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| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Surface Mount | Number of Terminals | Transistor Element Material | Drain Current-Max (ID) | Ihs Manufacturer | Manufacturer | Manufacturer Part Number | Number of Elements | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Voltage Rating (DC) | JESD-609 Code | ECCN Code | Terminal Finish | Additional Feature | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Reach Compliance Code | Current Rating | Pin Count | JESD-30 Code | Qualification Status | Configuration | Operating Mode | Power Dissipation | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | Polarity/Channel Type | Continuous Drain Current (ID) | DS Breakdown Voltage-Min | FET Technology | Highest Frequency Band | Power Gain-Min (Gp) | Lead Free |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr. ТипBF244AAnlielectronics Тип | National Semiconductor |
Trans Jfet N-ch 50MA 3PIN TO-92
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| BF244A | |||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипNE3508M04-T2-AAnlielectronics Тип | National Semiconductor |
Small Signal GaAs FETs L to S Band Lo Noise Amplifier N-Ch HJFET
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 4 | SILICON | 0.03 A | NEC ELECTRONICS CORP | NEC Electronics Group | NE3508M04-T2-A | 1 | PLASTIC/EPOXY | SMALL OUTLINE, R-PDSO-F4 | RECTANGULAR | SMALL OUTLINE | Transferred | NOT SPECIFIED | 5.3 | - | Yes | - | e6 | EAR99 | TIN BISMUTH | LOW NOISE | DUAL | FLAT | NOT SPECIFIED | compliant | - | 4 | R-PDSO-F4 | Not Qualified | SINGLE | DEPLETION MODE | - | DRAIN | AMPLIFIER | - | N-CHANNEL | - | 3 V | HETERO-JUNCTION | S BAND | 12 dB | - | ||
| NE3508M04-T2-A | |||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипBF256-AAnlielectronics Тип | National Semiconductor |
-
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| BF256-A | |||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипJ211Anlielectronics Тип | National Semiconductor |
-
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | IDEC | LB8K-32ST3D-6H | - | - | - | - | - | - | - | - | Non-Compliant | - | 25 V | - | - | - | - | - | - | - | - | 10 mA | - | - | - | - | - | 350 mW | - | - | 1.5 V | - | 15 mA | - | - | - | - | Lead Free | ||
| J211 | |||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMMBF4416Anlielectronics Тип | National Semiconductor |
-
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| MMBF4416 |
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