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Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Mounting Type | Package / Case | Supplier Device Package | Base Product Number | Brand | Factory Pack QuantityFactory Pack Quantity | If - Forward Current | Ifsm - Forward Surge Current | Ir - Reverse Current | Manufacturer | Maximum Operating Temperature | Mfr | Minimum Operating Temperature | Mounting Styles | Package | Pd - Power Dissipation | Product Status | Qualification | RoHS | Unit Weight | Vr - Reverse Voltage | Vrrm - Repetitive Reverse Voltage | Packaging | Series | Subcategory | Technology | Configuration | Speed | Diode Type | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Operating Temperature - Junction | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Product Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Product | Vf - Forward Voltage | Product Category |
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Mfr. ТипUJ3D06504TSAnlielectronics Тип | UnitedSiC |
DIODE SIL CARB 650V 4A TO220-2
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Through Hole | TO-220-2 | TO-220-2 | UJ3D06504 | UnitedSiC | 50 | 4 A | 29 A | 700 nA | UnitedSiC | + 175 C | UnitedSiC | - 55 C | Through Hole | Tube | 71.4 W | Active | AEC-Q101 | Details | - | 650 V | 650 V | Tube | Gen-III | Diodes & Rectifiers | SiC | Single | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 25 μA @ 650 V | 1.7 V @ 4 A | -55°C ~ 175°C | 650 V | 4A | Schottky Diodes & Rectifiers | 118pF @ 1V, 1MHz | 0 ns | Schottky Silicon Carbide Diodes | 1.5 V | Schottky Diodes & Rectifiers | |||
UJ3D06504TS | ||||||||||||||||||||||||||||||||||||||||||||||
Mfr. ТипUJ3D1220KSDAnlielectronics Тип | UnitedSiC |
DIODE SIL CARB 1.2KV 10A TO247-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Through Hole | TO-247-3 | TO-247-3 | UJ3D1220 | UnitedSiC | 30 | 20 A | 240 A | 200 uA | UnitedSiC | + 175 C | UnitedSiC | - 55 C | Through Hole | Tube | 468.8 W | Active | AEC-Q101 | Details | 0.521437 oz | 1200 V | 1.2 kV | Tube | - | Diodes & Rectifiers | SiC | Dual | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 220 μA @ 1200 V | 1.6 V @ 10 A | -55°C ~ 175°C | 1200 V | 10A | Schottky Diodes & Rectifiers | 1020pF @ 1V, 1MHz | 0 ns | Schottky Silicon Carbide Diodes | 1.4 V | Schottky Diodes & Rectifiers | |||
UJ3D1220KSD | ||||||||||||||||||||||||||||||||||||||||||||||
Mfr. ТипUJ3D06516TSAnlielectronics Тип | UnitedSiC |
DIODE SIL CARB 650V 16A TO220-2
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Through Hole | TO-220-2 | TO-220-2 | UJ3D06516 | UnitedSiC | 50 | 16 A | 100 A | 16 uA | UnitedSiC | + 175 C | UnitedSiC | - 55 C | Through Hole | Tube | 230.8 W | Active | AEC-Q101 | Details | - | 650 V | 650 V | Tube | Gen-III | Diodes & Rectifiers | SiC | Single | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 100 μA @ 650 V | 1.7 V @ 16 A | -55°C ~ 175°C | 650 V | 16A | Schottky Diodes & Rectifiers | 500pF @ 1V, 1MHz | 0 ns | Schottky Silicon Carbide Diodes | 1.5 V | Schottky Diodes & Rectifiers | |||
UJ3D06516TS | ||||||||||||||||||||||||||||||||||||||||||||||
Mfr. ТипUJ3D06530TSAnlielectronics Тип | UnitedSiC |
DIODE SIL CARB 650V 30A TO220-2
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Through Hole | TO-220-2 | TO-220-2 | UJ3D06530 | UnitedSiC | 50 | 30 A | 165 A | 30 uA | UnitedSiC | + 175 C | UnitedSiC | - 55 C | Through Hole | Tube | 288.5 W | Active | AEC-Q101 | Details | - | 650 V | 650 V | Tube | Gen-III | Diodes & Rectifiers | SiC | Single | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 370 μA @ 650 V | 1.7 V @ 30 A | -55°C ~ 175°C | 650 V | 30A | Schottky Diodes & Rectifiers | 990pF @ 1V, 1MHz | 0 ns | Schottky Silicon Carbide Diodes | 1.5 V | Schottky Diodes & Rectifiers | |||
UJ3D06530TS | ||||||||||||||||||||||||||||||||||||||||||||||
Mfr. ТипUJ3D1202TSAnlielectronics Тип | UnitedSiC |
DIODE SIL CARB 1.2KV 2A TO220-2
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Through Hole | TO-220-2 | TO-220-2 | UJ3D1202 | UnitedSiC | 50 | 2 A | 30 A | 20 uA | UnitedSiC | + 175 C | UnitedSiC | - 55 C | Through Hole | Tube | 75 W | Active | AEC-Q101 | Details | 0.117790 oz | 1200 V | 1.2 kV | Tube | - | Diodes & Rectifiers | SiC | Single | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 22 μA @ 1200 V | 1.6 V @ 5 A | -55°C ~ 175°C | 1200 V | 2A | Schottky Diodes & Rectifiers | 109pF @ 1V, 1MHz | 0 ns | Schottky Silicon Carbide Diodes | 1.4 V | Schottky Diodes & Rectifiers | |||
UJ3D1202TS | ||||||||||||||||||||||||||||||||||||||||||||||
Mfr. ТипUJ3D06510TSAnlielectronics Тип | UnitedSiC |
DIODE SIL CARB 650V 10A TO220-2
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Through Hole | TO-220-2 | TO-220-2 | UJ3D06510 | UnitedSiC | 50 | 10 A | 70 A | 10 uA | UnitedSiC | + 175 C | UnitedSiC | - 55 C | Through Hole | Tube | 136.4 W | Active | AEC-Q101 | Details | 0.224448 oz | 650 V | 650 V | Tube | Gen-III | Diodes & Rectifiers | SiC | Single | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 60 μA @ 650 V | 1.7 V @ 10 A | -55°C ~ 175°C | 650 V | 10A | Schottky Diodes & Rectifiers | 327pF @ 1V, 1MHz | 0 ns | Schottky Silicon Carbide Diodes | 1.5 V | Schottky Diodes & Rectifiers | |||
UJ3D06510TS | ||||||||||||||||||||||||||||||||||||||||||||||
Mfr. ТипUJ3D1210KSDAnlielectronics Тип | UnitedSiC |
DIODE SIL CARB 1.2KV 5A TO247-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Through Hole | TO-247-3 | TO-247-3 | UJ3D1210 | UnitedSiC | 30 | 10 A | 140 A | 80 uA | UnitedSiC | + 175 C | UnitedSiC | - 55 C | Through Hole | Tube | 272 W | Active | AEC-Q101 | Details | - | 1200 V | 1.2 kV | Tube | - | Diodes & Rectifiers | SiC | Dual | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 110 μA @ 1200 V | 1.6 V @ 5 A | -55°C ~ 175°C | 1200 V | 5A | Schottky Diodes & Rectifiers | 500pF @ 1V, 1MHz | 0 ns | Schottky Silicon Carbide Diodes | 1.4 V | Schottky Diodes & Rectifiers | |||
UJ3D1210KSD | ||||||||||||||||||||||||||||||||||||||||||||||
Mfr. ТипUJ3D1210TSAnlielectronics Тип | UnitedSiC |
DIODE SIL CARB 1.2KV 10A TO220-2
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Through Hole | TO-220-2 | TO-220-2 | UJ3D1210 | UnitedSiC | 50 | 10 A | 120 A | 100 uA | UnitedSiC | + 175 C | UnitedSiC | - 55 C | Through Hole | Tube | 220.6 W | Active | AEC-Q101 | Details | 0.137421 oz | 1200 V | 1.2 kV | Tube | - | Diodes & Rectifiers | SiC | Single | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 110 μA @ 1200 V | 1.6 V @ 10 A | -55°C ~ 175°C | 1200 V | 10A | Schottky Diodes & Rectifiers | 510pF @ 1V, 1MHz | 0 ns | Schottky Silicon Carbide Diodes | 1.4 V | Schottky Diodes & Rectifiers | |||
UJ3D1210TS | ||||||||||||||||||||||||||||||||||||||||||||||
Mfr. ТипUJ2D1215TAnlielectronics Тип | UnitedSiC |
Schottky Diodes & Rectifiers 1200V/15A SiC SCHOTTKY DIODE G2, TO-247, DUAL
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | TO-220-2 | - | - | - | 150 | 15 A | 120 A | 45 uA | - | + 175 C | - | - 55 C | Through Hole | - | 187 W | - | - | Details | 0.063493 oz | 1.2 kV | 1.2 kV | Tube | UJ2D | - | - | Single | - | - | - | - | - | - | - | - | - | - | Schottky Silicon Carbide Diodes | 1.5 V | - | |||
UJ2D1215T | ||||||||||||||||||||||||||||||||||||||||||||||
Mfr. ТипUJ3D06506TSAnlielectronics Тип | UnitedSiC |
DIODE SIL CARB 650V 6A TO220-2
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Through Hole | TO-220-2 | TO-220-2 | UJ3D06506 | UnitedSiC | 50 | 6 A | 45 A | 700 nA | UnitedSiC | + 175 C | UnitedSiC | - 55 C | Through Hole | Tube | 93.4 W | Active | AEC-Q101 | Details | - | 650 V | 650 V | Tube | Gen-III | Diodes & Rectifiers | SiC | Single | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 40 μA @ 650 V | 1.7 V @ 6 A | -55°C ~ 175°C | 650 V | 6A | Schottky Diodes & Rectifiers | 196pF @ 1V, 1MHz | 0 ns | Schottky Silicon Carbide Diodes | 1.5 V | Schottky Diodes & Rectifiers | |||
UJ3D06506TS | ||||||||||||||||||||||||||||||||||||||||||||||
Mfr. ТипUJ3D1210K2Anlielectronics Тип | UnitedSiC |
DIODE SIL CARB 1.2KV 10A TO247-2
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Through Hole | TO-247-2 | TO-247-2 | UJ3D1210 | UnitedSiC | 30 | 10 A | 120 A | 10 uA | UnitedSiC | + 175 C | UnitedSiC | - 55 C | Through Hole | Tube | 136.4 W | Active | AEC-Q101 | Details | - | 1200 V | 1.2 kV | Tube | - | Diodes & Rectifiers | SiC | Single | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 110 μA @ 1200 V | 1.6 V @ 10 A | -55°C ~ 175°C | 1200 V | 10A | Schottky Diodes & Rectifiers | 510pF @ 1V, 1MHz | 0 ns | Schottky Silicon Carbide Diodes | 1.4 V | Schottky Diodes & Rectifiers | |||
UJ3D1210K2 | ||||||||||||||||||||||||||||||||||||||||||||||
Mfr. ТипUJ3D06520TSAnlielectronics Тип | UnitedSiC |
DIODE SIL CARB 650V 20A TO220-2
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Through Hole | TO-220-2 | TO-220-2 | UJ3D06520 | UnitedSiC | 50 | 20 A | 126 A | 20 uA | UnitedSiC | + 175 C | UnitedSiC | - 55 C | Through Hole | Tube | 272.7 W | Active | AEC-Q101 | Details | - | 650 V | 650 V | Tube | Gen-III | Diodes & Rectifiers | SiC | Single | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 120 μA @ 650 V | 1.7 V @ 20 A | -55°C ~ 175°C | 650 V | 20A | Schottky Diodes & Rectifiers | 654pF @ 1V, 1MHz | 0 ns | Schottky Silicon Carbide Diodes | 1.5 V | Schottky Diodes & Rectifiers | |||
UJ3D06520TS | ||||||||||||||||||||||||||||||||||||||||||||||
Mfr. ТипUJ3D1725K2Anlielectronics Тип | UnitedSiC |
DIODE SIL CARB 1.7KV 25A TO247-2
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Through Hole | TO-247-2 | TO-247-2 | UJ3D1725 | UnitedSiC | 30 | 25 A | 180 A | 24 uA | UnitedSiC | + 175 C | UnitedSiC | - 55 C | Through Hole | Tube | 283 W | Active | AEC-Q101 | Details | - | 1700 V | 1.7 kV | Tube | Automotive, AEC-Q101 | Diodes & Rectifiers | SiC | Single | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 360 μA @ 1700 V | 1.7 V @ 25 A | -55°C ~ 175°C | 1700 V | 25A | Schottky Diodes & Rectifiers | 1500pF @ 1V, 1MHz | 0 ns | Schottky Silicon Carbide Diodes | 1.54 V | Schottky Diodes & Rectifiers | |||
UJ3D1725K2 | ||||||||||||||||||||||||||||||||||||||||||||||
Mfr. ТипUJ3D06508TSAnlielectronics Тип | UnitedSiC |
DIODE SIL CARB 650V 8A TO220-2
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Through Hole | TO-220-2 | TO-220-2 | UJ3D06508 | UnitedSiC | 50 | 8 A | 55 A | 8 uA | UnitedSiC | + 175 C | UnitedSiC | - 55 C | Through Hole | Tube | 115.4 W | Active | AEC-Q101 | Details | 0.132522 oz | 650 V | 650 V | Tube | Gen-III | Diodes & Rectifiers | SiC | Single | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 50 μA @ 650 V | 1.7 V @ 8 A | -55°C ~ 175°C | 650 V | 8A | Schottky Diodes & Rectifiers | 250pF @ 1V, 1MHz | 0 ns | Schottky Silicon Carbide Diodes | 1.5 V | Schottky Diodes & Rectifiers | |||
UJ3D06508TS | ||||||||||||||||||||||||||||||||||||||||||||||
Mfr. ТипUJ3D1250K2Anlielectronics Тип | UnitedSiC |
DIODE SIL CARB 1.2KV 50A TO247-2
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Through Hole | TO-247-2 | TO-247-2 | UJ3D1250 | UnitedSiC | 30 | 50 A | 275 A | 52 uA | UnitedSiC | + 175 C | UnitedSiC | - 55 C | Through Hole | Tube | 319 W | Active | AEC-Q101 | Details | - | 1200 V | 1.2 kV | Tube | - | Diodes & Rectifiers | SiC | Single | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 400 μA @ 1200 V | 1.7 V @ 50 A | -55°C ~ 175°C | 1200 V | 50A | Schottky Diodes & Rectifiers | 2.34nF @ 1V, 1MHz | 0 ns | Schottky Silicon Carbide Diodes | 1.5 V | Schottky Diodes & Rectifiers | |||
UJ3D1250K2 | ||||||||||||||||||||||||||||||||||||||||||||||
Mfr. ТипUJ3D1205TSAnlielectronics Тип | UnitedSiC |
DIODE SIL CARB 1.2KV 5A TO220-2
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Through Hole | TO-220-2 | TO-220-2 | UJ3D1205 | UnitedSiC | 50 | 5 A | 70 A | 40 uA | UnitedSiC | + 175 C | UnitedSiC | - 55 C | Through Hole | Tube | 136 W | Active | AEC-Q101 | Details | 0.162437 oz | 1200 V | 1.2 kV | Tube | - | Diodes & Rectifiers | SiC | Single | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 55 μA @ 1200 V | 1.6 V @ 5 A | -55°C ~ 175°C | 1200 V | 5A | Schottky Diodes & Rectifiers | 250pF @ 1V, 1MHz | 0 ns | Schottky Silicon Carbide Diodes | 1.4 V | Schottky Diodes & Rectifiers | |||
UJ3D1205TS | ||||||||||||||||||||||||||||||||||||||||||||||
Mfr. ТипUJ3D06560KSDAnlielectronics Тип | UnitedSiC |
DIODE SIL CARB 650V 30A TO247-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Through Hole | TO-247-3 | TO-247-3 | UJ3D06560 | UnitedSiC | 30 | 60 A | 330 A | 60 uA | UnitedSiC | + 175 C | UnitedSiC | - 55 C | Through Hole | Tube | 577 W | Active | AEC-Q101 | Details | 0.373669 oz | 650 V | 650 V | Tube | - | Diodes & Rectifiers | SiC | Dual | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 740 μA @ 650 V | 1.7 V @ 30 A | -55°C ~ 175°C | 650 V | 30A | Schottky Diodes & Rectifiers | 1980pF @ 1V, 1MHz | 0 ns | Schottky Silicon Carbide Diodes | 1.5 V | Schottky Diodes & Rectifiers | |||
UJ3D06560KSD | ||||||||||||||||||||||||||||||||||||||||||||||
Mfr. ТипUJ3D06520KSDAnlielectronics Тип | UnitedSiC |
DIODE SIL CARB 650V 10A TO247-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Through Hole | TO-247-3 | TO-247-3 | UJ3D06520 | UnitedSiC | 30 | 20 A | 140 A | 20 uA | UnitedSiC | + 175 C | UnitedSiC | - 55 C | Through Hole | Tube | 272.8 W | Active | AEC-Q101 | Details | - | 650 V | 650 V | Tube | Gen-III | Diodes & Rectifiers | SiC | Dual | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 120 μA @ 650 V | 1.7 V @ 10 A | -55°C ~ 175°C | 650 V | 10A | Schottky Diodes & Rectifiers | 654pF @ 1V, 1MHz | 0 ns | Schottky Silicon Carbide Diodes | 1.5 V | Schottky Diodes & Rectifiers | |||
UJ3D06520KSD | ||||||||||||||||||||||||||||||||||||||||||||||
Mfr. ТипUJ3D1250KAnlielectronics Тип | UnitedSiC |
DIODE SIL CARB 1.2KV 50A TO247-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Through Hole | TO-247-3 | TO-247-3 | UJ3D1250 | UnitedSiC | 30 | 50 A | 275 A | 500 uA | UnitedSiC | + 175 C | UnitedSiC | - 55 C | Through Hole | Tube | 319 W | Active | AEC-Q101 | Details | - | 1200 V | 1.2 kV | Tube | - | Diodes & Rectifiers | SiC | Single | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 400 μA @ 1200 V | 1.7 V @ 50 A | -55°C ~ 175°C | 1200 V | 50A | Schottky Diodes & Rectifiers | 2340pF @ 1V, 1MHz | 0 ns | Schottky Silicon Carbide Diodes | 1.5 V | Schottky Diodes & Rectifiers | |||
UJ3D1250K | ||||||||||||||||||||||||||||||||||||||||||||||
Mfr. ТипUJ3D06512TSAnlielectronics Тип | UnitedSiC |
DIODE SIL CARB 650V 12A TO220-2
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Through Hole | TO-220-2 | TO-220-2 | UJ3D06512 | UnitedSiC | 50 | 12 A | 70 A | 80 uA | UnitedSiC | + 175 C | UnitedSiC | - 55 C | Through Hole | Tube | 187.5 W | Active | AEC-Q101 | Details | - | 650 V | 650 V | Tube | - | Diodes & Rectifiers | SiC | Single | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 80 μA @ 650 V | 1.7 V @ 12 A | -55°C ~ 175°C | 650 V | 12A | Schottky Diodes & Rectifiers | 392pF @ 1V, 1MHz | 0 ns | Schottky Silicon Carbide Diodes | 1.5 V | Schottky Diodes & Rectifiers | |||
UJ3D06512TS |
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