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| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Mount | Mounting Type | Package / Case | Current - Continuous Drain (Id) @ 25℃ | Number of Elements | Operating Temperature | Packaging | Published | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Power Dissipation | Terminal Position | Terminal Form | Reach Compliance Code | JESD-30 Code | Configuration | Operating Mode | Case Connection | Power - Max | FET Type | Transistor Application | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Continuous Drain Current (ID) | Drain-source On Resistance-Max | Pulsed Drain Current-Max (IDM) | DS Breakdown Voltage-Min | FET Technology | FET Feature | RoHS Status |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr. ТипQJD1210011Anlielectronics Тип | Powerex Inc. |
MOSFET 2N-CH 1200V 100A SIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Chassis Mount | Chassis Mount | Module | 100A Tc | 2 | -40°C~175°C TJ | Bulk | 2014 | Active | 1 (Unlimited) | 20 | EAR99 | 900W | UPPER | UNSPECIFIED | unknown | R-PUFM-X20 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | ENHANCEMENT MODE | ISOLATED | - | 2 N-Channel (Dual) | SWITCHING | 25m Ω @ 100A, 20V | 5V @ 10mA | 10200pF @ 800V | 500nC @ 20V | 1200V 1.2kV | 100A | 0.025Ohm | 250A | 1200V | METAL-OXIDE SEMICONDUCTOR | Silicon Carbide (SiC) | RoHS Compliant | ||
| QJD1210011 | |||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипQJD1210010Anlielectronics Тип | Powerex Inc. |
MOSFET 2N-CH 1200V 100A SIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Chassis Mount | Chassis Mount | Module | 100A Tc | - | -40°C~175°C TJ | Bulk | 2014 | Active | 1 (Unlimited) | - | - | 1.08kW | - | - | unknown | - | - | - | - | 1080W | 2 N-Channel (Dual) | - | 25m Ω @ 100A, 20V | 5V @ 10mA | 10200pF @ 800V | 500nC @ 20V | 1200V 1.2kV | 100A | - | - | - | - | Silicon Carbide (SiC) | RoHS Compliant | ||
| QJD1210010 | |||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипQJD1210SA1Anlielectronics Тип | Powerex Inc. |
MOSFET 2N-CH 1200V 100A SIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Chassis Mount | Chassis Mount | Module | - | - | -40°C~150°C TJ | Bulk | - | Obsolete | 1 (Unlimited) | - | - | 520W | - | - | unknown | - | - | - | - | 520W | 2 N-Channel (Dual) | - | 17m Ω @ 100A, 15V | 1.6V @ 34mA | 8200pF @ 10V | 330nC @ 15V | 1200V 1.2kV | 100A | - | - | - | - | Standard | RoHS Compliant | ||
| QJD1210SA1 | |||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипQJD1210SA2Anlielectronics Тип | Powerex Inc. |
MOSFET 2N-CH 1200V 100A SIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Chassis Mount | Chassis Mount | Module | - | - | -40°C~150°C TJ | Bulk | - | Obsolete | 1 (Unlimited) | - | - | 415W | - | - | unknown | - | - | - | - | 415W | 2 N-Channel (Dual) | - | 17m Ω @ 100A, 15V | 1.6V @ 34mA | 8200pF @ 10V | 330nC @ 15V | 1200V 1.2kV | 100A | - | - | - | - | Standard | RoHS Compliant | ||
| QJD1210SA2 | |||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипQJD1210SB1Anlielectronics Тип | Powerex Inc. |
MOD MOSFET 1200V 10A DUAL SIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | Active | 1 (Unlimited) | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | RoHS Compliant | ||
| QJD1210SB1 |
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