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- Transistors - Bipolar (BJT) - Single
| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Surface Mount | Number of Terminals | Transistor Element Material | Ihs Manufacturer | Manufacturer Part Number | Moisture Sensitivity Levels | Number of Elements | Operating Temperature-Max | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Reflow Temperature-Max (s) | Risk Rank | Rohs Code | Transition Frequency-Nom (fT) | JESD-609 Code | Pbfree Code | ECCN Code | Terminal Finish | HTS Code | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Qualification Status | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | JEDEC-95 Code | Power Dissipation-Max (Abs) | Collector Current-Max (IC) | DC Current Gain-Min (hFE) | Collector-Emitter Voltage-Max | Highest Frequency Band |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr. ТипSGA8343ZSRAnlielectronics Тип | RF Micro Devices Inc |
RF Small Signal Bipolar Transistor, 0.072A I(C), 1-Element, C Band, Silicon Germanium, NPN, GREEN, PLASTIC PACKAGE-4
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 4 | SILICON GERMANIUM | RF MICRO DEVICES INC | - | 1 | 1 | - | PLASTIC/EPOXY | GREEN, PLASTIC PACKAGE-4 | RECTANGULAR | SMALL OUTLINE | Transferred | - | - | Yes | - | e3 | - | 5A991.G | MATTE TIN | 8542.33.00.01 | DUAL | GULL WING | 260 | unknown | 30 | 4 | R-PDSO-G4 | Not Qualified | SINGLE | - | SWITCHING | NPN | - | 0.35 W | 0.072 A | 120 | 5 V | C BAND | ||
| SGA8343ZSR | ||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Тип2N1613Anlielectronics Тип | RFMD |
Small Signal Bipolar Transistor, 1A I(C), 1-Element, NPN, Silicon, TO-39
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | MICROSEMI CORP | 2N1613 | - | 1 | 200 °C | METAL | CYLINDRICAL, O-MBCY-W3 | ROUND | CYLINDRICAL | Active | NOT SPECIFIED | 5.08 | No | 60 MHz | e0 | No | EAR99 | Tin/Lead (Sn/Pb) | 8541.21.00.95 | BOTTOM | WIRE | NOT SPECIFIED | not_compliant | - | - | O-MBCY-W3 | Not Qualified | SINGLE | COLLECTOR | - | NPN | TO-205AD | 0.8 W | 0.5 A | 20 | 30 V | - | ||
| 2N1613 | ||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSGA8543ZAnlielectronics Тип | RF Micro Devices Inc |
Description: S BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR, GREEN PACKAGE-4
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 4 | SILICON GERMANIUM | RF MICRO DEVICES INC | - | - | 1 | - | PLASTIC/EPOXY | SMALL OUTLINE, R-PDSO-G4 | RECTANGULAR | SMALL OUTLINE | Obsolete | - | - | Yes | - | e3 | - | 5A991.G | Matte Tin (Sn) | - | DUAL | GULL WING | - | compliant | - | 4 | R-PDSO-G4 | - | SINGLE | - | SWITCHING | NPN | - | - | 0.105 A | 120 | 4.5 V | S BAND | ||
| SGA8543Z | ||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSGA9289ZSRAnlielectronics Тип | RF Micro Devices Inc |
RF Small Signal Bipolar Transistor, 0.4A I(C), 1-Element, Silicon Germanium, NPN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | - | SILICON GERMANIUM | RF MICRO DEVICES INC | - | - | 1 | - | - | , | - | - | Obsolete | - | - | Yes | - | - | - | 5A991.G | - | 8542.33.00.01 | - | - | - | unknown | - | - | - | - | - | - | - | NPN | - | - | 0.4 A | 100 | - | L BAND | ||
| SGA9289ZSR |
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