- Все продукты
- /
- Discrete Semiconductor Products
- /
- Transistors - Bipolar (BJT) - Single
| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Surface Mount | Number of Terminals | Transistor Element Material | Ihs Manufacturer | Number of Elements | Operating Temperature-Max | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Transition Frequency-Nom (fT) | ECCN Code | HTS Code | Terminal Position | Terminal Form | Reach Compliance Code | Pin Count | Reference Standard | JESD-30 Code | Qualification Status | Configuration | Case Connection | Polarity/Channel Type | JEDEC-95 Code | Power Dissipation-Max (Abs) | Collector Current-Max (IC) | DC Current Gain-Min (hFE) | Collector-Emitter Voltage-Max | VCEsat-Max | Power Dissipation Ambient-Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | Mfr. Тип2N6359Anlielectronics Тип | Spectrum Control |
Power Bipolar Transistor, 30A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 2 | SILICON | API TECHNOLOGIES CORP | 1 | 200 °C | METAL | FLANGE MOUNT, O-MBFM-P2 | ROUND | FLANGE MOUNT | Obsolete | - | 10 MHz | EAR99 | - | BOTTOM | PIN/PEG | compliant | - | - | O-MBFM-P2 | Not Qualified | SINGLE | COLLECTOR | NPN | TO-3 | 150 W | 30 A | 15 | 80 V | 1.4 V | - | ||
| 2N6359 | ||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Тип2N1117Anlielectronics Тип | Spectrum Control |
Small Signal Bipolar Transistor, 0.8A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-5,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | API TECHNOLOGIES CORP | 1 | 200 °C | METAL | CYLINDRICAL, O-MBCY-W3 | ROUND | CYLINDRICAL | Active | - | - | EAR99 | 8541.21.00.95 | BOTTOM | WIRE | compliant | - | - | O-MBCY-W3 | Not Qualified | SINGLE | - | NPN | TO-5 | 0.6 W | 0.8 A | 40 | 60 V | 4 V | 0.6 W | ||
| 2N1117 | ||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипJAN2N1048AAnlielectronics Тип | Spectrum Control |
Small Signal Bipolar Transistor, 0.5A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-57, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 4 | SILICON | API TECHNOLOGIES CORP | 1 | - | UNSPECIFIED | POST/STUD MOUNT, O-MBPM-W3 | ROUND | SPECIAL SHAPE | Active | TO-57 | - | EAR99 | - | BOTTOM | UNSPECIFIED | compliant | 3 | MIL-19500 | O-XBSS-X4 | Not Qualified | SINGLE | - | NPN | TO-57 | 40 W | 0.5 A | 12 | 120 V | 7.5 V | - | ||
| JAN2N1048A | ||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Тип2N1691Anlielectronics Тип | Spectrum Control |
Power Bipolar Transistor, 0.5A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, Metal, 3 Pin, TO-57, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | API TECHNOLOGIES CORP | 1 | 200 °C | METAL | TO-57, 3 PIN | ROUND | POST/STUD MOUNT | Active | TO-57 | 0.09 MHz | EAR99 | 8541.29.00.95 | BOTTOM | WIRE | compliant | 3 | - | O-MBPM-W3 | Not Qualified | SINGLE | - | NPN | - | 1 W | 0.5 A | 20 | 120 V | 7.5 V | 40 W | ||
| 2N1691 | ||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Тип2N3023Anlielectronics Тип | Spectrum Control |
Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-3, Metal, 2 Pin,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 2 | SILICON | API TECHNOLOGIES CORP | 1 | 175 °C | METAL | - | ROUND | FLANGE MOUNT | Active | - | 60 MHz | EAR99 | - | BOTTOM | PIN/PEG | compliant | - | - | O-MBFM-P2 | Not Qualified | SINGLE | COLLECTOR | PNP | TO-3 | 25 W | 5 A | 20 | 60 V | 1.5 V | - | ||
| 2N3023 | ||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипAP1089Anlielectronics Тип | Spectrum Control |
Power Bipolar Transistor, 3A I(C), PNP,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | - | - | API TECHNOLOGIES CORP | 1 | - | - | - | - | - | Active | - | 4 MHz | EAR99 | - | - | - | compliant | - | - | - | - | SINGLE | - | PNP | - | - | 3 A | 20 | - | - | - | ||
| AP1089 | ||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Тип2N1721Anlielectronics Тип | Spectrum Control |
Power Bipolar Transistor, 0.75A I(C), 1-Element, NPN, Silicon, TO-5, Metal, 3 Pin,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | API TECHNOLOGIES CORP | 1 | 175 °C | METAL | - | ROUND | CYLINDRICAL | Active | - | 16 MHz | EAR99 | - | BOTTOM | WIRE | compliant | - | - | O-MBCY-W3 | Not Qualified | SINGLE | COLLECTOR | NPN | TO-5 | 2 W | 0.75 A | 40 | - | - | - | ||
| 2N1721 | ||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Тип2N1015Anlielectronics Тип | Spectrum Control |
Description: Power Bipolar Transistor, 7.5A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, Metal, 2 Pin, TO-82, 2 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 2 | SILICON | API TECHNOLOGIES CORP | 1 | 150 °C | METAL | TO-82, 2 PIN | ROUND | POST/STUD MOUNT | Active | TO-82 | 0.02 MHz | EAR99 | 8541.29.00.95 | BOTTOM | SOLDER LUG | compliant | 2 | - | O-MBPM-D2 | Not Qualified | SINGLE | COLLECTOR | NPN | - | 150 W | 7.5 A | 10 | 30 V | 1.5 V | 150 W | ||
| 2N1015 | ||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Тип2N389AAnlielectronics Тип | Spectrum Control |
Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Metal, 3 Pin, TO-53, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | API TECHNOLOGIES CORP | 1 | 200 °C | METAL | FLANGE MOUNT, O-MBFM-X3 | ROUND | FLANGE MOUNT | Obsolete | TO-53 | - | EAR99 | 8541.29.00.95 | BOTTOM | UNSPECIFIED | compliant | 3 | - | O-MBFM-X3 | Not Qualified | SINGLE | - | NPN | - | - | 3 A | 12 | 60 V | 0.75 V | 85 W | ||
| 2N389A | ||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипJANTX2N5241Anlielectronics Тип | Spectrum Control |
Power Bipolar Transistor, 5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 2 | SILICON | API TECHNOLOGIES CORP | 1 | - | METAL | - | ROUND | FLANGE MOUNT | Active | - | 4 MHz | EAR99 | 8541.29.00.95 | BOTTOM | PIN/PEG | compliant | - | MIL | O-MBFM-P2 | Not Qualified | SINGLE | - | NPN | TO-3 | - | 5 A | 15 | 400 V | 0.7 V | 125 W | ||
| JANTX2N5241 | ||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Тип2N1506AAnlielectronics Тип | Spectrum Control |
Small Signal Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-5,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | API TECHNOLOGIES CORP | 1 | 200 °C | METAL | CYLINDRICAL, O-MBCY-W3 | ROUND | CYLINDRICAL | Active | - | 80 MHz | EAR99 | - | BOTTOM | WIRE | compliant | - | - | O-MBCY-W3 | Not Qualified | SINGLE | COLLECTOR | NPN | TO-5 | 0.8 W | 2 A | 10 | 80 V | 0.6 V | - | ||
| 2N1506A | ||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Тип2N2753Anlielectronics Тип | Spectrum Control |
Description: Power Bipolar Transistor, 20A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, Metal, 2 Pin, TO-82, 2 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 2 | SILICON | API TECHNOLOGIES CORP | 1 | 175 °C | METAL | TO-82, 2 PIN | ROUND | POST/STUD MOUNT | Active | TO-82 | - | EAR99 | 8541.29.00.95 | BOTTOM | SOLDER LUG | compliant | 2 | - | O-MBPM-D2 | Not Qualified | SINGLE | COLLECTOR | NPN | - | 200 W | 20 A | 10 | 150 V | 1.5 V | 200 W | ||
| 2N2753 | ||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Тип2N3235Anlielectronics Тип | Spectrum Control |
Description: Power Bipolar Transistor, 15A I(C), 55V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 2 | SILICON | SPECTRUM CONTROL INC | 1 | 175 °C | METAL | TO-3, 2 PIN | ROUND | FLANGE MOUNT | Active | TO-204AA | 0.8 MHz | EAR99 | - | BOTTOM | PIN/PEG | compliant | 2 | - | O-MBFM-P2 | Not Qualified | SINGLE | COLLECTOR | NPN | TO-3 | 117 W | 15 A | 20 | 55 V | - | - | ||
| 2N3235 |
Индекс :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ

