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ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
Классификация Марка Марка О Anli Запрос цены
ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
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Изображение Тип Марка Объяснение Установленная цена Количество RoHS Factory Lead Time Lifecycle Status Mount Mounting Type Package / Case Surface Mount Number of Pins Supplier Device Package Weight Diode Element Material Breakdown Voltage / V Number of Elements Operating Temperature Packaging Published Series JESD-609 Code Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Terminal Finish Max Operating Temperature Min Operating Temperature Additional Feature HTS Code Capacitance Voltage - Rated DC Max Power Dissipation Terminal Position Terminal Form Peak Reflow Temperature (Cel) Reach Compliance Code Current Rating Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count JESD-30 Code Qualification Status Configuration Element Configuration Diode Type Current - Reverse Leakage @ Vr Power Dissipation Output Current Voltage - Forward (Vf) (Max) @ If Case Connection Forward Current Max Reverse Leakage Current Max Surge Current Output Current-Max Current - Average Rectified (Io) Forward Voltage Average Rectified Current Number of Phases Peak Reverse Current Max Repetitive Reverse Voltage (Vrrm) Peak Non-Repetitive Surge Current Non-rep Pk Forward Current-Max Max Forward Surge Current (Ifsm) Voltage - Peak Reverse (Max) Breakdown Voltage-Min Reverse Voltage (DC) Height Length Width Radiation Hardening REACH SVHC RoHS Status Lead Free
IXYS VUO62-14NO7
Mfr. Тип
VUO62-14NO7
Anlielectronics Тип

IXYS
Diode Rectifier Bridge Single 1.4KV 60A 5-Pin PWS-D
Сборник данных Сравнение
    Min.:1
    Mult.:1
    		 16 Weeks - Chassis Mount, Screw Chassis Mount PWS-D - 5 - - SILICON - 1 -40°C~150°C TJ Bulk 2000 - - yes Active 1 (Unlimited) 5 - - - - - UL RECOGNIZED - - - - UPPER UNSPECIFIED NOT SPECIFIED - - NOT SPECIFIED VUO62 5 - Not Qualified BRIDGE, 6 ELEMENTS - Three Phase 300μA @ 1400V 110W - 1.8V @ 150A ISOLATED - 1.5mA 550A 48A - 1.3V 63A 3 - - 595A - - 1.4kV - - 30mm 72mm 42mm - - ROHS3 Compliant Lead Free
    VUO62-14NO7
    VUO62-14NO7

    IXYS
    RoHS :
    Инкапсуляция : -
    Есть складские запасы : -
    1 : -
    ON Semiconductor KBU4K
    Mfr. Тип
    KBU4K
    Anlielectronics Тип

    		ON Semiconductor
    BRIDGE RECT 1PHASE 800V 4A KBU
    Сборник данных Сравнение
      Min.:1
      Mult.:1
      		 - - Through Hole Through Hole 4-SIP, KBU - 4 - 9.00001g - - 1 -55°C~150°C TJ Bulk - - - - Obsolete 1 (Unlimited) - - - - - - - - - 800V - - - - - 4A - KBU4K - - - - - Single Phase 5μA @ 50V 6.6W 4A 1V @ 4A - - 5μA 200A - - 1V - - - - 200A - - - - - 19.3mm 23.7mm 7.1mm - - RoHS Compliant Lead Free
      KBU4K
      KBU4K

      ON Semiconductor
      RoHS :
      Инкапсуляция : -
      Есть складские запасы : -
      1 : -
      Diodes Incorporated GBPC2508W
      Mfr. Тип
      GBPC2508W
      Anlielectronics Тип

      		Diodes Incorporated
      BRIDGE RECT 1P 800V 25A GBPC-W
      Сборник данных Сравнение
        Min.:1
        Mult.:1
        		 - - Screw, Through Hole Through Hole 4-Square, GBPC-W - 4 - 17.210003g SILICON - 1 -65°C~150°C TJ Tray - - e4 no Obsolete 1 (Unlimited) 4 Through Hole - Silver (Ag) - - UL RECOGNIZED, LOW POWER LOSS - - - - UPPER WIRE 260 - 25A 40 GBPC2508 4 - - - Single Single Phase 5μA @ 800V - 25A 1.1V @ 12.5A ISOLATED 25A 5μA 300A - - 1.1V - 1 5μA 800V 300A - - - - 560V 7.62mm 28.8mm 28.8mm No No SVHC ROHS3 Compliant -
        GBPC2508W
        GBPC2508W

        Diodes Incorporated
        RoHS :
        Инкапсуляция : -
        Есть складские запасы : -
        1 : -
        Diodes Incorporated GBPC3510W
        Mfr. Тип
        GBPC3510W
        Anlielectronics Тип

        		Diodes Incorporated
        RECT BRIDGE GPP 35A 1000V GBPCW
        Сборник данных Сравнение
          Min.:1
          Mult.:1
          		 - - Screw, Through Hole Through Hole 4-Square, GBPC-W - 4 - 17.210003g SILICON 1kV 1 -65°C~150°C TJ Tray 2017 - e4 no Obsolete 1 (Unlimited) 4 Through Hole - Silver (Ag) - - UL RECOGNIZED, LOW POWER LOSS - - - - UPPER WIRE 260 - - 40 GBPC3510 4 - - - Single Single Phase 5μA @ 1000V - - 1.1V @ 17.5A ISOLATED 35A - 400A - - 1.1V 35A 1 5μA 1kV 400A - - - - 700V 8mm 28.8mm 28.8mm No - ROHS3 Compliant Lead Free
          GBPC3510W
          GBPC3510W

          Diodes Incorporated
          RoHS :
          Инкапсуляция : -
          Есть складские запасы : -
          1 : -
          GeneSiC Semiconductor KBPC1510W
          Mfr. Тип
          KBPC1510W
          Anlielectronics Тип

          		GeneSiC Semiconductor
          BRIDGE RECT 1P 1KV 15A KBPC-W
          Сборник данных Сравнение
            Min.:1
            Mult.:1
            		 4 Weeks PRODUCTION (Last Updated: 5 months ago) Chassis Mount Chassis Mount 4-Square, KBPC-W - 4 KBPC-W - - - - -55°C~150°C TJ Bulk 2010 - - - Active 1 (Unlimited) - - - - - - - - - - - - - - - - - - - - - - - Single Phase 5μA @ 1000V - - 1.1V @ 7.5A - 15A - - - 15A - - - - - - - - 1kV - - - - - - - RoHS Compliant -
            KBPC1510W
            KBPC1510W

            GeneSiC Semiconductor
            RoHS :
            Инкапсуляция : -
            Есть складские запасы : -
            1 : -
            Micro Commercial Co GBU4J-BP
            Mfr. Тип
            GBU4J-BP
            Anlielectronics Тип

            		Micro Commercial Co
            BRIDGE RECT 1PHASE 600V 4A GBU
            Сборник данных Сравнение
              Min.:1
              Mult.:1
              		 12 Weeks - - Through Hole 4-SIP, GBU NO - - - SILICON - 4 -55°C~150°C TJ Tube 2008 - e3 yes Active 1 (Unlimited) 4 - EAR99 MATTE TIN - - UL RECOGNIZED 8541.10.00.80 - - - - - NOT SPECIFIED not_compliant - NOT SPECIFIED GBU4J 4 R-PSFM-T4 Not Qualified BRIDGE, 4 ELEMENTS - Single Phase 5μA @ 600V - - 1.1V @ 4A - - - - 4A 4A - - 1 - - - 150A - 600V 600V - - - - - - ROHS3 Compliant -
              GBU4J-BP
              GBU4J-BP

              Micro Commercial Co
              RoHS :
              Инкапсуляция : -
              Есть складские запасы : -
              1 : -
              ON Semiconductor GBPC12005W
              Mfr. Тип
              GBPC12005W
              Anlielectronics Тип

              		ON Semiconductor
              RECT BRIDGE GPP 12A 50V GBPC-W
              Сборник данных Сравнение
                Min.:1
                Mult.:1
                		 - - Through Hole Through Hole 4-Square, GBPC-W - 4 - - - - 1 -55°C~150°C TJ Tray - - - - Obsolete 1 (Unlimited) - - - - - - - - 180pF 50V - - - - - 12A - GBPC12005 - - - - - Single Phase 5μA @ 50V 83.3W 12A 1.1V @ 6A - - 5μA 300A - - 1.1V - - - - 300A - - - - - 11.23mm 29mm 29mm - - RoHS Compliant Lead Free
                GBPC12005W
                GBPC12005W

                ON Semiconductor
                RoHS :
                Инкапсуляция : -
                Есть складские запасы : -
                1 : -
                Diodes Incorporated DFBR030U3LP-13
                Mfr. Тип
                DFBR030U3LP-13
                Anlielectronics Тип

                		Diodes Incorporated
                BRIDGE RECT 1P 30V 3A DFN4040-8
                Сборник данных Сравнение
                  Min.:1
                  Mult.:1
                  		 16 Weeks - Surface Mount Surface Mount 8-UDFN Exposed Pad - - - - - - - -55°C~150°C TJ Tape & Reel (TR) 2015 SBR® e4 yes Last Time Buy 1 (Unlimited) - - EAR99 Nickel/Palladium/Gold (Ni/Pd/Au) - - - - - - - - - 260 - - 30 - - - - - - Single Phase 10μA @ 30V - - 370mV @ 1A - - - - - 3A - - - - - - - - 30V - - - - - - - ROHS3 Compliant -
                  DFBR030U3LP-13
                  DFBR030U3LP-13

                  Diodes Incorporated
                  RoHS :
                  Инкапсуляция : -
                  Есть складские запасы : -
                  1 : -
                  IXYS VUO160-18NO7
                  Mfr. Тип
                  VUO160-18NO7
                  Anlielectronics Тип

                  		IXYS
                  Diode Rectifier Bridge Single 1.8KV 175A 5-Pin PWS-E-1
                  Сборник данных Сравнение
                    Min.:1
                    Mult.:1
                    		 16 Weeks - Chassis Mount, Screw Chassis Mount PWS-E1 - 5 - - SILICON - 1 -40°C~150°C TJ Bulk 2012 - - yes Active 1 (Unlimited) 5 - - - - - UL RECOGNIZED - - - - UPPER UNSPECIFIED NOT SPECIFIED - - NOT SPECIFIED VUO160 5 - Not Qualified BRIDGE, 6 ELEMENTS - Three Phase 200μA @ 1800V 250W - 1.1V @ 60A ISOLATED - 2mA 1.8kA - - 1.65V 175A 3 - - 1.95kA - - 1.8kV - - 30mm 94mm 54mm - - ROHS3 Compliant Lead Free
                    VUO160-18NO7
                    VUO160-18NO7

                    IXYS
                    RoHS :
                    Инкапсуляция : -
                    Есть складские запасы : -
                    1 : -
                    IXYS VUO84-16NO7
                    Mfr. Тип
                    VUO84-16NO7
                    Anlielectronics Тип

                    		IXYS
                    Bridge Rectifiers Standard Rectifier Module BipolarBridge
                    Сборник данных Сравнение
                      Min.:1
                      Mult.:1
                      		 25 Weeks - Chassis Mount Chassis Mount PWS-D - - - - SILICON - 6 -40°C~150°C TJ Bulk 2004 - e3 yes Active 1 (Unlimited) 5 - - Tin (Sn) - with Nickel (Ni) barrier - - - 8541.10.00.80 - - - UPPER UNSPECIFIED NOT SPECIFIED - - NOT SPECIFIED - 5 R-XUFM-X5 Not Qualified BRIDGE, 6 ELEMENTS - Three Phase 100μA @ 1600V - - 1.08V @ 30A ISOLATED - - - 92A 90A - - 3 - - - 780A - 1.6kV - - - - - - - ROHS3 Compliant -
                      VUO84-16NO7
                      VUO84-16NO7

                      IXYS
                      RoHS :
                      Инкапсуляция : -
                      Есть складские запасы : -
                      1 : -
                      IXYS VUO25-16NO8
                      Mfr. Тип
                      VUO25-16NO8
                      Anlielectronics Тип

                      		IXYS
                      Diode Rectifier Bridge Single 1.6KV 25A 5-Pin FO-B-B
                      Сборник данных Сравнение
                        Min.:1
                        Mult.:1
                        		 - - Screw QC Terminal 5-Square, FO-B - 5 - - SILICON - 1 -40°C~150°C TJ Bulk 2010 - e4 yes Active 1 (Unlimited) 5 - - Gold (Au) - with Nickel (Ni) barrier - - UL RECOGNIZED - - - - UPPER SOLDER LUG NOT SPECIFIED - - NOT SPECIFIED VUO25 5 - Not Qualified - Single Three Phase 300μA @ 1600V 15W - 2.2V @ 150A ISOLATED 20A 1.5mA 380A - - 1.25V 25A 3 300μA 1.6kV 400A - 400A - - - 10mm 28.5mm 28.5mm - No SVHC ROHS3 Compliant Lead Free
                        VUO25-16NO8
                        VUO25-16NO8

                        IXYS
                        RoHS :
                        Инкапсуляция : -
                        Есть складские запасы : -
                        1 : -
                        Infineon Technologies DDB6U104N16RRPB37BPSA1
                        Mfr. Тип
                        DDB6U104N16RRPB37BPSA1
                        Anlielectronics Тип

                        		Infineon Technologies
                        BRIDGE RECT 3P 1.6KV 35A ECONO2
                        Сборник данных Сравнение
                          Min.:1
                          Mult.:1
                          		 16 Weeks - - Chassis Mount Module NO - - - SILICON - 6 -40°C~150°C TJ Tray 2006 EconoPACK™2 - - Active 1 (Unlimited) 19 - - - - - - - - - - UPPER UNSPECIFIED NOT SPECIFIED - - NOT SPECIFIED - - R-XUFM-X19 - BRIDGE, 6 ELEMENTS WITH BUILT-IN IGBT - Three Phase 5mA @ 1600V - - 2.15V @ 35A - - - - 105A 35A - - 3 - - - 650A - 1.6kV - - - - - - - ROHS3 Compliant -
                          DDB6U104N16RRPB37BPSA1
                          DDB6U104N16RRPB37BPSA1

                          Infineon Technologies
                          RoHS :
                          Инкапсуляция : -
                          Есть складские запасы : -
                          1 : -
                          Diodes Incorporated GBJ801
                          Mfr. Тип
                          GBJ801
                          Anlielectronics Тип

                          		Diodes Incorporated
                          RECT BRIDGE GPP 100V 8A GBJ
                          Сборник данных Сравнение
                            Min.:1
                            Mult.:1
                            		 - - Through Hole - - - 4 - - SILICON - 1 - Tube 2006 - e0 - Discontinued 1 (Unlimited) 4 - EAR99 - 150°C -65°C UL RECOGNIZED - 55pF 100V - SINGLE - 235 not_compliant 8A 10 - 4 - Not Qualified - - BRIDGE RECTIFIER DIODE - - 8A - ISOLATED - 5μA 170A - - 1V - 1 - - 170A - - - - - 24.5mm 30.3mm 4.8mm - No SVHC ROHS3 Compliant Contains Lead
                            GBJ801
                            GBJ801

                            Diodes Incorporated
                            RoHS :
                            Инкапсуляция : -
                            Есть складские запасы : -
                            1 : -
                            ON Semiconductor 3N255
                            Mfr. Тип
                            3N255
                            Anlielectronics Тип

                            		ON Semiconductor
                            BRIDGE RECT 1PHASE 200V 2A KBPM
                            Сборник данных Сравнение
                              Min.:1
                              Mult.:1
                              		 - - Through Hole Through Hole 4-SIP, KBPM - 4 - - SILICON - 1 -55°C~150°C TJ Tube - - e0 - Obsolete 1 (Unlimited) 4 - - Tin/Lead (Sn/Pb) - - - - 25pF 200V - - - NOT SPECIFIED unknown 2A NOT SPECIFIED 3N255 - - - - - Single Phase 5μA @ 200V 4.7W 2A 1.1V @ 3.14A - - 50μA 60A - - 1.1V 2A 1 5μA 200V 60A - - - - - 12.7mm 15.24mm 5.08mm - - RoHS Compliant Lead Free
                              3N255
                              3N255

                              ON Semiconductor
                              RoHS :
                              Инкапсуляция : -
                              Есть складские запасы : -
                              1 : -
                              GeneSiC Semiconductor KBP202G
                              Mfr. Тип
                              KBP202G
                              Anlielectronics Тип

                              		GeneSiC Semiconductor
                              BRIDGE RECT 1PHASE 100V 2A KBP
                              Сборник данных Сравнение
                                Min.:1
                                Mult.:1
                                		 4 Weeks PRODUCTION (Last Updated: 5 months ago) Through Hole Through Hole 4-SIP, KBP - 4 KBP - - - - -55°C~150°C TJ Bulk 2006 - - - Active 1 (Unlimited) - - - - - - - - - - - - - - - - - - - - - - - Single Phase 10μA @ 100V - - 1.1V @ 2A - - - - - 2A - - - - - - - - 100V - - - - - - - RoHS Compliant -
                                KBP202G
                                KBP202G

                                GeneSiC Semiconductor
                                RoHS :
                                Инкапсуляция : -
                                Есть складские запасы : -
                                1 : -
                                ON Semiconductor KBP02M
                                Mfr. Тип
                                KBP02M
                                Anlielectronics Тип

                                		ON Semiconductor
                                BRIDGE RECT 1P 200V 1.5A KBPM
                                Сборник данных Сравнение
                                  Min.:1
                                  Mult.:1
                                  		 - - Through Hole Through Hole 4-SIP, KBPM - 4 KBPM 1.518004g - - 1 -55°C~165°C TJ Tube - - - - Obsolete 1 (Unlimited) - Through Hole - - 150°C -55°C - - 15pF 200V 3.5W - - - - 1.5A - - - - - - Single Single Phase 5μA @ 200V 3.5W 1.5A 1V @ 1A - 1.5A 5μA 50A - 1.5A 1V 1.5A - 5μA 200V 50A - 50A 200V - - 12.7mm 15.2mm 5.08mm No No SVHC RoHS Compliant Lead Free
                                  KBP02M
                                  KBP02M

                                  ON Semiconductor
                                  RoHS :
                                  Инкапсуляция : -
                                  Есть складские запасы : -
                                  1 : -
                                  Micro Commercial Co SDB103-TP
                                  Mfr. Тип
                                  SDB103-TP
                                  Anlielectronics Тип

                                  		Micro Commercial Co
                                  BRIDGE RECT 1PHASE 200V 1A SDB-1
                                  Сборник данных Сравнение
                                    Min.:1
                                    Mult.:1
                                    		 14 Weeks - - Surface Mount 4-SMD, Gull Wing YES - - - SILICON - 4 -55°C~150°C Cut Tape (CT) 2008 - e3 yes Active 1 (Unlimited) 4 - EAR99 Matte Tin (Sn) - - UL RECOGNIZED 8541.10.00.80 - - - DUAL - NOT SPECIFIED not_compliant - NOT SPECIFIED - 4 R-PDSO-G4 Not Qualified BRIDGE, 4 ELEMENTS - Single Phase 10μA @ 200V - - 1.1V @ 1A - - - - 1A 1A - - 1 - - - 30A - 200V 200V - - - - - - ROHS3 Compliant -
                                    SDB103-TP
                                    SDB103-TP

                                    Micro Commercial Co
                                    RoHS :
                                    Инкапсуляция : -
                                    Есть складские запасы : -
                                    1 : -
                                    Diodes Incorporated DF005S
                                    Mfr. Тип
                                    DF005S
                                    Anlielectronics Тип

                                    		Diodes Incorporated
                                    BRIDGE RECT 1PHASE 50V 1A DF-S
                                    Сборник данных Сравнение
                                      Min.:1
                                      Mult.:1
                                      		 9 Weeks - Surface Mount Surface Mount 4-SMD, Gull Wing - 4 - 299.00242mg SILICON - 1 -65°C~150°C TJ Tube 2006 - e3 no Active 1 (Unlimited) 4 SMD/SMT EAR99 Matte Tin (Sn) - - UL RECOGNIZED - 25pF 50V - DUAL - 260 - 1A 40 DF005 4 - - - Single Single Phase 10μA @ 50V - 1A 1.1V @ 1A - - - 50A - - 1.1V - 1 10μA 50V 50A - - - - 35V 3.4mm 8.51mm 6.5mm No - ROHS3 Compliant Exempt
                                      DF005S
                                      DF005S

                                      Diodes Incorporated
                                      RoHS :
                                      Инкапсуляция : -
                                      Есть складские запасы : -
                                      1 : -
                                      Micro Commercial Co GBU4M-BP
                                      Mfr. Тип
                                      GBU4M-BP
                                      Anlielectronics Тип

                                      		Micro Commercial Co
                                      BRIDGE RECT 1PHASE 1KV 4A GBU
                                      Сборник данных Сравнение
                                        Min.:1
                                        Mult.:1
                                        		 12 Weeks - - Through Hole 4-SIP, GBU NO - - - SILICON - 4 -55°C~150°C TJ Tube 2005 - e3 yes Active 1 (Unlimited) 4 - EAR99 Matte Tin (Sn) - - UL RECOGNIZED 8541.10.00.80 - - - - - NOT SPECIFIED not_compliant - NOT SPECIFIED GBU4M 4 R-PSFM-T4 Not Qualified BRIDGE, 4 ELEMENTS - Single Phase 5μA @ 1000V - - 1V @ 2A - - - - 4A 4A - - 1 - - - 150A - 1kV 1000V - - - - - - ROHS3 Compliant -
                                        GBU4M-BP
                                        GBU4M-BP

                                        Micro Commercial Co
                                        RoHS :
                                        Инкапсуляция : -
                                        Есть складские запасы : -
                                        1 : -
                                        Diodes Incorporated GBU1004
                                        Mfr. Тип
                                        GBU1004
                                        Anlielectronics Тип

                                        		Diodes Incorporated
                                        BRIDGE RECT 1PHASE 400V 10A GBU
                                        Сборник данных Сравнение
                                          Min.:1
                                          Mult.:1
                                          		 9 Weeks - Through Hole Through Hole 4-SIP, GBU - 4 GBU 3.404012g - - 1 -55°C~150°C TJ Tube 2007 - - - Active 1 (Unlimited) - Through Hole - - 150°C -55°C - - - - - - - - - - - GBU1004 - - - - Single Single Phase 5μA @ 400V - - 1V @ 5A - 10A - 220A - 10A 1V - - 5μA 400V 220A - - 400V - 280V 18.8mm 22.3mm 3.56mm No - ROHS3 Compliant Lead Free
                                          GBU1004
                                          GBU1004

                                          Diodes Incorporated
                                          RoHS :
                                          Инкапсуляция : -
                                          Есть складские запасы : -
                                          1 : -

                                          Discrete Semiconductor Products

                                          Diodes - Bridge Rectifiers definition: A Bridge Rectifier provides full-wave rectification from a two-wire AC input, resulting in lower cost and weight as compared to a rectifier ... Diodes - Bridge Rectifiers Product Listing: VUO62-14NO7,KBU4K,GBPC2508W,GBPC3510W,KBPC1510W.Discrete Semiconductor Products type:Diodes - Zener - Single(113610),Diodes - Rectifiers - Single(97769),Transistors - FETs, MOSFETs - Single(61202),Transistors - Bipolar (BJT) - Single(34518),Diodes - Rectifiers - Arrays(17034) .Diodes - Bridge Rectifiers has 10000 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Anli.