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| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Mounting Type | Package / Case | Supplier Device Package | Case | Certificates | Current - Continuous Drain (Id) @ 25℃ | Drain current | Drain-source voltage | Drive Voltage (Max Rds On, Min Rds On) | Electrical mounting | Features of semiconductor devices | Gate-source voltage | Kind of channel | Kind of package | Kind of package1 | Mechanical mounting | Mfr | Mounting | Package | Polarisation | Power Dissipation (Max) | Product Status | Pulsed drain current | Semiconductor structure | Type of module | Type of transistor | Operating Temperature | Series | Technology | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Vgs (Max) | FET Feature |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr. ТипS2M0080120DAnlielectronics Тип | SMC Diode Solutions |
MOSFET SILICON CARBIDE SIC 1200V
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Through Hole | TO-247-3 | TO-247AD | - | - | 41A (Tc) | - | - | 20V | - | - | - | - | - | - | - | SMC Diode Solutions | - | Tube | - | 231W (Tc) | Active | - | - | - | - | -55°C ~ 175°C (TJ) | - | - | N-Channel | 100mOhm @ 20A, 20V | 4V @ 10mA | 1324 pF @ 1000 V | 54 nC @ 20 V | 1200 V | +25V, -10V | - | ||
| S2M0080120D | |||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипS2M0040120KAnlielectronics Тип | SMC Diode Solutions |
MOSFET SILICON CARBIDE SIC 1200V
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Through Hole | TO-247-4 | TO-247-4 | - | - | - | - | - | - | - | - | - | - | - | - | - | SMC Diode Solutions | - | Tube | - | - | Active | - | - | - | - | - | - | SiCFET (Silicon Carbide) | N-Channel | - | - | - | - | 1200 V | - | - | ||
| S2M0040120K | |||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипS2M0025120DAnlielectronics Тип | SMC Diode Solutions |
MOSFET SILICON CARBIDE SIC 1200V
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Through Hole | TO-247-3 | TO-247AD | - | - | 63A (Tj) | - | - | 20V | - | - | - | - | - | - | - | SMC Diode Solutions | - | Tube | - | 446W (Tc) | Active | - | - | - | - | -55°C ~ 175°C (TJ) | - | - | N-Channel | 34mOhm @ 50A, 20V | 4V @ 15mA | 4402 pF @ 1000 V | 130 nC @ 20 V | 1200 V | +25V, -10V | - | ||
| S2M0025120D | |||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипS2M0016120KAnlielectronics Тип | SMC DIODE SOLUTIONS |
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 140A; Idm: 314A; 714W
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | TO247-4 | RoHS compliant | - | 140A | 1.2kV | - | - | Kelvin terminal | -5...20V | enhanced | tube | - | - | - | THT | - | unipolar | - | - | 314A | - | - | N-MOSFET | - | - | - | - | - | - | - | - | - | - | - | ||
| S2M0016120K | |||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипS2M0080120NAnlielectronics Тип | SMC DIODE SOLUTIONS |
Module; single transistor; 1.2kV; 25A; SOT227B; screw; Idm: 82A
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | SOT227B | RoHS compliant | - | 25A | 1.2kV | - | screw | Kelvin terminal | -5...20V | enhanced | - | - | screw | - | - | - | unipolar | - | - | 82A | single transistor | MOSFET transistor | - | - | - | - | - | - | - | - | - | - | - | - | ||
| S2M0080120N | |||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипS2M0025120JAnlielectronics Тип | SMC DIODE SOLUTIONS |
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 70A; Idm: 250A; 311W
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | TO263-7 | RoHS compliant | - | 70A | 1.2kV | - | - | Kelvin terminal | -5...20V | enhanced | reel | tape | - | - | SMD | - | unipolar | - | - | 250A | - | - | N-MOSFET | - | - | - | - | - | - | - | - | - | - | - | ||
| S2M0025120J | |||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипS2M0040120K-1Anlielectronics Тип | SMC DIODE SOLUTIONS |
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 55A; Idm: 160A; 320.5W
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | TO247-4 | RoHS compliant | - | 55A | 1.2kV | - | - | Kelvin terminal | -5...20V | enhanced | tube | - | - | - | THT | - | unipolar | - | - | 160A | - | - | N-MOSFET | - | - | - | - | - | - | - | - | - | - | - | ||
| S2M0040120K-1 | |||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипS2M0080120KAnlielectronics Тип | SMC Diode Solutions |
MOSFET SILICON CARBIDE SIC 1200V
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Through Hole | TO-247-4 | TO-247-4 | - | - | 41A (Tc) | - | - | 20V | - | - | - | - | - | - | - | SMC Diode Solutions | - | Tube | - | 231W (Tc) | Active | - | - | - | - | -55°C ~ 175°C (TJ) | - | - | N-Channel | 100mOhm @ 20A, 20V | 4V @ 10mA | 1324 pF @ 1000 V | 54 nC @ 20 V | 1200 V | +25V, -10V | - | ||
| S2M0080120K | |||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипS2M0040120DAnlielectronics Тип | SMC Diode Solutions |
MOSFET SILICON CARBIDE SIC 1200V
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Through Hole | TO-247-3 | TO-247-3 | - | - | - | - | - | - | - | - | - | - | - | - | - | SMC Diode Solutions | - | Tube | - | - | Active | - | - | - | - | - | - | SiCFET (Silicon Carbide) | N-Channel | - | - | - | - | 1200 V | - | - | ||
| S2M0040120D | |||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипS2M0025120KAnlielectronics Тип | SMC Diode Solutions |
MOSFET SILICON CARBIDE SIC 1200V
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Through Hole | TO-247-4 | TO-247-4 | - | - | 63A (Tc) | - | - | 20V | - | - | - | - | - | - | - | SMC Diode Solutions | - | Tube | - | 446W (Tc) | Active | - | - | - | - | -55°C ~ 175°C (TJ) | - | - | N-Channel | 34mOhm @ 50A, 20V | 4V @ 15mA | 4402 pF @ 1000 V | 130 nC @ 20 V | 1200 V | +25V, -10V | - | ||
| S2M0025120K | |||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипS2M0016120DAnlielectronics Тип | SMC DIODE SOLUTIONS |
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 140A; Idm: 314A; 714W
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | TO247AD | RoHS compliant | - | 140A | 1.2kV | - | - | - | -5...20V | enhanced | tube | - | - | - | THT | - | unipolar | - | - | 314A | - | - | N-MOSFET | - | - | - | - | - | - | - | - | - | - | - | ||
| S2M0016120D | |||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипS2M0080120JAnlielectronics Тип | SMC DIODE SOLUTIONS |
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 37A; Idm: 82A; 234W
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | TO263-7 | RoHS compliant | - | 37A | 1.2kV | - | - | Kelvin terminal | -5...20V | enhanced | reel | tape | - | - | SMD | - | unipolar | - | - | 82A | - | - | N-MOSFET | - | - | - | - | - | - | - | - | - | - | - | ||
| S2M0080120J |
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