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| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Surface Mount | Number of Terminals | Transistor Element Material | Ihs Manufacturer | Number of Elements | Operating Temperature-Max | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Rohs Code | Transition Frequency-Nom (fT) | JESD-609 Code | ECCN Code | Terminal Finish | Terminal Position | Terminal Form | Reach Compliance Code | Pin Count | Reference Standard | JESD-30 Code | Qualification Status | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | JEDEC-95 Code | Power Dissipation-Max (Abs) | Collector Current-Max (IC) | DC Current Gain-Min (hFE) | Collector-Emitter Voltage-Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | Mfr. ТипMJ900Anlielectronics Тип | Silicon Transistor Corporation |
Power Bipolar Transistor, 8A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 2 | SILICON | SILICON TRANSISTOR CORP | 1 | 200 °C | METAL | TO-3, 2 PIN | ROUND | FLANGE MOUNT | Obsolete | TO-204AA | No | - | e0 | EAR99 | Tin/Lead (Sn/Pb) | BOTTOM | PIN/PEG | unknown | 2 | - | O-MBFM-P2 | Not Qualified | DARLINGTON | - | - | PNP | TO-3 | 90 W | 8 A | 750 | 60 V | ||
| MJ900 | |||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Тип2N1015Anlielectronics Тип | Silicon Transistor Corporation |
Power Bipolar Transistor, 7.5A I(C), NPN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | - | - | SILICON TRANSISTOR CORP | 1 | 150 °C | - | , | - | - | Obsolete | - | - | 0.02 MHz | - | EAR99 | - | - | - | unknown | - | - | - | - | SINGLE | - | - | NPN | - | 150 W | 7.5 A | 10 | - | ||
| 2N1015 | |||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Тип2N6359Anlielectronics Тип | Silicon Transistor Corporation |
Power Bipolar Transistor, 16A I(C), NPN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | - | - | SILICON TRANSISTOR CORP | 1 | 200 °C | - | , | - | - | Obsolete | - | No | 0.2 MHz | e0 | EAR99 | Tin/Lead (Sn/Pb) | - | - | unknown | - | - | - | - | SINGLE | - | - | NPN | - | 150 W | 16 A | 15 | - | ||
| 2N6359 | |||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипJAN2N1048AAnlielectronics Тип | Silicon Transistor Corporation |
Small Signal Bipolar Transistor, 0.5A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-57, TO-57, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | SILICON TRANSISTOR CORP | 1 | 200 °C | METAL | CYLINDRICAL, O-MBCY-X3 | ROUND | CYLINDRICAL | Obsolete | TO-57 | - | 0.075 MHz | - | EAR99 | - | BOTTOM | UNSPECIFIED | unknown | 3 | MIL-19500/176B | O-MBCY-X3 | Not Qualified | SINGLE | COLLECTOR | - | NPN | TO-57 | 1 W | 0.5 A | 12 | 120 V | ||
| JAN2N1048A | |||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Тип2N3235Anlielectronics Тип | Silicon Transistor Corporation |
Power Bipolar Transistor, 15A I(C), 55V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 2 | SILICON | SILICON TRANSISTOR CORP | 1 | 175 °C | METAL | TO-3, 2 PIN | ROUND | FLANGE MOUNT | Obsolete | TO-204AA | No | 1 MHz | e0 | EAR99 | TIN LEAD | BOTTOM | PIN/PEG | unknown | 2 | - | O-MBFM-P2 | Not Qualified | SINGLE | - | SWITCHING | NPN | TO-3 | 117 W | 15 A | 20 | 55 V | ||
| 2N3235 | |||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Тип2N1117Anlielectronics Тип | Silicon Transistor Corporation |
Power Bipolar Transistor, 0.8A I(C), NPN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | - | - | SILICON TRANSISTOR CORP | 1 | 200 °C | - | , | - | - | Obsolete | - | No | - | e0 | EAR99 | Tin/Lead (Sn/Pb) | - | - | unknown | - | - | - | - | SINGLE | - | - | NPN | - | 0.6 W | 0.8 A | 40 | - | ||
| 2N1117 | |||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипJAN2N2559Anlielectronics Тип | Silicon Transistor Corporation |
-
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| JAN2N2559 | |||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Тип2N2753Anlielectronics Тип | Silicon Transistor Corporation |
Power Bipolar Transistor, 20A I(C), NPN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | - | - | SILICON TRANSISTOR CORP | 1 | 175 °C | - | , | - | - | Obsolete | - | - | - | - | EAR99 | - | - | - | unknown | - | - | - | - | SINGLE | - | - | NPN | - | 200 W | 20 A | 10 | - | ||
| 2N2753 |
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