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- Transistors - Bipolar (BJT) - Single
| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Surface Mount | Number of Terminals | Transistor Element Material | Ihs Manufacturer | Number of Elements | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Rohs Code | ECCN Code | Additional Feature | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | JESD-30 Code | Qualification Status | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Collector Current-Max (IC) | DC Current Gain-Min (hFE) | Collector-Emitter Voltage-Max | Highest Frequency Band | Collector-Base Capacitance-Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr. ТипPTB20046Anlielectronics Тип | Ericsson |
RF Power Bipolar Transistor, L Band, Silicon, NPN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 6 | SILICON | ERICSSON POWER MODULES AB | - | CERAMIC, METAL-SEALED COFIRED | FLANGE MOUNT, R-CDFM-F6 | RECTANGULAR | FLANGE MOUNT | Transferred | No | EAR99 | HIGH RELIABILITY | DUAL | FLAT | NOT SPECIFIED | unknown | NOT SPECIFIED | R-CDFM-F6 | Not Qualified | - | EMITTER | AMPLIFIER | NPN | 0.7 A | - | - | L BAND | - | ||
| PTB20046 | |||||||||||||||||||||||||||||||||||
| | Mfr. ТипPTB20189Anlielectronics Тип | Ericsson |
Description: RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 4 | SILICON | ERICSSON POWER MODULES AB | 1 | CERAMIC, METAL-SEALED COFIRED | SMALL OUTLINE, R-CDSO-N4 | RECTANGULAR | SMALL OUTLINE | Obsolete | - | EAR99 | HIGH RELIABILITY | DUAL | NO LEAD | - | unknown | - | R-CDSO-N4 | Not Qualified | SINGLE | - | AMPLIFIER | NPN | 0.5 A | 20 | 28 V | ULTRA HIGH FREQUENCY BAND | - | ||
| PTB20189 | |||||||||||||||||||||||||||||||||||
| | Mfr. ТипPTB20166Anlielectronics Тип | Ericsson |
RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 2 | SILICON | ERICSSON POWER MODULES AB | 1 | CERAMIC, METAL-SEALED COFIRED | FLANGE MOUNT, R-CDFM-F2 | RECTANGULAR | FLANGE MOUNT | Obsolete | - | EAR99 | HIGH RELIABILITY | DUAL | FLAT | - | unknown | - | R-CDFM-F2 | Not Qualified | SINGLE | BASE | AMPLIFIER | NPN | 4 A | 30 | - | ULTRA HIGH FREQUENCY BAND | - | ||
| PTB20166 | |||||||||||||||||||||||||||||||||||
| | Mfr. ТипPTB20216Anlielectronics Тип | Ericsson |
RF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 3 | SILICON | ERICSSON POWER MODULES AB | 1 | CERAMIC, METAL-SEALED COFIRED | CHIP CARRIER, R-CQCC-N3 | RECTANGULAR | CHIP CARRIER | Transferred | No | EAR99 | HIGH RELIABILITY | QUAD | NO LEAD | NOT SPECIFIED | unknown | NOT SPECIFIED | R-CQCC-N3 | Not Qualified | SINGLE | - | AMPLIFIER | NPN | 1 A | - | 20 V | L BAND | - | ||
| PTB20216 | |||||||||||||||||||||||||||||||||||
| | Mfr. ТипPTB20135Anlielectronics Тип | Ericsson |
RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 2 | SILICON | ERICSSON POWER MODULES AB | 1 | CERAMIC, METAL-SEALED COFIRED | FLANGE MOUNT, R-CDFM-F2 | RECTANGULAR | FLANGE MOUNT | Obsolete | - | EAR99 | HIGH RELIABILITY | DUAL | FLAT | - | unknown | - | R-CDFM-F2 | Not Qualified | SINGLE | EMITTER | AMPLIFIER | NPN | 20 A | 20 | 25 V | ULTRA HIGH FREQUENCY BAND | - | ||
| PTB20135 | |||||||||||||||||||||||||||||||||||
| | Mfr. ТипPTB20155Anlielectronics Тип | Ericsson |
RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 2 | SILICON | ERICSSON POWER MODULES AB | 1 | CERAMIC, METAL-SEALED COFIRED | FLANGE MOUNT, R-CDFM-F2 | RECTANGULAR | FLANGE MOUNT | Obsolete | - | EAR99 | HIGH RELIABILITY | DUAL | FLAT | - | unknown | - | R-CDFM-F2 | Not Qualified | SINGLE | BASE | AMPLIFIER | NPN | 6.7 A | 25 | - | ULTRA HIGH FREQUENCY BAND | 11 pF | ||
| PTB20155 | |||||||||||||||||||||||||||||||||||
| | Mfr. ТипPTB20082Anlielectronics Тип | Ericsson |
Description: RF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 2 | SILICON | ERICSSON POWER MODULES AB | 1 | CERAMIC, METAL-SEALED COFIRED | FLANGE MOUNT, R-CDFM-F2 | RECTANGULAR | FLANGE MOUNT | Transferred | No | EAR99 | HIGH RELIABILITY | DUAL | FLAT | NOT SPECIFIED | unknown | NOT SPECIFIED | R-CDFM-F2 | Not Qualified | SINGLE | EMITTER | AMPLIFIER | NPN | 1.4 A | - | - | L BAND | - | ||
| PTB20082 | |||||||||||||||||||||||||||||||||||
| | Mfr. ТипPTB20156Anlielectronics Тип | Ericsson |
RF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 2 | SILICON | ERICSSON POWER MODULES AB | 1 | CERAMIC, METAL-SEALED COFIRED | FLANGE MOUNT, R-CDFM-F2 | RECTANGULAR | FLANGE MOUNT | Obsolete | - | EAR99 | HIGH RELIABILITY | DUAL | FLAT | - | unknown | - | R-CDFM-F2 | Not Qualified | SINGLE | BASE | AMPLIFIER | NPN | 2 A | - | - | L BAND | - | ||
| PTB20156 | |||||||||||||||||||||||||||||||||||
| | Mfr. ТипPTB20003Anlielectronics Тип | Ericsson |
Description: RF Power Bipolar Transistor, Ultra High Frequency Band, Silicon, NPN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 6 | SILICON | ERICSSON POWER MODULES AB | 1 | CERAMIC, METAL-SEALED COFIRED | FLANGE MOUNT, R-CDFM-F6 | RECTANGULAR | FLANGE MOUNT | Obsolete | - | EAR99 | HIGH RELIABILITY | DUAL | FLAT | - | unknown | - | R-CDFM-F6 | Not Qualified | SINGLE | EMITTER | AMPLIFIER | NPN | 1.7 A | 20 | 25 V | ULTRA HIGH FREQUENCY BAND | - | ||
| PTB20003 | |||||||||||||||||||||||||||||||||||
| | Mfr. ТипPTB20193Anlielectronics Тип | Ericsson |
RF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 2 | SILICON | ERICSSON POWER MODULES AB | 1 | CERAMIC, METAL-SEALED COFIRED | FLANGE MOUNT, R-CDFM-F2 | RECTANGULAR | FLANGE MOUNT | Obsolete | - | EAR99 | HIGH RELIABILITY | DUAL | FLAT | - | unknown | - | R-CDFM-F2 | Not Qualified | SINGLE | - | AMPLIFIER | NPN | 8 A | 20 | 50 V | L BAND | - | ||
| PTB20193 | |||||||||||||||||||||||||||||||||||
| | Mfr. ТипPTB20146Anlielectronics Тип | Ericsson |
RF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 8 | SILICON | ERICSSON POWER MODULES AB | 1 | CERAMIC, METAL-SEALED COFIRED | SMALL OUTLINE, R-CDSO-G8 | RECTANGULAR | SMALL OUTLINE | Obsolete | - | EAR99 | HIGH RELIABILITY | DUAL | GULL WING | - | unknown | - | R-CDSO-G8 | Not Qualified | SINGLE | - | AMPLIFIER | NPN | 0.5 A | 20 | - | L BAND | - | ||
| PTB20146 | |||||||||||||||||||||||||||||||||||
| | Mfr. ТипPTB20148Anlielectronics Тип | Ericsson |
RF Power Bipolar Transistor, Ultra High Frequency Band, Silicon, NPN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 6 | SILICON | ERICSSON POWER MODULES AB | 1 | CERAMIC, METAL-SEALED COFIRED | FLANGE MOUNT, R-CDFM-F6 | RECTANGULAR | FLANGE MOUNT | Obsolete | - | EAR99 | HIGH RELIABILITY | DUAL | FLAT | - | unknown | - | R-CDFM-F6 | Not Qualified | SINGLE | EMITTER | AMPLIFIER | NPN | 8 A | 20 | 25 V | ULTRA HIGH FREQUENCY BAND | - | ||
| PTB20148 |
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