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| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Package / Case | Channel Mode | Id - Continuous Drain Current | Maximum Operating Temperature | Minimum Operating Temperature | Mounting Styles | Pd - Power Dissipation | Qg - Gate Charge | Rds On - Drain-Source Resistance | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Series | Technology | Number of Channels |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr. ТипMRF5812LFAnlielectronics Тип | Qorvo |
RF Power Transisto
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| MRF5812LF | ||||||||||||||||||||||
| | Mfr. ТипUF4C120053K4SAnlielectronics Тип | Qorvo |
MOSFET 1200V/53mOhm, N-Off SiC CASCODE, G4 FAST, TO-247-4L, REDUCED RTH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | TO-247-4 | Depletion | 34 A | + 175 C | - 55 C | Through Hole | 263 W | 37.8 nC | 67 mOhms | N-Channel | 1.2 kV | - 20 V, + 20 V | 6 V | - | SiC | 1 Channel | ||
| UF4C120053K4S | ||||||||||||||||||||||
| | Mfr. ТипUJ3C120070K3SAnlielectronics Тип | Qorvo |
MOSFET 1200V/70mOhm, SiC, CASCODE, G3, TO-247-3L, REDUCED Rth
Сборник данных
Сравнение
| Min.:1 Mult.:1 | TO-247-3 | Enhancement | 34.5 A | + 175 C | - 55 C | Through Hole | 254.2 W | 46 nC | 90 mOhms | N-Channel | 1.2 kV | - 12 V, + 12 V | 6 V | UJ3C | SiC | 1 Channel | ||
| UJ3C120070K3S | ||||||||||||||||||||||
| | Mfr. ТипUF3C120400K3SAnlielectronics Тип | Qorvo |
MOSFET 1200V/400mOhm, SiC, FAST CASCODE, G3, TO-247-3L, REDUCED Rth
Сборник данных
Сравнение
| Min.:1 Mult.:1 | TO-247-3 | Enhancement | 7.6 A | + 175 C | - 55 C | Through Hole | 100 W | 27.5 nC | 1.07 Ohms | N-Channel | 1.2 kV | - 25 V, + 25 V | 6 V | UF3C | SiC | 1 Channel | ||
| UF3C120400K3S | ||||||||||||||||||||||
| | Mfr. ТипUJ3C065080B3Anlielectronics Тип | Qorvo |
MOSFET 650V/80mOhm, SiC, CASCODE, G3, D2PAK-3L
Сборник данных
Сравнение
| Min.:1 Mult.:1 | D2PAK-3 | Enhancement | 25 A | + 175 C | - 55 C | SMD/SMT | 115 W | 51 nC | 100 mOhms | N-Channel | 650 V | - 25 V, + 25 V | 4 V | UJ3C | SiC | 1 Channel | ||
| UJ3C065080B3 | ||||||||||||||||||||||
| | Mfr. ТипUF3C120040K3SAnlielectronics Тип | Qorvo |
MOSFET 1200V/40mOhm, SiC, FAST CASCODE, G3, TO-247-3L, REDUCED Rth
Сборник данных
Сравнение
| Min.:1 Mult.:1 | TO-247-3 | Enhancement | 65 A | + 175 C | - 55 C | Through Hole | 429 W | 51 nC | 45 mOhms | N-Channel | 1.2 kV | - 25 V, + 25 V | 4 V | UF3C | SiC | 1 Channel | ||
| UF3C120040K3S | ||||||||||||||||||||||
| | Mfr. ТипUF3C120150K4SAnlielectronics Тип | Qorvo |
MOSFET 1200V/150mOhm, SiC, FAST CASCODE, G3, TO-247-4L, REDUCED Rth
Сборник данных
Сравнение
| Min.:1 Mult.:1 | TO-247-4 | Enhancement | 18.4 A | + 175 C | - 55 C | Through Hole | 166.7 W | 25.7 nC | 330 mOhms | N-Channel | 1.2 kV | - 25 V, + 25 V | 3.5 V | UF3C | SiC | 1 Channel | ||
| UF3C120150K4S | ||||||||||||||||||||||
| | Mfr. ТипUF3C065080T3SAnlielectronics Тип | Qorvo |
MOSFET 650V/80mOhm, SiC, FAST CASCODE, G3, TO-220-3L, REDUCED Rth
Сборник данных
Сравнение
| Min.:1 Mult.:1 | TO-220-3 | Enhancement | 31 A | + 175 C | - 55 C | Through Hole | 190 W | 51 nC | 100 mOhms | N-Channel | 650 V | - 25 V, + 25 V | 4 V | UF3C | SiC | 1 Channel | ||
| UF3C065080T3S | ||||||||||||||||||||||
| | Mfr. ТипUJ3C120040K3SAnlielectronics Тип | Qorvo |
MOSFET 1200V/40mOhm, SiC, CASCODE, G3, TO-247-3L, REDUCED Rth
Сборник данных
Сравнение
| Min.:1 Mult.:1 | TO-247-3 | Enhancement | 65 A | + 175 C | - 55 C | Through Hole | 429 W | 51 nC | 45 mOhms | N-Channel | 1.2 kV | - 25 V, + 25 V | 4 V | UJ3C | SiC | 1 Channel | ||
| UJ3C120040K3S | ||||||||||||||||||||||
| | Mfr. ТипUF3SC120009K4SAnlielectronics Тип | Qorvo |
MOSFET 1200V/9mOhm, SiC, N-OFF STACKED CASCODE, G3 FAST, TO-247-4L
Сборник данных
Сравнение
| Min.:1 Mult.:1 | TO-247-4 | Enhancement | 120 A | + 175 C | - 55 C | Through Hole | 789 W | 234 nC | 11 mOhms | N-Channel | 1.2 kV | - 20 V, + 20 V | 4 V | UF3SC | SiC | 1 Channel | ||
| UF3SC120009K4S | ||||||||||||||||||||||
| | Mfr. ТипUF3SC065007K4SAnlielectronics Тип | Qorvo |
MOSFET 650V/7mOhm, SiC, N-OFF STACKED CASCODE, G3 FAST, TO-247-4L
Сборник данных
Сравнение
| Min.:1 Mult.:1 | TO-247-4 | Enhancement | 120 A | + 175 C | - 55 C | Through Hole | 789 W | 214 nC | 9 mOhms | N-Channel | 650 V | - 12 V, + 12 V | 6 V | UF3SC | SiC | 1 Channel | ||
| UF3SC065007K4S | ||||||||||||||||||||||
| | Mfr. ТипUF3C065080K4SAnlielectronics Тип | Qorvo |
MOSFET 650V/80mOhm, SiC, FAST CASCODE, G3, TO-247-4L, REDUCED Rth
Сборник данных
Сравнение
| Min.:1 Mult.:1 | TO-247-4 | Enhancement | 31 A | + 175 C | - 55 C | Through Hole | 190 W | 51 nC | 100 mOhms | N-Channel | 650 V | - 25 V, + 25 V | 4 V | UF3C | SiC | 1 Channel | ||
| UF3C065080K4S | ||||||||||||||||||||||
| | Mfr. ТипUF3C065080B7SAnlielectronics Тип | Qorvo |
MOSFET 650V/80mOhm, SiC, FAST CASCODE, G3, D2PAK-7L, REDUCED Rth
Сборник данных
Сравнение
| Min.:1 Mult.:1 | D2PAK-7 | Enhancement | 27 A | + 175 C | - 55 C | SMD/SMT | 136.4 W | 23 nC | 85 mOhms | N-Channel | 650 V | - 25 V, + 25 V | 6 V | UF3C | SiC | 1 Channel | ||
| UF3C065080B7S | ||||||||||||||||||||||
| | Mfr. ТипUF3SC065030B7SAnlielectronics Тип | Qorvo |
MOSFET 650V/30mOhm, SiC, FAST STACK CASCODE, G3, D2PAK-7L, REDUCED Rth
Сборник данных
Сравнение
| Min.:1 Mult.:1 | D2PAK-7 | Enhancement | 62 A | + 175 C | - 55 C | SMD/SMT | 214 W | 43 nC | 27 mOhms | N-Channel | 650 V | - 25 V, + 25 V | 6 V | UF3SC | SiC | 1 Channel | ||
| UF3SC065030B7S | ||||||||||||||||||||||
| | Mfr. ТипUF3C120080K3SAnlielectronics Тип | Qorvo |
MOSFET 1200V/80mOhm, SiC, FAST CASCODE, G3, TO-247-3L, REDUCED Rth
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Enhancement | 33 A | + 175 C | - 55 C | Through Hole | 254.2 W | 51 nC | 100 mOhms | N-Channel | 1.2 kV | - 25 V, + 25 V | 6 V | - | SiC | 1 Channel | ||
| UF3C120080K3S | ||||||||||||||||||||||
| | Mfr. ТипUF3C120080K4SAnlielectronics Тип | Qorvo |
MOSFET 1200V/80mOhm, SiC, FAST CASCODE, G3, TO-247-4L, REDUCED Rth
Сборник данных
Сравнение
| Min.:1 Mult.:1 | TO-247-4 | Enhancement | 33 A | + 175 C | - 55 C | Through Hole | 254.2 W | 51 nC | 100 mOhms | N-Channel | 1.2 kV | - 25 V, + 25 V | 6 V | - | SiC | 1 Channel | ||
| UF3C120080K4S | ||||||||||||||||||||||
| | Mfr. ТипUJ4SC075005L8SAnlielectronics Тип | Qorvo |
MOSFET 750V/5mO,SICFET,G4,TOLL
Сборник данных
Сравнение
| Min.:1 Mult.:1 | MO-229-8 | Enhancement | 120 A | + 175 C | - 55 C | SMD/SMT | 1.153 kW | 164 nC | 5 mOhms | N-Channel | 750 V | - 20 V, + 20 V | 6 V | - | SiC | 1 Channel | ||
| UJ4SC075005L8S | ||||||||||||||||||||||
| | Mfr. ТипUF3SC120040B7SAnlielectronics Тип | Qorvo |
MOSFET 1200V/40mOhm, SiC, FAST STACK CASCODE, G3, D2PAK-7L, REDUCED Rth
Сборник данных
Сравнение
| Min.:1 Mult.:1 | D2PAK-7 | Enhancement | 47 A | + 175 C | - 55 C | SMD/SMT | 214 W | 43 nC | 35 mOhms | N-Channel | 1.2 kV | - 25 V, + 25 V | 6 V | UF3SC | SiC | 1 Channel | ||
| UF3SC120040B7S | ||||||||||||||||||||||
| | Mfr. ТипUJ4SC075008L8SAnlielectronics Тип | Qorvo |
MOSFET 750V/8mO,SICFET,G4,TOLL
Сборник данных
Сравнение
| Min.:1 Mult.:1 | MO-229-8 | Enhancement | 106 A | + 175 C | - 55 C | SMD/SMT | 600 W | 75 nC | 8 mOhms | N-Channel | 750 V | - 20 V, + 20 V | 5.5 V | - | SiC | 1 Channel | ||
| UJ4SC075008L8S | ||||||||||||||||||||||
| | Mfr. ТипUF3C170400B7SAnlielectronics Тип | Qorvo |
MOSFET 1700V/400mOhm, SiC, FAST CASCODE, G3, D2PAK-7L, ENHANCED Rth
Сборник данных
Сравнение
| Min.:1 Mult.:1 | D2PAK-7L | Enhancement | 7.6 A | + 175 C | - 55 C | SMD/SMT | 100 W | 23.1 nC | 400 mOhms | N-Channel | 1.2 kV | - 25 V, + 25 V | 6 V | - | SiC | 1 Channel | ||
| UF3C170400B7S |
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