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| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Package / Case | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Factory Pack QuantityFactory Pack Quantity | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | Maximum Operating Temperature | Minimum Operating Temperature | Mounting Styles | Pd - Power Dissipation | RoHS | Tradename | Unit Weight | Packaging | Configuration | Operating Temperature Range | Product | Height | Length | Width |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr. ТипAPT60GA60JD60Anlielectronics Тип | Atmel (Microchip Technology) |
IGBT Modules FG, IGBT-COMBI, 600V, SOT-227View in Development Tools Selector
Сборник данных
Сравнение
| Min.:1 Mult.:1 | SOT-227-4 | 600 V | 2 V | 112 A | 1 | 100 nA | 30 V | + 150 C | - 55 C | Chassis Mount | 356 W | Details | POWER MOS 8, ISOTOP | 1.058219 oz | Tube | Single | - 55 C to + 150 C | IGBT Silicon Modules | 9.6 mm | 38.2 mm | 25.4 mm | ||
| APT60GA60JD60 | |||||||||||||||||||||||||||
| | Mfr. ТипAPT200GN60JAnlielectronics Тип | Atmel (Microchip Technology) |
IGBT Modules FG, IGBT, 600V, 200A, SOT-227View in Development Tools Selector
Сборник данных
Сравнение
| Min.:1 Mult.:1 | SOT-227-4 | 600 V | 1.5 V | 283 A | 1 | 600 nA | 20 V | + 175 C | - 55 C | Chassis Mount | 682 W | Details | ISOTOP | 1.058219 oz | Tube | Single | - 55 C to + 175 C | IGBT Silicon Modules | 9.6 mm | 38.2 mm | 25.4 mm | ||
| APT200GN60J | |||||||||||||||||||||||||||
| | Mfr. ТипAPT150GN120JAnlielectronics Тип | Atmel (Microchip Technology) |
IGBT Modules FG, IGBT, 1200V, 150A, SOT-227View in Development Tools Selector
Сборник данных
Сравнение
| Min.:1 Mult.:1 | SOT-227-4 | 1200 V | 1.7 V | 215 A | 1 | 600 nA | 30 V | + 150 C | - 55 C | Chassis Mount | 625 W | Details | ISOTOP | 1.058219 oz | Tube | Single | - 55 C to + 150 C | IGBT Silicon Modules | 9.6 mm | 38.2 mm | 25.4 mm | ||
| APT150GN120J | |||||||||||||||||||||||||||
| | Mfr. ТипAPTGLQ100H65T3GAnlielectronics Тип | Atmel (Microchip Technology) |
IGBT Modules DOR HOLD CC3214View in Development Tools Selector
Сборник данных
Сравнение
| Min.:1 Mult.:1 | SP3F | 650 V | 1.85 V | 135 A | 1 | 150 nA | 20 V | + 125 C | - 40 C | Chassis Mount | 350 W | - | - | 3.880136 oz | Tube | Full Bridge | - | IGBT Silicon Modules | - | - | - | ||
| APTGLQ100H65T3G | |||||||||||||||||||||||||||
| | Mfr. ТипAPTGT50A120T1GAnlielectronics Тип | Atmel (Microchip Technology) |
IGBT Modules CC8022View in Development Tools Selector
Сборник данных
Сравнение
| Min.:1 Mult.:1 | SP1-12 | 1200 V | 1.7 V | 75 A | 1 | 400 nA | 20 V | + 100 C | - 40 C | Chassis Mount | 277 W | Details | - | 2.821917 oz | Tube | Half Bridge | - | IGBT Silicon Modules | - | - | - | ||
| APTGT50A120T1G | |||||||||||||||||||||||||||
| | Mfr. ТипAPT100GT120JU2Anlielectronics Тип | Atmel (Microchip Technology) |
IGBT Modules CC0006View in Development Tools Selector
Сборник данных
Сравнение
| Min.:1 Mult.:1 | SOT-227-4 | 1200 V | 1.7 V | 140 A | 1 | 400 nA | 20 V | + 150 C | - 55 C | Chassis Mount | 480 W | Details | ISOTOP | 1.058219 oz | Tube | Single | - 55 C to + 150 C | IGBT Silicon Modules | 9.6 mm | 38.2 mm | 25.4 mm | ||
| APT100GT120JU2 | |||||||||||||||||||||||||||
| | Mfr. ТипAPT47GA60JD40Anlielectronics Тип | Atmel (Microchip Technology) |
IGBT Modules IGBT PT MOS 8 Combi 600 V 47 A ISOTOPView in Development Tools Selector
Сборник данных
Сравнение
| Min.:1 Mult.:1 | SOT-227-4 | 600 V | - | 87 A | 1 | 100 nA | 30 V | + 150 C | - 55 C | Screw Mount | 283 W | Details | - | - | Tube | Single | - | IGBT Silicon Modules | - | - | - | ||
| APT47GA60JD40 | |||||||||||||||||||||||||||
| | Mfr. ТипAPTGT30H60T1GAnlielectronics Тип | Atmel (Microchip Technology) |
IGBT Modules DOR CC8008View in Development Tools Selector
Сборник данных
Сравнение
| Min.:1 Mult.:1 | SP1-12 | 600 V | 1.5 V | 50 A | 1 | 300 nA | 20 V | + 100 C | - 40 C | Chassis Mount | 90 W | Details | - | 2.821917 oz | Tube | Full Bridge | - | IGBT Silicon Modules | - | - | - | ||
| APTGT30H60T1G | |||||||||||||||||||||||||||
| | Mfr. ТипAPT60GT60JRAnlielectronics Тип | Atmel (Microchip Technology) |
IGBT Modules FG, IGBT, 600V, 60A, SOT-227View in Development Tools Selector
Сборник данных
Сравнение
| Min.:1 Mult.:1 | SOT-227-4 | 600 V | 2 V | 93 A | 1 | 100 nA | 20 V | + 150 C | - 55 C | Screw Mount | 378 W | - | - | - | Tube | Single | - | IGBT Silicon Modules | - | - | - | ||
| APT60GT60JR | |||||||||||||||||||||||||||
| | Mfr. ТипAPT60GT60JRDQ3Anlielectronics Тип | Atmel (Microchip Technology) |
IGBT Modules FG, IGBT-COMBI, 600V, 60A, SOT-227View in Development Tools Selector
Сборник данных
Сравнение
| Min.:1 Mult.:1 | SOT-227-4 | 600 V | 2 V | 105 A | 1 | 100 nA | 30 V | + 150 C | - 55 C | Screw Mount | 379 W | - | - | - | Tube | Single | - | IGBT Silicon Modules | - | - | - | ||
| APT60GT60JRDQ3 | |||||||||||||||||||||||||||
| | Mfr. ТипAPTGT35X120T3GAnlielectronics Тип | Atmel (Microchip Technology) |
IGBT Modules CC3074View in Development Tools Selector
Сборник данных
Сравнение
| Min.:1 Mult.:1 | SP3-32 | 1200 V | 1.7 V | 55 A | 1 | 400 nA | 20 V | + 100 C | - 40 C | Chassis Mount | 208 W | Details | - | - | Tube | 3-Phase Inverter | - | IGBT Silicon Modules | - | - | - | ||
| APTGT35X120T3G | |||||||||||||||||||||||||||
| | Mfr. ТипAPT60GT60JRDAnlielectronics Тип | Atmel (Microchip Technology) |
IGBT Modules FG, IGBT-COMBI, 600V, 60A, SOT-227View in Development Tools Selector
Сборник данных
Сравнение
| Min.:1 Mult.:1 | SOT-227-4 | 600 V | 2 V | 93 A | 1 | 100 nA | 20 V | + 150 C | - 55 C | Screw Mount | 378 W | - | - | 2 oz | Tube | Single | - | IGBT Silicon Modules | - | - | - | ||
| APT60GT60JRD |
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