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| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Package / Case | Collector- Emitter Voltage VCEO Max | Continuous Collector Current Ic Max | Factory Pack Quantity | Maximum Gate Emitter Voltage | Maximum Operating Temperature | Minimum Operating Temperature | Mounting Styles | Pd - Power Dissipation | Qualification | RoHS | Unit Weight | Packaging | Configuration |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | Mfr. ТипSTGHU30M65DF2AGAnlielectronics Тип | STMicroelectronics |
IGBTs Automotive-grade trench gate field-stop 650 V, 30 A low-loss M series IGBT
Сборник данных
Сравнение
| Min.:1 Mult.:1 | HU3PAK-7 | 650 V | 57 A | 600 | 20 V | + 175 C | - 55 C | SMD/SMT | 441 W | AEC-Q101 | RoHS Compliant | 0.081836 oz | Reel | Single | ||
| STGHU30M65DF2AG | ||||||||||||||||||||
![]() | Mfr. ТипSTGWA30M65DF2AGAnlielectronics Тип | STMicroelectronics |
IGBTs Automotive-grade trench gate field-stop 650 V, 30 A low-loss M series IGBT
Сборник данных
Сравнение
| Min.:1 Mult.:1 | TO-247-3 | 650 V | 57 A | 30 | 20 V | + 175 C | - 55 C | Through Hole | 441 W | AEC-Q101 | RoHS Compliant | 0.215171 oz | Tube | Single | ||
| STGWA30M65DF2AG |
Индекс :
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