Diodes - Bridge Rectifiers Products For Sale - PDF - Discrete Semiconductor Products -Page7

Изображение	Тип	Марка	Объяснение	Установленная цена	Количество	RoHS	Factory Lead Time	Lifecycle Status	Contact Plating	Mount	Mounting Type	Package / Case	Surface Mount	Number of Pins	Supplier Device Package	Weight	Diode Element Material	Number of Terminals	Brand	Breakdown Voltage / V	Factory Pack QuantityFactory Pack Quantity	Forward Voltage-Max (VF)	If - Forward Current	Ihs Manufacturer	Ir - Reverse Current	Manufacturer	Manufacturer Part Number	Maximum Operating Temperature	Mfr	Minimum Operating Temperature	Moisture Sensitive	Mounting Styles	Number of Elements	Operating Temperature-Max	Operating Temperature-Min	Package	Package Body Material	Package Description	Package Shape	Package Style	Part Life Cycle Code	Pd - Power Dissipation	Peak Reverse Voltage	Power Dissipation (Max)	Product Status	Reflow Temperature-Max (s)	Risk Rank	RoHS	Rohs Code	Unit Weight	Vr - Reverse Voltage	Operating Temperature	Packaging	Published	Series	JESD-609 Code	Pbfree Code	Part Status	Moisture Sensitivity Level (MSL)	Number of Terminations	Termination	ECCN Code	Type	Terminal Finish	Max Operating Temperature	Min Operating Temperature	Additional Feature	HTS Code	Capacitance	Subcategory	Voltage - Rated DC	Max Power Dissipation	Technology	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Reach Compliance Code	Current Rating	Time@Peak Reflow Temperature-Max (s)	Base Part Number	Pin Count	JESD-30 Code	Qualification Status	Configuration	Number of Channels	Leakage Current	Element Configuration	Diode Type	Current - Reverse Leakage @ Vr	Power Dissipation	Output Current	Voltage - Forward (Vf) (Max) @ If	Case Connection	Forward Current	Max Reverse Leakage Current	Max Surge Current	Output Current-Max	Current - Average Rectified (Io)	Forward Voltage	Average Rectified Current	Product Type	Number of Phases	Peak Reverse Current	Max Repetitive Reverse Voltage (Vrrm)	Rep Pk Reverse Voltage-Max	Peak Non-Repetitive Surge Current	Non-rep Pk Forward Current-Max	Max Forward Surge Current (Ifsm)	Voltage - Peak Reverse (Max)	Breakdown Voltage-Min	Reverse Voltage (DC)	Vf - Forward Voltage	Product Category	Height	Length	Width	Radiation Hardening	REACH SVHC	RoHS Status	Lead Free

Изображение	Тип	Марка	Объяснение	Количество	Factory Lead Time	Lifecycle Status	Contact Plating	Mount	Mounting Type	Package / Case	Surface Mount	Number of Pins	Supplier Device Package	Weight	Diode Element Material	Number of Terminals	Brand	Breakdown Voltage / V	Factory Pack QuantityFactory Pack Quantity	Forward Voltage-Max (VF)	If - Forward Current	Ihs Manufacturer	Ir - Reverse Current	Manufacturer	Manufacturer Part Number	Maximum Operating Temperature	Mfr	Minimum Operating Temperature	Moisture Sensitive	Mounting Styles	Number of Elements	Operating Temperature-Max	Operating Temperature-Min	Package	Package Body Material	Package Description	Package Shape	Package Style	Part Life Cycle Code	Pd - Power Dissipation	Peak Reverse Voltage	Power Dissipation (Max)	Product Status	Reflow Temperature-Max (s)	Risk Rank	RoHS	Rohs Code	Unit Weight	Vr - Reverse Voltage	Operating Temperature	Packaging	Published	Series	JESD-609 Code	Pbfree Code	Part Status	Moisture Sensitivity Level (MSL)	Number of Terminations	Termination	ECCN Code	Type	Terminal Finish	Max Operating Temperature	Min Operating Temperature	Additional Feature	HTS Code	Capacitance	Subcategory	Voltage - Rated DC	Max Power Dissipation	Technology	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Reach Compliance Code	Current Rating	Time@Peak Reflow Temperature-Max (s)	Base Part Number	Pin Count	JESD-30 Code	Qualification Status	Configuration	Number of Channels	Leakage Current	Element Configuration	Diode Type	Current - Reverse Leakage @ Vr	Power Dissipation	Output Current	Voltage - Forward (Vf) (Max) @ If	Case Connection	Forward Current	Max Reverse Leakage Current	Max Surge Current	Output Current-Max	Current - Average Rectified (Io)	Forward Voltage	Average Rectified Current	Product Type	Number of Phases	Peak Reverse Current	Max Repetitive Reverse Voltage (Vrrm)	Rep Pk Reverse Voltage-Max	Peak Non-Repetitive Surge Current	Non-rep Pk Forward Current-Max	Max Forward Surge Current (Ifsm)	Voltage - Peak Reverse (Max)	Breakdown Voltage-Min	Reverse Voltage (DC)	Vf - Forward Voltage	Product Category	Height	Length	Width	Radiation Hardening	REACH SVHC	RoHS Status	Lead Free
	Mfr. Тип GBPC1501 Anlielectronics Тип	ON Semiconductor	BRIDGE RECT 1PHASE 100V 15A GBPC Сборник данных Сравнение	Min.:1 Mult.:1	12 Weeks	ACTIVE (Last Updated: 1 week ago)	-	Screw	QC Terminal	4-Square, GBPC	-	4	GBPC	16.74g	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-55°C~150°C TJ	Bulk	-	-	-	-	Active	1 (Unlimited)	-	Screw	-	-	-	150°C	-55°C	-	-	180pF	-	100V	83.3W	-	-	-	-	-	15A	-	GBPC1501	-	-	-	-	-	-	Single	Single Phase	5μA @ 100V	83.3W	15A	1.1V @ 7.5A	-	15A	5μA	300A	-	15A	1.1V	-	-	-	5μA	100V	-	300A	-	300A	100V	-	-	-	-	11.23mm	29mm	29mm	No	No SVHC	ROHS3 Compliant	Lead Free
GBPC1501 ON Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GBPC3508W Anlielectronics Тип	ON Semiconductor	RECT BRIDGE GPP 35A 800V GBPC-W Сборник данных Сравнение	Min.:1 Mult.:1	12 Weeks	ACTIVE (Last Updated: 1 day ago)	-	Through Hole	Through Hole	4-Square, GBPC-W	-	4	GBPC-W	17.21g	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-55°C~150°C TJ	Tray	2017	-	-	-	Active	1 (Unlimited)	-	-	-	-	-	150°C	-55°C	-	-	180pF	-	800V	-	-	-	-	-	-	35A	-	GBPC3508	-	-	-	-	-	-	Single	Single Phase	5μA @ 800V	83.3W	35A	1.1V @ 17.5A	-	-	5μA	400A	-	35A	1.1V	35A	-	-	5μA	800V	-	400A	-	400A	800V	-	-	-	-	11.23mm	29mm	29mm	No	-	ROHS3 Compliant	Lead Free
GBPC3508W ON Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GBU608 Anlielectronics Тип	Diodes Incorporated	BRIDGE RECT 1PHASE 800V 6A GBU Сборник данных Сравнение	Min.:1 Mult.:1	9 Weeks	-	Tin	Through Hole	Through Hole	4-SIP, GBU	-	4	-	3.404012g	SILICON	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-55°C~150°C TJ	Tube	2006	-	e3	no	Active	1 (Unlimited)	4	Through Hole	-	-	-	-	-	UL RECOGNIZED	-	-	-	-	-	-	-	-	260	-	-	40	GBU608	4	-	-	-	-	-	Single	Single Phase	5μA @ 800V	-	-	1V @ 3A	ISOLATED	6A	-	175A	6A	-	1V	-	-	1	5μA	800V	-	175A	-	175A	-	-	560V	-	-	18.8mm	22.3mm	3.56mm	No	-	ROHS3 Compliant	-
GBU608 Diodes Incorporated RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GBJ601-F Anlielectronics Тип	Diodes Incorporated	BRIDGE RECT 1PHASE 100V 6A GBJ Сборник данных Сравнение	Min.:1 Mult.:1	9 Weeks	-	-	Through Hole	Through Hole	4-SIP, GBJ	-	4	-	-	SILICON	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-65°C~150°C TJ	Tube	2006	-	e3	no	Active	1 (Unlimited)	4	Through Hole	EAR99	-	Matte Tin (Sn)	-	-	UL RECOGNIZED	-	55pF	-	100V	-	-	-	-	-	-	6A	-	-	4	-	-	-	-	-	Single	Single Phase	5μA @ 100V	-	6A	1V @ 3A	ISOLATED	6A	-	170A	-	-	1V	-	-	1	5μA	100V	-	170A	-	-	-	-	70V	-	-	24.5mm	30.3mm	4.8mm	No	No SVHC	ROHS3 Compliant	Exempt
GBJ601-F Diodes Incorporated RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип KBJ606G Anlielectronics Тип	Diodes Incorporated	BRIDGE RECT 1PHASE 600V 6A KBJ Сборник данных Сравнение	Min.:1 Mult.:1	31 Weeks	-	-	Through Hole	Through Hole	4-SIP, KBJ	-	4	-	-	SILICON	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-65°C~150°C TJ	Tube	2006	-	e3	no	Active	1 (Unlimited)	4	Through Hole	-	-	Matte Tin (Sn)	-	-	UL RECOGNIZED	-	-	-	-	-	-	-	-	260	-	-	40	-	4	-	-	-	-	-	Single	Single Phase	5μA @ 600V	-	-	1V @ 3A	ISOLATED	6A	-	170A	6A	-	1V	6A	-	1	5μA	600V	-	170A	-	-	-	-	420V	-	-	19.3mm	25.2mm	9.7mm	No	-	ROHS3 Compliant	Lead Free
KBJ606G Diodes Incorporated RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GBJ1006 Anlielectronics Тип	Diodes Incorporated	BRIDGE RECT 1PHASE 600V 10A GBJ Сборник данных Сравнение	Min.:1 Mult.:1	-	-	-	Through Hole	Through Hole	4-SIP, GBJ	-	4	-	-	SILICON	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-65°C~150°C TJ	Tube	-	-	e0	-	Discontinued	1 (Unlimited)	4	Through Hole	-	-	-	-	-	UL RECOGNIZED	-	55pF	-	600V	-	-	-	-	235	not_compliant	10A	10	GBJ1006	4	-	Not Qualified	-	-	-	Single	Single Phase	10μA @ 600V	-	10A	1.05V @ 5A	ISOLATED	10A	-	170A	-	-	1.05V	-	-	1	10μA	600V	-	170A	-	170A	-	-	420V	-	-	24.5mm	30.3mm	4.8mm	-	No SVHC	Non-RoHS Compliant	Contains Lead
GBJ1006 Diodes Incorporated RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип 1N4436S Anlielectronics Тип	Microchip Technology	STD RECTIFIER Сборник данных Сравнение	Min.:1 Mult.:1	-	-	-	-	Chassis, Stud Mount	Stud	NO	-	-	-	SILICON	4	Microchip Technology	-	1	-	-	MICROSEMI CORP	-	Microchip	1N4436S	-	Microchip Technology	-	-	-	4	-	-	Bulk	METAL	O-MUPF-D4	ROUND	PRESS FIT	Active	-	-	-	Active	NOT SPECIFIED	5.48	-	No	-	-	-65°C ~ 160°C	-	-	-	e0	No	-	-	-	-	EAR99	-	TIN LEAD	-	-	LEAKAGE CURRENT IS NOT AT 25 DEG C	8541.10.00.80	-	Diodes & Rectifiers	-	-	-	UPPER	SOLDER LUG	NOT SPECIFIED	compliant	-	-	-	4	O-MUPF-D4	Not Qualified	BRIDGE, 4 ELEMENTS	-	-	-	Single Phase	10 μA @ 200 V	-	-	1.2 V @ 10 A	ISOLATED	-	-	-	10 A	10 A	-	-	Zener Diodes	1	-	-	200 V	-	100 A	-	200 V	-	-	-	Zener Diodes	-	-	-	-	-	-	-
1N4436S Microchip Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GBPC1208W Anlielectronics Тип	ON Semiconductor	RECT BRIDGE GPP 12A 800V GBPC-W Сборник данных Сравнение	Min.:1 Mult.:1	12 Weeks	ACTIVE (Last Updated: 1 week ago)	-	Through Hole	Through Hole	4-Square, GBPC-W	-	4	-	17.21g	SILICON	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-55°C~150°C TJ	Bulk	-	-	-	yes	Active	1 (Unlimited)	4	-	EAR99	-	-	-	-	UL RECOGNIZED	-	180pF	-	800V	-	-	UPPER	WIRE	-	-	12A	-	GBPC1208	-	-	-	-	-	-	Single	Single Phase	5μA @ 800V	83.3W	12A	1.1V @ 6A	ISOLATED	12A	5μA	300A	-	-	1.1V	-	-	1	5μA	800V	-	300A	-	300A	-	-	-	-	-	11.23mm	29mm	29mm	No	No SVHC	ROHS3 Compliant	Lead Free
GBPC1208W ON Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип 1N4437F Anlielectronics Тип	Microchip Technology	STD RECTIFIER Сборник данных Сравнение	Min.:1 Mult.:1	-	-	-	-	Chassis Mount	Press Fit	-	-	Press Fit	-	-	-	Microchip Technology	-	1	-	-	-	-	Microchip	-	-	Microchip Technology	-	-	-	-	-	-	Bulk	-	-	-	-	-	-	-	-	Active	-	-	-	-	-	-	-65°C ~ 160°C (TA)	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Diodes & Rectifiers	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Single Phase	10 μA @ 400 V	-	-	1.2 V @ 10 A	-	-	-	-	-	10 A	-	-	Zener Diodes	-	-	-	-	-	-	-	400 V	-	-	-	Zener Diodes	-	-	-	-	-	-	-
1N4437F Microchip Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип 469-1 Anlielectronics Тип	Microchip Technology	SINGLE PHASE BRIDGE Сборник данных Сравнение	Min.:1 Mult.:1	-	-	-	-	Chassis Mount	4-Square	-	-	-	-	-	-	Microchip Technology / Atmel	-	1	-	-	-	-	Microchip	-	-	Microchip Technology	-	-	-	-	-	-	Bulk	-	-	-	-	-	-	-	-	Active	-	-	-	-	-	-	-65°C ~ 150°C (TJ)	-	-	Military, MIL-PRF-19500/469	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Diodes & Rectifiers	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Single Phase	2 μA @ 200 V	-	-	1.35 V @ 15.7 A	-	-	-	-	-	10 A	-	-	Bridge Rectifiers	-	-	-	-	-	-	-	200 V	-	-	-	Bridge Rectifiers	-	-	-	-	-	-	-
469-1 Microchip Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GBU606 Anlielectronics Тип	Diodes Incorporated	BRIDGE RECT 1PHASE 600V 6A GBU Сборник данных Сравнение	Min.:1 Mult.:1	9 Weeks	-	-	Through Hole	Through Hole	4-SIP, GBU	-	4	-	3.404012g	SILICON	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-55°C~150°C TJ	Tube	2006	-	e3	no	Active	1 (Unlimited)	4	Through Hole	-	-	Matte Tin (Sn)	-	-	UL RECOGNIZED	-	-	-	-	-	-	-	-	260	-	-	40	GBU606	4	-	-	-	-	-	Single	Single Phase	5μA @ 600V	-	-	1V @ 3A	ISOLATED	6A	-	175A	6A	-	1V	6A	-	1	5μA	600V	-	175A	-	-	-	-	420V	-	-	18.8mm	22.3mm	3.56mm	No	-	ROHS3 Compliant	Lead Free
GBU606 Diodes Incorporated RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип B6S_R2_00001 Anlielectronics Тип	PANJIT International	35A 5uA@600V 1V@500mA 800mA 600V -55℃~ 150℃@(Tj) MDI Bridge Rectifiers ROHS Сборник данных Сравнение	Min.:1 Mult.:1	-	-	-	-	Surface Mount	MDI-4	YES	-	4-MDI	-	SILICON	4	Panjit	-	3000	1 V	0.5 A	PAN JIT INTERNATIONAL INC	5 uA	Panjit	B6S_R2_00001	+ 150 C	Panjit International Inc.	- 55 C	Yes	SMD/SMT	4	150 °C	-55 °C	Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;	PLASTIC/EPOXY	R-PDSO-G4	RECTANGULAR	SMALL OUTLINE	Active	1.4 W	600 V	1.4 W	Active	NOT SPECIFIED	5.51	Details	Yes	0.004473 oz	600 V	-55°C ~ 150°C (TJ)	MouseReel	-	B1S	-	Yes	-	-	-	-	EAR99	Single Phase Bridge	-	-	-	UL RECOGNIZED	8541.10.00.80	-	Diodes & Rectifiers	-	-	Si	DUAL	GULL WING	NOT SPECIFIED	not_compliant	-	-	-	-	R-PDSO-G4	-	BRIDGE, 4 ELEMENTS	-	-	-	Single Phase	5 µA @ 600 V	-	-	1 V @ 500 mA	-	-	-	35 A	0.8 A	800 mA	-	-	Bridge Rectifiers	1	-	-	600 V	-	30 A	-	600 V	600 V	-	1 V	Bridge Rectifiers	2.7 mm	4.9 mm	4.2 mm	-	-	-	-
B6S_R2_00001 PANJIT International RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GBJ806-F Anlielectronics Тип	Diodes Incorporated	BRIDGE RECT 1PHASE 600V 8A GBJ Сборник данных Сравнение	Min.:1 Mult.:1	9 Weeks	-	-	Through Hole	Through Hole	4-SIP, GBJ	-	4	-	-	SILICON	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-65°C~150°C TJ	Tube	2006	-	e3	no	Active	1 (Unlimited)	4	Through Hole	-	-	Matte Tin (Sn)	-	-	UL RECOGNIZED	-	55pF	-	600V	-	-	-	-	-	-	8A	-	-	4	-	-	-	-	-	Single	Single Phase	5μA @ 600V	-	8A	1V @ 4A	ISOLATED	8A	-	170A	-	-	1V	-	-	1	5μA	600V	-	170A	-	-	-	-	420V	-	-	24.5mm	30.3mm	4.8mm	No	No SVHC	ROHS3 Compliant	Lead Free
GBJ806-F Diodes Incorporated RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип L6210 Anlielectronics Тип	STMicroelectronics	IC DIODE BRDG SCHTTKY DUAL 16DIP Сборник данных Сравнение	Min.:1 Mult.:1	-	-	-	Through Hole	Through Hole	16-DIP (0.300, 7.62mm)	-	16	-	-	SILICON	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	8	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	70°C TA	Tube	-	-	e0	-	Obsolete	1 (Unlimited)	16	-	EAR99	-	Tin/Lead (Sn/Pb)	-	-	-	-	-	-	100V	-	-	-	-	-	-	2A	-	L6210	16	-	-	-	2	1mA	Dual	Single Phase	1mA @ 40V	-	2A	1.2V @ 1A	-	2A	-	-	-	-	-	-	-	1	-	50V	-	-	-	-	-	-	-	-	-	3.3mm	19.18mm	6.35mm	No	-	ROHS3 Compliant	Contains Lead
L6210 STMicroelectronics RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип KBP02G Anlielectronics Тип	Diodes Incorporated	BRIDGE RECT 1PHASE 200V 1.5A KBP Сборник данных Сравнение	Min.:1 Mult.:1	15 Weeks	-	-	Through Hole	Through Hole	4-SIP, KBP	-	4	-	-	SILICON	-	-	200V	-	-	-	-	-	-	-	-	-	-	-	-	1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-65°C~150°C TJ	Tube	2008	-	e3	no	Active	1 (Unlimited)	4	Through Hole	EAR99	-	Matte Tin (Sn)	-	-	UL RECOGNIZED	-	20pF	-	200V	-	-	-	-	260	-	1.5A	40	KBP02	4	-	-	-	-	-	Single	Single Phase	5μA @ 200V	-	1.5A	1.1V @ 1.5A	ISOLATED	1.5A	-	40A	-	-	1.1V	1.5A	-	1	5μA	200V	-	40A	-	-	-	-	140V	-	-	10.6mm	14.75mm	3.65mm	No	-	ROHS3 Compliant	Lead Free
KBP02G Diodes Incorporated RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип SBR05M60BLP-7 Anlielectronics Тип	Diodes Incorporated	RECTIFIER SBR 60V 500MA 4-DFN Сборник данных Сравнение	Min.:1 Mult.:1	16 Weeks	-	-	Surface Mount	Surface Mount	4-UDFN	-	4	-	-	SILICON	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	4	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-55°C~150°C TJ	Tape & Reel (TR)	2010	SBR®	e4	yes	Active	1 (Unlimited)	4	-	EAR99	-	Nickel/Palladium/Gold (Ni/Pd/Au)	-	-	LOW LEAKAGE CURRENT	-	-	-	-	-	-	DUAL	-	260	-	-	40	SBR05M60	4	-	-	-	-	-	Single	Single Phase	100μA @ 60V	-	-	490mV @ 500mA	-	500mA	-	-	0.5A	-	490mV	-	-	1	100μA	60V	-	8A	-	-	-	-	60V	-	-	580μm	3mm	3mm	No	-	ROHS3 Compliant	Lead Free
SBR05M60BLP-7 Diodes Incorporated RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип LMB10S-TP Anlielectronics Тип	Micro Commercial Co	BRIDGE RECT 1PHASE 1KV 1A LMBS-1 Сборник данных Сравнение	Min.:1 Mult.:1	12 Weeks	-	-	-	Surface Mount	4-SMD, Gull Wing	YES	-	-	-	SILICON	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	4	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-55°C~150°C TJ	Cut Tape (CT)	2005	-	e3	yes	Active	1 (Unlimited)	4	-	EAR99	-	Matte Tin (Sn)	-	-	-	8541.10.00.70	-	-	-	-	-	DUAL	-	NOT SPECIFIED	not_compliant	-	NOT SPECIFIED	LMB10	4	R-PDSO-G4	Not Qualified	BRIDGE, 4 ELEMENTS	-	-	-	Single Phase	5μA @ 1000V	-	-	950mV @ 400mA	-	-	-	-	0.8A	1A	-	-	-	1	-	-	-	-	30A	-	1kV	1000V	-	-	-	-	-	-	-	-	ROHS3 Compliant	-
LMB10S-TP Micro Commercial Co RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GBU802 Anlielectronics Тип	Diodes Incorporated	BRIDGE RECT 1PHASE 200V 8A GBU Сборник данных Сравнение	Min.:1 Mult.:1	9 Weeks	-	-	Through Hole	Through Hole	4-SIP, GBU	-	4	-	3.404012g	SILICON	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-55°C~150°C TJ	Tube	2006	-	e3	no	Active	1 (Unlimited)	4	Through Hole	EAR99	-	Matte Tin (Sn)	-	-	UL RECOGNIZED	-	130pF	-	200V	-	-	-	-	260	-	8A	40	GBU802	4	-	-	-	-	-	Single	Single Phase	5μA @ 200V	-	8A	1V @ 4A	ISOLATED	8A	-	200A	-	-	1V	-	-	1	5μA	200V	-	200A	-	-	-	-	140V	-	-	18.8mm	22.3mm	3.56mm	No	-	ROHS3 Compliant	Exempt
GBU802 Diodes Incorporated RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип 680-6E3 Anlielectronics Тип	Microchip Technology	BRIDGES Сборник данных Сравнение	Min.:1 Mult.:1	-	-	-	-	Chassis Mount	4-Square, NA	-	-	NA	-	-	-	Microchip Technology	-	1	-	-	-	-	Microchip	-	-	Microchip Technology	-	-	-	-	-	-	Bulk	-	-	-	-	-	-	-	-	Active	-	-	-	-	-	-	-65°C ~ 150°C (TJ)	-	-	Military, MIL-PRF-19500	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Discrete Semiconductor Modules	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Single Phase	2 μA @ 600 V	-	-	1.2 V @ 2 A	-	-	-	-	-	10 A	-	-	Discrete Semiconductor Modules	-	-	-	-	-	-	-	600 V	-	-	-	Microchip Technology	-	-	-	-	-	-	-
680-6E3 Microchip Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип KBJ604G Anlielectronics Тип	Diodes Incorporated	BRIDGE RECT 1PHASE 400V 6A KBJ Сборник данных Сравнение	Min.:1 Mult.:1	7 Weeks	-	-	Through Hole	Through Hole	4-SIP, KBJ	-	4	-	-	SILICON	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-65°C~150°C TJ	Tube	2009	-	e3	no	Active	1 (Unlimited)	4	Through Hole	-	-	Matte Tin (Sn)	-	-	UL RECOGNIZED	-	-	-	-	-	-	-	-	260	-	-	40	-	4	-	-	-	-	-	Single	Single Phase	5μA @ 400V	-	-	1V @ 3A	ISOLATED	6A	-	170A	6A	-	1V	-	-	1	5μA	400V	-	170A	-	-	-	-	280V	-	-	19.3mm	25.2mm	9.7mm	No	-	ROHS3 Compliant	-
KBJ604G Diodes Incorporated RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -

Discrete Semiconductor Products

Diodes - Bridge Rectifiers definition: A Bridge Rectifier provides full-wave rectification from a two-wire AC input, resulting in lower cost and weight as compared to a rectifier ... Diodes - Bridge Rectifiers Product Listing: GBPC1501,GBPC3508W,GBU608,GBJ601-F,KBJ606G.Discrete Semiconductor Products type:Diodes - Zener - Single(113610),Diodes - Rectifiers - Single(97769),Transistors - FETs, MOSFETs - Single(61202),Transistors - Bipolar (BJT) - Single(34518),Diodes - Rectifiers - Arrays(17034) .Diodes - Bridge Rectifiers has 10000 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Anli.

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