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| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Package / Case | Channel Mode | Development Kit | Factory Pack QuantityFactory Pack Quantity | Forward Transconductance - Min | Id - Continuous Drain Current | Maximum Operating Temperature | Minimum Operating Temperature | Mounting Styles | Pd - Power Dissipation | Qg - Gate Charge | Rds On - Drain-Source Resistance | RoHS | Tradename | Transistor Polarity | Typical Turn-Off Delay Time | Typical Turn-On Delay Time | Unit Weight | Vds - Drain-Source Breakdown Voltage | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Packaging | Configuration | Number of Channels | Rise Time | Transistor Type | Height | Length | Width |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr. ТипAPT5010LVRGAnlielectronics Тип | Atmel (Microchip Technology) |
MOSFET FG, MOSFET, 500V, TO-264, RoHSView in Development Tools Selector
Сборник данных
Сравнение
| Min.:1 Mult.:1 | TO-247-3 | Enhancement | - | 1 | - | 47 A | + 150 C | - 55 C | Through Hole | 520 W | 470 nC | 100 mOhms | Details | - | N-Channel | - | - | 0.211644 oz | 500 V | - 30 V, + 30 V | 2 V | Tube | Single | 1 Channel | - | - | - | - | - | ||
| APT5010LVRG | |||||||||||||||||||||||||||||||||||
| | Mfr. ТипAPT10050LVRGAnlielectronics Тип | Atmel (Microchip Technology) |
MOSFET FG, MOSFET,1000V, TO-264, RoHSView in Development Tools Selector
Сборник данных
Сравнение
| Min.:1 Mult.:1 | TO-264-3 | Enhancement | - | 1 | - | 21 A | + 150 C | - 55 C | Through Hole | 520 W | 500 nC | 500 mOhms | Details | - | N-Channel | - | - | 0.352740 oz | 1 kV | - 30 V, + 30 V | 2 V | Tube | Single | 1 Channel | - | - | - | - | - | ||
| APT10050LVRG | |||||||||||||||||||||||||||||||||||
| | Mfr. ТипAPT8M100BAnlielectronics Тип | Atmel (Microchip Technology) |
MOSFET FG, MOSFET, 1000V, TO-247View in Development Tools Selector
Сборник данных
Сравнение
| Min.:1 Mult.:1 | TO-247-3 | Enhancement | - | 1 | 7.5 S | 8 A | + 150 C | - 55 C | Through Hole | 290 W | 60 nC | 1.53 Ohms | Details | Power MOS 8 | N-Channel | 29 ns | 8.5 ns | 0.211644 oz | 1 kV | - 30 V, + 30 V | 4 V | Tube | Single | 1 Channel | 7.8 ns | - | 5.31 mm | 21.46 mm | 16.26 mm | ||
| APT8M100B | |||||||||||||||||||||||||||||||||||
| | Mfr. ТипAPT56M50LAnlielectronics Тип | Atmel (Microchip Technology) |
MOSFET FG, MOSFET, 500V, TO-264View in Development Tools Selector
Сборник данных
Сравнение
| Min.:1 Mult.:1 | TO-264-3 | Enhancement | - | 1 | 43 S | 56 A | + 150 C | - 55 C | Through Hole | 780 W | 220 nC | 85 mOhms | Details | Power MOS 8 | N-Channel | 100 ns | 38 ns | 0.352740 oz | 500 V | - 30 V, + 30 V | 4 V | Tube | - | 1 Channel | 45 ns | - | 5.21 mm | 26.49 mm | 20.5 mm | ||
| APT56M50L | |||||||||||||||||||||||||||||||||||
| | Mfr. ТипAPT1001RBVRGAnlielectronics Тип | Atmel (Microchip Technology) |
MOSFET FG, MOSFET, 1000V, TO-247, RoHSView in Development Tools Selector
Сборник данных
Сравнение
| Min.:1 Mult.:1 | TO-247-3 | Enhancement | - | 1 | - | 11 A | + 150 C | - 55 C | Through Hole | 280 W | 225 nC | 1 Ohms | Details | - | N-Channel | - | - | 0.211644 oz | 1 kV | - 30 V, + 30 V | 2 V | Tube | Single | 1 Channel | - | - | - | - | - | ||
| APT1001RBVRG | |||||||||||||||||||||||||||||||||||
| | Mfr. ТипAPT24F50BAnlielectronics Тип | Atmel (Microchip Technology) |
MOSFET FG, FREDFET, 500V, TO-247View in Development Tools Selector
Сборник данных
Сравнение
| Min.:1 Mult.:1 | TO-247-3 | Enhancement | - | 1 | 17 S | 24 A | + 150 C | - 55 C | Through Hole | 335 W | 90 nC | 240 mOhms | Details | - | N-Channel | 41 ns | 16 ns | 0.211644 oz | 500 V | - 30 V, + 30 V | 4 V | Tube | Single | 1 Channel | 19 ns | - | 21.46 mm | 16.26 mm | 5.31 mm | ||
| APT24F50B | |||||||||||||||||||||||||||||||||||
| | Mfr. ТипAPT4M120KAnlielectronics Тип | Atmel (Microchip Technology) |
MOSFET FG, MOSFET, 1200V, TO-220View in Development Tools Selector
Сборник данных
Сравнение
| Min.:1 Mult.:1 | TO-220-3 | Enhancement | - | 1 | 4.5 S | 5 A | + 150 C | - 55 C | Through Hole | 225 W | 43 nC | 3.12 Ohms | Details | Power MOS 8 | N-Channel | 24 ns | 7.4 ns | 0.068784 oz | 1.2 kV | - 30 V, + 30 V | 4 V | Tube | Single | 1 Channel | 4.4 ns | - | 9.19 mm | 10.26 mm | 4.72 mm | ||
| APT4M120K | |||||||||||||||||||||||||||||||||||
| | Mfr. ТипAPT6025BVRGAnlielectronics Тип | Atmel (Microchip Technology) |
MOSFET FG, MOSFET, 600V, TO-247, RoHSView in Development Tools Selector
Сборник данных
Сравнение
| Min.:1 Mult.:1 | TO-247-3 | Enhancement | - | 1 | - | 25 A | + 150 C | - 55 C | Through Hole | 370 W | 275 nC | 250 mOhms | Details | - | N-Channel | - | - | 0.211644 oz | 600 V | - 30 V, + 30 V | 2 V | Tube | Single | 1 Channel | - | - | - | - | - | ||
| APT6025BVRG | |||||||||||||||||||||||||||||||||||
| | Mfr. ТипAPT6015LVRGAnlielectronics Тип | Atmel (Microchip Technology) |
MOSFET FG, MOSFET, 600V, TO-264, RoHSView in Development Tools Selector
Сборник данных
Сравнение
| Min.:1 Mult.:1 | TO-247-3 | Enhancement | - | 1 | - | 38 A | + 150 C | - 55 C | Through Hole | 520 W | 475 nC | 150 mOhms | Details | - | N-Channel | - | - | 0.211644 oz | 600 V | - 30 V, + 30 V | 2 V | Tube | Single | 1 Channel | - | - | - | - | - | ||
| APT6015LVRG | |||||||||||||||||||||||||||||||||||
| | Mfr. ТипAPT28M120B2Anlielectronics Тип | Atmel (Microchip Technology) |
MOSFET FG, MOSFET, 1200V, TO-247 T-MAXView in Development Tools Selector
Сборник данных
Сравнение
| Min.:1 Mult.:1 | T-MAX-3 | Enhancement | - | 1 | 31 S | 29 A | + 150 C | - 55 C | Through Hole | 1.135 kW | 300 nC | 530 mOhms | Details | - | N-Channel | 170 ns | 50 ns | 0.208116 oz | 1.2 kV | - 30 V, + 30 V | 4 V | Tube | Single | 1 Channel | 31 ns | - | 21.46 mm | 16.26 mm | 5.31 mm | ||
| APT28M120B2 | |||||||||||||||||||||||||||||||||||
| | Mfr. ТипAPT5020BVFRGAnlielectronics Тип | Atmel (Microchip Technology) |
MOSFET FG, FREDFET, 500V, TO-247, RoHSView in Development Tools Selector
Сборник данных
Сравнение
| Min.:1 Mult.:1 | TO-247-3 | Enhancement | - | 1 | - | 26 A | + 150 C | - 55 C | Through Hole | 300 W | 225 nC | 200 mOhms | Details | - | N-Channel | - | - | 0.211644 oz | 500 V | - 30 V, + 30 V | 2 V | Tube | Single | 1 Channel | - | - | - | - | - | ||
| APT5020BVFRG | |||||||||||||||||||||||||||||||||||
| | Mfr. ТипAPT6038BLLGAnlielectronics Тип | Atmel (Microchip Technology) |
MOSFET FG, MOSFET,600V, TO-247, RoHSView in Development Tools Selector
Сборник данных
Сравнение
| Min.:1 Mult.:1 | TO-247-3 | Enhancement | - | 1 | - | 17 A | + 150 C | - 55 C | Through Hole | 265 W | 43 nC | 380 mOhms | Details | - | N-Channel | - | - | 0.211644 oz | 600 V | - 30 V, + 30 V | 3 V | Tube | Single | 1 Channel | - | - | - | - | - | ||
| APT6038BLLG | |||||||||||||||||||||||||||||||||||
| | Mfr. ТипAPT30M85BVRGAnlielectronics Тип | Atmel (Microchip Technology) |
MOSFET FG, MOSFET, 300V, TO-247, RoHSView in Development Tools Selector
Сборник данных
Сравнение
| Min.:1 Mult.:1 | TO-247-3 | Enhancement | - | 1 | - | 40 A | + 150 C | - 55 C | Through Hole | 300 W | 130 nC | 85 mOhms | Details | Power MOS V | N-Channel | 43 ns | 12 ns | 0.211644 oz | 300 V | - 30 V, + 30 V | 4 V | Tube | Single | 1 Channel | 10 ns | - | 5.31 mm | 21.46 mm | 16.26 mm | ||
| APT30M85BVRG | |||||||||||||||||||||||||||||||||||
| | Mfr. ТипAPT14F100BAnlielectronics Тип | Atmel (Microchip Technology) |
MOSFET FG, FREDFET, 1000V, TO-247View in Development Tools Selector
Сборник данных
Сравнение
| Min.:1 Mult.:1 | TO-247-3 | Enhancement | - | 1 | 16 S | 14 A | + 150 C | - 55 C | Through Hole | 500 W | 120 nC | 980 mOhms | Details | - | N-Channel | 95 ns | 28 ns | 0.211644 oz | 1 kV | - 30 V, + 30 V | 4 V | Tube | Single | 1 Channel | 29 ns | 1 N-Channel | - | - | - | ||
| APT14F100B | |||||||||||||||||||||||||||||||||||
| | Mfr. ТипAPT30M70BVRGAnlielectronics Тип | Atmel (Microchip Technology) |
MOSFET FG, MOSFET, 300V, TO-247, RoHSView in Development Tools Selector
Сборник данных
Сравнение
| Min.:1 Mult.:1 | TO-247-3 | Enhancement | - | 1 | - | 48 A | + 150 C | - 55 C | Through Hole | 370 W | 225 nC | 70 mOhms | Details | - | N-Channel | 57 ns | 14 ns | 0.211644 oz | 300 V | - 30 V, + 30 V | 2 V | Tube | Single | 1 Channel | 21 ns | 1 N-Channel | - | - | - | ||
| APT30M70BVRG | |||||||||||||||||||||||||||||||||||
| | Mfr. ТипAPT5017BVFRGAnlielectronics Тип | Atmel (Microchip Technology) |
MOSFET FG, FREDFET, 500V, TO-247, RoHSView in Development Tools Selector
Сборник данных
Сравнение
| Min.:1 Mult.:1 | TO-247-3 | Enhancement | - | 1 | - | 30 A | + 150 C | - 55 C | Through Hole | 370 W | 300 nC | 170 mOhms | Details | - | N-Channel | - | - | 0.211644 oz | 500 V | - 30 V, + 30 V | 2 V | Tube | Single | 1 Channel | - | - | - | - | - | ||
| APT5017BVFRG | |||||||||||||||||||||||||||||||||||
| | Mfr. ТипAPT30M61BLLGAnlielectronics Тип | Atmel (Microchip Technology) |
MOSFET FG, MOSFET, 300V, TO-247, RoHSView in Development Tools Selector
Сборник данных
Сравнение
| Min.:1 Mult.:1 | TO-247-3 | Enhancement | - | 1 | - | 54 A | + 150 C | - 55 C | Through Hole | 403 W | 64 nC | 61 mOhms | Details | - | N-Channel | - | - | 0.211644 oz | 300 V | - 30 V, + 30 V | 3 V | Tube | Single | 1 Channel | - | - | - | - | - | ||
| APT30M61BLLG | |||||||||||||||||||||||||||||||||||
| | Mfr. ТипMSC080SMA120SAnlielectronics Тип | Atmel (Microchip Technology) |
MOSFET UNRLS, FG, SIC MOSFET, TO-268View in Development Tools Selector
Сборник данных
Сравнение
| Min.:1 Mult.:1 | D3PAK-3 | Enhancement | - | 1 | - | 35 A | + 175 C | - 55 C | SMD/SMT | 182 W | 64 nC | 100 mOhms | Details | - | N-Channel | - | - | 0.218699 oz | 1.2 kV | - 10 V, + 23 V | 1.8 V | Tube | Single | 1 Channel | - | - | - | - | - | ||
| MSC080SMA120S | |||||||||||||||||||||||||||||||||||
| | Mfr. ТипAPT50M50JVRAnlielectronics Тип | Atmel (Microchip Technology) |
MOSFET FG, MOSFET, 500V, 0.050_OHM, SOT-227View in Development Tools Selector
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Enhancement | - | 1 | - | 77 A | + 150 C | - 55 C | Screw Mount | 700 W | 675 nC | 50 mOhms | Details | - | N-Channel | - | - | 2.102659 oz | 500 V | - 30 V, + 30 V | 4 V | Tube | - | 1 Channel | - | - | - | - | - | ||
| APT50M50JVR | |||||||||||||||||||||||||||||||||||
| | Mfr. ТипAPT56M50B2Anlielectronics Тип | Atmel (Microchip Technology) |
MOSFET FG, MOSFET, 500V, TO-247 T-MAXView in Development Tools Selector
Сборник данных
Сравнение
| Min.:1 Mult.:1 | T-MAX-3 | Enhancement | - | 1 | 43 S | 56 A | + 150 C | - 55 C | Through Hole | 780 W | 220 nC | 85 mOhms | Details | Power MOS 8 | N-Channel | 100 ns | 38 ns | 0.208116 oz | 500 V | - 30 V, + 30 V | 4 V | Tube | Single | 1 Channel | 45 ns | - | 5.31 mm | 21.46 mm | 16.26 mm | ||
| APT56M50B2 |
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