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| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Factory Lead Time | Mount | Surface Mount | Number of Pins | Number of Terminals | Access Time-Max | Clock Frequency-Max (fCLK) | Ihs Manufacturer | Manufacturer Part Number | Moisture Sensitivity Levels | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Supply Voltage-Nom (Vsup) | Usage Level | JESD-609 Code | Pbfree Code | ECCN Code | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Additional Feature | HTS Code | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Pin Count | JESD-30 Code | Qualification Status | Operating Supply Voltage | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Max Supply Voltage | Min Supply Voltage | Memory Size | Number of Ports | Nominal Supply Current | Operating Mode | Supply Current-Max | Access Time | Data Bus Width | Organization | Output Characteristics | Seated Height-Max | Memory Width | Address Bus Width | Density | Standby Current-Max | Memory Density | Max Frequency | Screening Level | I/O Type | Memory IC Type | Refresh Cycles | Sequential Burst Length | Interleaved Burst Length | Access Mode | Self Refresh | Length | Width |
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  | Mfr. ТипIS42S32200E-7B-TRAnlielectronics Тип | Integrated Silicon Solution, Inc. (ISSI) |
DRAM Chip SDRAM 64M-Bit 2M X 32 3.3V 90-Pin TFBGA T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 13 Weeks, 6 Days | - | YES | - | 90 | 5.5 ns | 143 MHz | INTEGRATED SILICON SOLUTION INC | IS42S32200E-7B-TR | - | 2097152 words | 2000000 | 70 °C | - | PLASTIC/EPOXY | FBGA | - | BGA90,9X15,32 | RECTANGULAR | GRID ARRAY, FINE PITCH | Obsolete | - | - | 5.92 | - | No | 3.3 V | - | - | - | - | - | - | - | - | - | BOTTOM | BALL | - | - | 0.8 mm | unknown | - | R-PBGA-B90 | Not Qualified | - | - | 3.3 V | COMMERCIAL | - | - | - | - | - | - | - | 0.14 mA | - | - | 2MX32 | 3-STATE | - | 32 | - | - | 0.002 A | 67108864 bit | - | - | COMMON | SYNCHRONOUS DRAM | 4096 | 1,2,4,8,FP | 1,2,4,8 | - | - | - | - | ||
| IS42S32200E-7B-TR | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS41LV16105B-60KAnlielectronics Тип | Integrated Silicon Solution, Inc. (ISSI) |
DRAM 16M 1Mx16 60ns
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | YES | - | 42 | 60 ns | - | INTEGRATED SILICON SOLUTION INC | IS41LV16105B-60K | 3 | 1048576 words | 1000000 | 70 °C | - | PLASTIC/EPOXY | SOJ | 0.400 INCH, PLASTIC, SOJ-42 | SOJ42,.44 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOJ | NOT SPECIFIED | 5.77 | - | No | 3.3 V | - | e0 | - | EAR99 | Tin/Lead (Sn/Pb) | - | - | RAS ONLY/CAS BEFORE RAS/HIDDEN/AUTO REFRESH | 8542.32.00.02 | DUAL | J BEND | NOT SPECIFIED | 1 | 1.27 mm | unknown | 42 | R-PDSO-J42 | Not Qualified | - | 3.6 V | 3.3 V | COMMERCIAL | 3 V | - | - | - | 1 | - | ASYNCHRONOUS | 0.16 mA | - | - | 1MX16 | 3-STATE | 3.75 mm | 16 | - | - | 0.001 A | 16777216 bit | - | - | COMMON | FAST PAGE DRAM | 1024 | - | - | FAST PAGE | NO | 27.305 mm | 10.16 mm | ||
| IS41LV16105B-60K | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS41LV16105B-50KAnlielectronics Тип | Integrated Silicon Solution, Inc. (ISSI) |
DRAM 16M 1Mx16 50ns
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | YES | - | 42 | 50 ns | - | INTEGRATED SILICON SOLUTION INC | IS41LV16105B-50K | 3 | 1048576 words | 1000000 | 70 °C | - | PLASTIC/EPOXY | SOJ | 0.400 INCH, PLASTIC, SOJ-42 | SOJ42,.44 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOJ | NOT SPECIFIED | 5.77 | - | No | 3.3 V | - | e0 | - | EAR99 | Tin/Lead (Sn/Pb) | - | - | RAS ONLY/CAS BEFORE RAS/HIDDEN/AUTO REFRESH | 8542.32.00.02 | DUAL | J BEND | NOT SPECIFIED | 1 | 1.27 mm | unknown | 42 | R-PDSO-J42 | Not Qualified | - | 3.6 V | 3.3 V | COMMERCIAL | 3 V | - | - | - | 1 | - | ASYNCHRONOUS | 0.16 mA | - | - | 1MX16 | 3-STATE | 3.75 mm | 16 | - | - | 0.001 A | 16777216 bit | - | - | COMMON | FAST PAGE DRAM | 1024 | - | - | FAST PAGE | NO | 27.305 mm | 10.16 mm | ||
| IS41LV16105B-50K | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS42S32400D-7TLI-TRAnlielectronics Тип | Integrated Silicon Solution, Inc. (ISSI) |
IC Sdram 128MBIT 143MHZ 86TSOP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | YES | - | 86 | 5.4 ns | - | INTEGRATED SILICON SOLUTION INC | IS42S32400D-7TLI-TR | 3 | 4194304 words | 4000000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | SOP, | - | RECTANGULAR | SMALL OUTLINE | Obsolete | TSOP2 | 40 | 5.11 | - | Yes | 3.3 V | - | e3 | - | EAR99 | Matte Tin (Sn) | - | - | AUTO/SELF REFRESH | 8542.32.00.02 | DUAL | GULL WING | 260 | 1 | 0.5 mm | compliant | 86 | R-PDSO-G86 | Not Qualified | - | 3.6 V | - | INDUSTRIAL | 3 V | - | - | - | 1 | - | SYNCHRONOUS | - | - | - | 4MX32 | - | 1.2 mm | 32 | - | - | - | 134217728 bit | - | - | - | SYNCHRONOUS DRAM | - | - | - | FOUR BANK PAGE BURST | YES | 22.22 mm | 10.16 mm | ||
| IS42S32400D-7TLI-TR | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS46DR16640A-25EBLA1-TRAnlielectronics Тип | Integrated Silicon Solution, Inc. (ISSI) |
AUTOMOTIVE (TC: -40 TO 95C),1G, 1.8V, DDR2, 64MX16, 400MHZ
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | YES | - | 84 | 0.4 ns | 400 MHz | INTEGRATED SILICON SOLUTION INC | IS46DR16640A-25EBLA1-TR | - | 67108864 words | 64000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA84,9X15,32 | BGA84,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | - | - | 5.69 | Compliant | Yes | 1.8 V | Automotive grade | - | - | - | - | 95 °C | -40 °C | AUTO/SELF REFRESH | - | BOTTOM | BALL | - | 1 | 0.8 mm | compliant | - | R-PBGA-B84 | Not Qualified | - | 1.9 V | 1.8 V | INDUSTRIAL | 1.7 V | 1.9 V | 1.7 V | 128 MB | 1 | - | SYNCHRONOUS | 0.36 mA | 400 ps | 16 b | 64MX16 | 3-STATE | 1.2 mm | 16 | - | - | 0.015 A | 1073741824 bit | 400 MHz | AEC-Q100 | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | MULTI BANK PAGE BURST | YES | 13.65 mm | 8 mm | ||
| IS46DR16640A-25EBLA1-TR | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS45S16320B-7CTNA1-TRAnlielectronics Тип | Integrated Silicon Solution, Inc. (ISSI) |
DRAM 512M (32Mx16) 143MHz SDRAM 3.3v
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | INTEGRATED SILICON SOLUTION INC | IS45S16320B-7CTNA1-TR | - | - | - | - | - | - | - | , | - | - | - | Obsolete | - | - | 5.84 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | unknown | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| IS45S16320B-7CTNA1-TR | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS42S16160D-6BAnlielectronics Тип | Integrated Silicon Solution, Inc. (ISSI) |
DRAM Chip SDRAM 256M-Bit 16M x 16 3.3V 54-Pin TFBGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 13 Weeks, 6 Days | Surface Mount | YES | 54 | 54 | 5.4 ns | 166 MHz | INTEGRATED SILICON SOLUTION INC | IS42S16160D-6B | 3 | 16777216 words | 16000000 | 70 °C | - | PLASTIC/EPOXY | TFBGA | 13 X 8 MM, 0.80 MM PITCH, MS-207, TFBGA-54 | BGA54,9X9,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | DSBGA | NOT SPECIFIED | 5.34 | Non-Compliant | No | 3.3 V | - | e0 | No | EAR99 | Tin/Lead (Sn/Pb) | 70 °C | 0 °C | AUTO/SELF REFRESH | 8542.32.00.24 | BOTTOM | BALL | NOT SPECIFIED | 1 | 0.8 mm | unknown | 54 | R-PBGA-B54 | Not Qualified | 3.3 V | 3.6 V | 3.3 V | COMMERCIAL | 3 V | 3.6 V | 3 V | 32 MB | 1 | 180 mA | SYNCHRONOUS | 0.18 mA | 5.4 ns | 16 b | 16MX16 | 3-STATE | 1.2 mm | 16 | 15 b | 256 Mb | 0.003 A | 268435456 bit | 166 MHz | - | COMMON | SYNCHRONOUS DRAM | 8192 | 1,2,4,8,FP | 1,2,4,8 | FOUR BANK PAGE BURST | YES | 13 mm | 8 mm | ||
| IS42S16160D-6B | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS46DR16320B-3DBLA2-TRAnlielectronics Тип | Integrated Silicon Solution, Inc. (ISSI) |
AUTOMOTIVE (TC: -40 TO 105C), 512M, 1.8V, DDR2, 32MX16, 333
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | YES | - | 84 | 0.45 ns | 333 MHz | INTEGRATED SILICON SOLUTION INC | IS46DR16320B-3DBLA2-TR | 1 | 33554432 words | 32000000 | 105 °C | -40 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA84,9X15,32 | BGA84,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | - | NOT SPECIFIED | 5.84 | - | Yes | 1.8 V | Automotive grade | e3 | Yes | - | Matte Tin (Sn) | - | - | AUTO/SELF REFRESH | - | BOTTOM | BALL | 225 | 1 | 0.8 mm | compliant | - | R-PBGA-B84 | Not Qualified | - | 1.9 V | 1.8 V | INDUSTRIAL | 1.7 V | - | - | - | 1 | - | SYNCHRONOUS | 0.34 mA | - | - | 32MX16 | 3-STATE | 1.2 mm | 16 | - | - | 0.008 A | 536870912 bit | - | AEC-Q100 | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | FOUR BANK PAGE BURST | YES | 13 mm | 10.5 mm | ||
| IS46DR16320B-3DBLA2-TR | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS43DR16640A-25DBLI-TRAnlielectronics Тип | Integrated Silicon Solution, Inc. (ISSI) |
1G, 1.8V, DDR2, 64Mx16, 400Mhz @ CL5, 84 ball BGA (8mmx13.65mm) RoHS, IT, T&R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | YES | - | 84 | 0.4 ns | 400 MHz | INTEGRATED SILICON SOLUTION INC | IS43DR16640A-25DBLI-TR | - | 67108864 words | 64000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA84,9X15,32 | BGA84,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | - | - | 5.41 | - | Yes | 1.8 V | - | - | - | - | - | - | - | AUTO/SELF REFRESH | - | BOTTOM | BALL | - | 1 | 0.8 mm | compliant | - | R-PBGA-B84 | Not Qualified | - | 1.9 V | 1.8 V | INDUSTRIAL | 1.7 V | - | - | - | 1 | - | SYNCHRONOUS | 0.36 mA | - | - | 64MX16 | 3-STATE | 1.2 mm | 16 | - | - | 0.015 A | 1073741824 bit | - | - | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | MULTI BANK PAGE BURST | YES | 13.65 mm | 8 mm | ||
| IS43DR16640A-25DBLI-TR | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS43DR16128-3DBLI-TRAnlielectronics Тип | Integrated Silicon Solution, Inc. (ISSI) |
DRAM 2G (128Mx16) 333Mhz DDR2 1.8v
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | INTEGRATED SILICON SOLUTION INC | IS43DR16128-3DBLI-TR | - | - | - | - | - | - | - | - | - | - | - | End Of Life | - | - | 5.75 | - | Yes | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | compliant | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| IS43DR16128-3DBLI-TR | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS46DR16320B-3DBLA1-TRAnlielectronics Тип | Integrated Silicon Solution, Inc. (ISSI) |
AUTOMOTIVE (TC: -40 TO 95C), 512M, 1.8V, DDR2, 32MX16, 333M
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | YES | - | 84 | 0.45 ns | 333 MHz | INTEGRATED SILICON SOLUTION INC | IS46DR16320B-3DBLA1-TR | 1 | 33554432 words | 32000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA84,9X15,32 | BGA84,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | - | NOT SPECIFIED | 5.84 | Compliant | Yes | 1.8 V | Automotive grade | e3 | Yes | - | Matte Tin (Sn) | 95 °C | -40 °C | AUTO/SELF REFRESH | - | BOTTOM | BALL | 225 | 1 | 0.8 mm | compliant | - | R-PBGA-B84 | Not Qualified | - | 1.9 V | 1.8 V | INDUSTRIAL | 1.7 V | 1.9 V | 1.7 V | 64 MB | 1 | - | SYNCHRONOUS | 0.34 mA | 450 ps | 16 b | 32MX16 | 3-STATE | 1.2 mm | 16 | - | - | 0.008 A | 536870912 bit | 333 MHz | AEC-Q100 | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | FOUR BANK PAGE BURST | YES | 13 mm | 10.5 mm | ||
| IS46DR16320B-3DBLA1-TR | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS43DR16320B-3DBLI-TRAnlielectronics Тип | Integrated Silicon Solution, Inc. (ISSI) |
DRAM Chip DDR2 SDRAM 512M-Bit 32M x 16 1.8V 84-Pin TWBGA T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 14 Weeks | - | YES | - | 84 | 0.45 ns | 333 MHz | INTEGRATED SILICON SOLUTION INC | IS43DR16320B-3DBLI-TR | 1 | 33554432 words | 32000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA84,9X15,32 | BGA84,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | - | NOT SPECIFIED | 5.83 | - | Yes | 1.8 V | - | e3 | Yes | - | Matte Tin (Sn) | - | - | AUTO/SELF REFRESH | - | BOTTOM | BALL | 225 | 1 | 0.8 mm | compliant | - | R-PBGA-B84 | Not Qualified | - | 1.9 V | 1.8 V | INDUSTRIAL | 1.7 V | - | - | - | 1 | - | SYNCHRONOUS | 0.34 mA | - | - | 32MX16 | 3-STATE | 1.2 mm | 16 | - | - | 0.008 A | 536870912 bit | - | - | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | FOUR BANK PAGE BURST | YES | 13 mm | 10.5 mm | ||
| IS43DR16320B-3DBLI-TR | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS43TR81280ED-15HBLIAnlielectronics Тип | Integrated Silicon Solution, Inc. (ISSI) |
DRAM Chip DDR3 SDRAM with ECC 1G-Bit 128Mx8 1.5V 78-Ball FBGA (Alt: IS43TR81280ED-15HBLI)
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | YES | - | 78 | - | - | INTEGRATED SILICON SOLUTION INC | IS43TR81280ED-15HBLI | 3 | 134217728 words | 128000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | FBGA-78 | - | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Active | - | 10 | 5.61 | - | Yes | 1.5 V | - | e1 | - | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | - | - | PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH | - | BOTTOM | BALL | 260 | 1 | 0.8 mm | compliant | - | R-PBGA-B78 | - | - | 1.575 V | - | INDUSTRIAL | 1.425 V | - | - | - | 1 | - | SYNCHRONOUS | - | - | - | 128MX8 | - | 1.2 mm | 8 | - | - | - | 1073741824 bit | - | - | - | DDR DRAM | - | - | - | MULTI BANK PAGE BURST | YES | 10.5 mm | 8 mm | ||
| IS43TR81280ED-15HBLI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS45S16400F-7CTNA2-TRAnlielectronics Тип | Integrated Silicon Solution, Inc. (ISSI) |
DRAM 64M (4Mx16) 143MHz SDRAM 3.3v
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | INTEGRATED SILICON SOLUTION INC | IS45S16400F-7CTNA2-TR | - | - | - | - | - | - | - | , | - | - | - | Obsolete | - | - | 5.84 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | unknown | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| IS45S16400F-7CTNA2-TR | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS46DR16160A-5BBLA1-TRAnlielectronics Тип | Integrated Silicon Solution, Inc. (ISSI) |
DRAM Chip DDR2 SDRAM 256M-Bit 16M x 16 1.8V 84-Pin TWBGA T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | - | YES | - | 84 | 0.6 ns | 200 MHz | INTEGRATED SILICON SOLUTION INC | IS46DR16160A-5BBLA1-TR | - | 16777216 words | 16000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA84,9X15,32 | BGA84,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | - | - | 5.84 | - | Yes | 1.8 V | Automotive grade | - | - | - | - | - | - | AUTO/SELF REFRESH | - | BOTTOM | BALL | - | 1 | 0.8 mm | compliant | - | R-PBGA-B84 | Not Qualified | - | 1.9 V | 1.8 V | INDUSTRIAL | 1.7 V | - | - | - | 1 | - | SYNCHRONOUS | 0.21 mA | - | - | 16MX16 | 3-STATE | 1.2 mm | 16 | - | - | 0.005 A | 268435456 bit | - | AEC-Q100 | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | FOUR BANK PAGE BURST | YES | 12.5 mm | 8 mm | ||
| IS46DR16160A-5BBLA1-TR | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS45S16800E-7CTNA2-TRAnlielectronics Тип | Integrated Silicon Solution, Inc. (ISSI) |
DRAM Chip SDRAM 128M-Bit 8M x 16 3.3V 54-Pin TSOP-II T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | - | YES | - | 54 | 5.4 ns | 143 MHz | INTEGRATED SILICON SOLUTION INC | IS45S16800E-7CTNA2-TR | - | 8388608 words | 8000000 | 105 °C | -40 °C | PLASTIC/EPOXY | TSOP | - | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | - | - | 5.84 | - | Yes | 3.3 V | - | - | - | - | - | - | - | - | - | DUAL | GULL WING | - | - | 0.8 mm | unknown | - | R-PDSO-G54 | Not Qualified | - | - | 3.3 V | INDUSTRIAL | - | - | - | - | - | - | - | 0.16 mA | - | - | 8MX16 | 3-STATE | - | 16 | - | - | 0.001 A | 134217728 bit | - | - | COMMON | SYNCHRONOUS DRAM | 4096 | 1,2,4,8,FP | 1,2,4,8 | - | - | - | - | ||
| IS45S16800E-7CTNA2-TR | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS42VM32200G-75BLI-TRAnlielectronics Тип | Integrated Silicon Solution, Inc. (ISSI) |
DRAM 64M (2Mx32) 133MHz Mobile SDRAM 1.8v
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | YES | - | 90 | 6 ns | 133 MHz | INTEGRATED SILICON SOLUTION INC | IS42VM32200G-75BLI-TR | - | 2097152 words | 2000000 | 85 °C | -40 °C | PLASTIC/EPOXY | FBGA | FBGA, BGA90,9X15,32 | BGA90,9X15,32 | RECTANGULAR | GRID ARRAY, FINE PITCH | Active | - | - | 5.75 | - | Yes | 1.8 V | - | - | - | - | - | - | - | - | - | BOTTOM | BALL | - | - | 0.8 mm | compliant | - | R-PBGA-B90 | Not Qualified | - | - | 1.8 V | INDUSTRIAL | - | - | - | - | - | - | - | 0.075 mA | - | - | 2MX32 | 3-STATE | - | 32 | - | - | 0.00003 A | 67108864 bit | - | - | COMMON | SYNCHRONOUS DRAM | 4096 | 1,2,4,8,FP | 1,2,4,8 | - | - | - | - | ||
| IS42VM32200G-75BLI-TR | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS43DR16640A-3DBI-TRAnlielectronics Тип | Integrated Silicon Solution, Inc. (ISSI) |
1G, 1.8V, DDR2, 64MX16, 333MHZ @ CL5, 84 BALL BGA (8MMX13.65
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | YES | - | 84 | 0.45 ns | 333 MHz | INTEGRATED SILICON SOLUTION INC | IS43DR16640A-3DBI-TR | - | 67108864 words | 64000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | 8 X 13.65 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, MO-207, TWBGA-84 | BGA84,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | - | - | 5.92 | - | No | 1.8 V | - | - | - | - | - | - | - | AUTO/SELF REFRESH | - | BOTTOM | BALL | - | 1 | 0.8 mm | unknown | - | R-PBGA-B84 | Not Qualified | - | 1.9 V | 1.8 V | INDUSTRIAL | 1.7 V | - | - | - | 1 | - | SYNCHRONOUS | 0.35 mA | - | - | 64MX16 | 3-STATE | 1.2 mm | 16 | - | - | 0.015 A | 1073741824 bit | - | - | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | MULTI BANK PAGE BURST | YES | 13.65 mm | 8 mm | ||
| IS43DR16640A-3DBI-TR | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS45S16100F-7TLA1-TRAnlielectronics Тип | Integrated Silicon Solution, Inc. (ISSI) |
DRAM Automotive,16M,3.3V SDRAM,1Mx16,143Mhz
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | INTEGRATED SILICON SOLUTION INC | IS45S16100F-7TLA1-TR | - | - | - | - | - | - | - | , | - | - | - | Obsolete | - | - | 5.84 | Compliant | - | - | - | - | - | - | - | 85 °C | -40 °C | - | - | - | - | - | - | - | compliant | - | - | - | - | - | - | - | - | 3.6 V | 3 V | 2 MB | - | - | - | - | 5.5 ns | 16 b | - | - | - | - | - | - | - | - | 143 MHz | - | - | - | - | - | - | - | - | - | - | ||
| IS45S16100F-7TLA1-TR | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIS43R16160B-5BLI-TRAnlielectronics Тип | Integrated Silicon Solution, Inc. (ISSI) |
256M, 2.5V, DDR, 16MX16, 200MHZ, 60 BALL BGA (8MMX13MM) ROHS
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | INTEGRATED SILICON SOLUTION INC | IS43R16160B-5BLI-TR | - | - | - | - | - | - | - | , | - | - | - | Obsolete | - | - | 5.84 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | unknown | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| IS43R16160B-5BLI-TR |
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