - | - | AUTO/SELF REFRESH | BOTTOM | BALL | - | 1 | 0.8 mm | compliant | R-PBGA-B90 | - | 1.95 V | - | OTHER | 1.7 V | 1 | SYNCHRONOUS | - | 32MX32 | - | 1 mm | 32 | - | 1073741824 bit | - | DDR DRAM | - | - | - | FOUR BANK PAGE BURST | YES | 13 mm | 8 mm | |||
| NT6DM32M32BC-T1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr. ТипNT5CB64M16GP-DIAnlielectronics Тип | Nanya | 
                  DRAM Chip DDR3L SDRAM 1Gbit 64Mx16 1.5V 96-Pin VFBGA
                Сборник данных
                 
                  Сравнение | Min.:1 Mult.:1 | YES | 96 | 0.225 ns | 800 MHz | NANYA TECHNOLOGY CORP | NT5CB64M16GP-DI | - | 67108864 words | 64000000 | 85 °C | - | PLASTIC/EPOXY | VFBGA | VFBGA, BGA96,9X16,32 | BGA96,9X16,32 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | Active | NOT SPECIFIED | 5.66 | Yes | 1.5 V | - | EAR99 | - | AUTO/SELF REFRESH | BOTTOM | BALL | NOT SPECIFIED | 1 | 0.8 mm | compliant | R-PBGA-B96 | Not Qualified | 1.575 V | 1.5 V | OTHER | 1.425 V | 1 | SYNCHRONOUS | 0.212 mA | 64MX16 | 3-STATE | 1 mm | 16 | 0.011 A | 1073741824 bit | COMMON | DDR DRAM | 8192 | 8 | 8 | MULTI BANK PAGE BURST | YES | 13 mm | 8 mm | |||
| NT5CB64M16GP-DI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr. ТипNT5CB256M8IN-EKAnlielectronics Тип | Nanya | 
                  DRAM Chip DDR3 SDRAM 2Gbit 256Mx8 1.5V 78-Pin VFBGA
                Сборник данных
                 
                  Сравнение | Min.:1 Mult.:1 | YES | 78 | 0.195 ns | 933 MHz | NANYA TECHNOLOGY CORP | NT5CB256M8IN-EK | - | 268435456 words | 256000000 | 85 °C | - | PLASTIC/EPOXY | VFBGA | VFBGA, BGA78,9X13,32 | BGA78,9X13,32 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | Obsolete | NOT SPECIFIED | 5.22 | Yes | 1.5 V | - | EAR99 | - | AUTO/SELF REFRESH | BOTTOM | BALL | NOT SPECIFIED | 1 | 0.8 mm | compliant | R-PBGA-B78 | Not Qualified | 1.575 V | 1.5 V | OTHER | 1.425 V | 1 | SYNCHRONOUS | 0.24 mA | 256MX8 | 3-STATE | 1 mm | 8 | 0.012 A | 2147483648 bit | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | MULTI BANK PAGE BURST | YES | 10.5 mm | 8 mm | |||
| NT5CB256M8IN-EK | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr. ТипNT5TU128M8HE-ACAnlielectronics Тип | Nanya | 
                  DRAM Chip DDR2 SDRAM 1Gbit 128Mx8 1.8V 60-Pin BGA
                Сборник данных
                 
                  Сравнение | Min.:1 Mult.:1 | YES | 60 | 0.4 ns | 400 MHz | NANYA TECHNOLOGY CORP | NT5TU128M8HE-AC | - | 134217728 words | 128000000 | 85 °C | - | PLASTIC/EPOXY | TFBGA | TFBGA, BGA60,9X11,32 | BGA60,9X11,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Active | NOT SPECIFIED | 5.38 | Yes | 1.8 V | - | - | - | AUTO/SELF REFRESH | BOTTOM | BALL | NOT SPECIFIED | 1 | 0.8 mm | compliant | R-PBGA-B60 | Not Qualified | 1.9 V | 1.8 V | OTHER | 1.7 V | 1 | SYNCHRONOUS | 0.18 mA | 128MX8 | 3-STATE | 1.2 mm | 8 | - | 1073741824 bit | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | MULTI BANK PAGE BURST | YES | 10 mm | 8 mm | |||
| NT5TU128M8HE-AC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr. ТипNT6TL256T32BQ-G0Anlielectronics Тип | Nanya | 
                  DRAM Chip Mobile LPDDR2 SDRAM 8Gbit 256Mx32 1.8V/1.2V
                Сборник данных
                 
                  Сравнение | Min.:1 Mult.:1 | YES | 168 | - | - | NANYA TECHNOLOGY CORP | NT6TL256T32BQ-G0 | - | 268435456 words | 256000000 | 85 °C | -25 °C | PLASTIC/EPOXY | VFBGA | VFBGA, | - | SQUARE | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | Active | NOT SPECIFIED | 5.68 | Yes | 1.2 V | - | - | - | AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY | BOTTOM | BALL | NOT SPECIFIED | 1 | 0.5 mm | compliant | S-PBGA-B168 | - | 1.3 V | - | OTHER | 1.14 V | 1 | SYNCHRONOUS | - | 256MX32 | - | 0.8 mm | 32 | - | 8589934592 bit | - | DDR DRAM | - | - | - | MULTI BANK PAGE BURST | YES | 12 mm | 12 mm | |||
| NT6TL256T32BQ-G0 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr. ТипNT5CB128M16IP-FLAnlielectronics Тип | Nanya | 
                  DRAM Chip DDR3 SDRAM 2Gbit 128Mx16 1.5V 96-Pin VFBGA
                Сборник данных
                 
                  Сравнение | Min.:1 Mult.:1 | YES | 96 | 0.18 ns | 1066 MHz | NANYA TECHNOLOGY CORP | NT5CB128M16IP-FL | - | 134217728 words | 128000000 | 85 °C | - | PLASTIC/EPOXY | VFBGA | VFBGA, BGA96,9X16,32 | BGA96,9X16,32 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | Obsolete | NOT SPECIFIED | 5.46 | Yes | 1.5 V | - | EAR99 | - | AUTO/SELF REFRESH | BOTTOM | BALL | NOT SPECIFIED | 1 | 0.8 mm | compliant | R-PBGA-B96 | Not Qualified | 1.575 V | 1.5 V | OTHER | 1.425 V | 1 | SYNCHRONOUS | 0.26 mA | 128MX16 | 3-STATE | 1 mm | 16 | 0.016 A | 2147483648 bit | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | MULTI BANK PAGE BURST | YES | 13 mm | 8 mm | |||
| NT5CB128M16IP-FL | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr. ТипNT5CB64M16GP-DIIAnlielectronics Тип | Nanya | 
                  DRAM Chip DDR3L SDRAM 1Gbit 64Mx16 1.5V 96-Pin VFBGA
                Сборник данных
                 
                  Сравнение | Min.:1 Mult.:1 | YES | 96 | 0.225 ns | 800 MHz | NANYA TECHNOLOGY CORP | NT5CB64M16GP-DII | - | 67108864 words | 64000000 | 85 °C | -40 °C | PLASTIC/EPOXY | VFBGA | VFBGA, BGA96,9X16,32 | BGA96,9X16,32 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | Active | NOT SPECIFIED | 5.64 | Yes | 1.5 V | - | - | - | AUTO/SELF REFRESH | BOTTOM | BALL | NOT SPECIFIED | 1 | 0.8 mm | compliant | R-PBGA-B96 | Not Qualified | 1.575 V | 1.5 V | INDUSTRIAL | 1.425 V | 1 | SYNCHRONOUS | 0.212 mA | 64MX16 | 3-STATE | 1 mm | 16 | 0.011 A | 1073741824 bit | COMMON | DDR DRAM | 8192 | 8 | 8 | MULTI BANK PAGE BURST | YES | 13 mm | 8 mm | |||
| NT5CB64M16GP-DII | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr. ТипNT5TU64M16HG-ACIAnlielectronics Тип | Nanya | 
                  Commercial, Industrial and Automotive DDR2 1Gb SDRAM
                Сборник данных
                 
                  Сравнение | Min.:1 Mult.:1 | YES | 84 | 0.4 ns | 400 MHz | NANYA TECHNOLOGY CORP | NT5TU64M16HG-ACI | - | 67108864 words | 64000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA84,9X15,32 | BGA84,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Active | NOT SPECIFIED | 1.78 | Yes | 1.8 V | e1 | - | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) | AUTO/SELF REFRESH | BOTTOM | BALL | NOT SPECIFIED | 1 | 0.8 mm | compliant | R-PBGA-B84 | Not Qualified | 1.9 V | 1.8 V | INDUSTRIAL | 1.7 V | 1 | SYNCHRONOUS | 0.2 mA | 64MX16 | 3-STATE | 1.2 mm | 16 | 0.009 A | 1073741824 bit | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | MULTI BANK PAGE BURST | YES | 12.5 mm | 8 mm | |||
| NT5TU64M16HG-ACI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr. ТипNT5TU64M16HG-BEAnlielectronics Тип | Nanya | 
                  DRAM Chip DDR2 SDRAM 1Gbit 64Mx16 1.8V 84-Pin BGA
                Сборник данных
                 
                  Сравнение | Min.:1 Mult.:1 | YES | 84 | 0.35 ns | 533 MHz | NANYA TECHNOLOGY CORP | NT5TU64M16HG-BE | - | 67108864 words | 64000000 | 85 °C | - | PLASTIC/EPOXY | TFBGA | TFBGA, BGA84,9X15,32 | BGA84,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Active | NOT SPECIFIED | 5.65 | Yes | 1.8 V | - | - | - | AUTO/SELF REFRESH | BOTTOM | BALL | NOT SPECIFIED | 1 | 0.8 mm | compliant | R-PBGA-B84 | Not Qualified | 1.9 V | 1.8 V | OTHER | 1.7 V | 1 | SYNCHRONOUS | - | 64MX16 | 3-STATE | 1.2 mm | 16 | - | 1073741824 bit | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | MULTI BANK PAGE BURST | YES | 12.5 mm | 8 mm | |||
| NT5TU64M16HG-BE | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr. ТипNT5CC64M16GP-EKAnlielectronics Тип | Nanya | 
                  DDR3 1GB 64MX16 933MHZ BGA96
                Сборник данных
                 
                  Сравнение | Min.:1 Mult.:1 | YES | 96 | 0.195 ns | 933 MHz | NANYA TECHNOLOGY CORP | NT5CC64M16GP-EK | - | 67108864 words | 64000000 | 85 °C | - | PLASTIC/EPOXY | VFBGA | VFBGA, BGA96,9X16,32 | BGA96,9X16,32 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | Active | NOT SPECIFIED | 5.64 | Yes | 1.35 V | e1 | EAR99 | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) | AUTO/SELF REFRESH | BOTTOM | BALL | NOT SPECIFIED | 1 | 0.8 mm | compliant | R-PBGA-B96 | Not Qualified | 1.45 V | 1.35 V | OTHER | 1.283 V | 1 | SYNCHRONOUS | 0.232 mA | 64MX16 | 3-STATE | 1 mm | 16 | 0.011 A | 1073741824 bit | COMMON | DDR DRAM | 8192 | 8 | 8 | MULTI BANK PAGE BURST | YES | 13 mm | 8 mm | |||
| NT5CC64M16GP-EK | 
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