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| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Surface Mount | Number of Terminals | Transistor Element Material | Ihs Manufacturer | Number of Elements | Operating Temperature-Max | Operating Temperature-Min | Package | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | RoHS | Rohs Code | Turn-off Time-Nom (toff) | Turn-on Time-Nom (ton) | ECCN Code | Additional Feature | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | JESD-30 Code | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | JEDEC-95 Code | Power Dissipation-Max (Abs) | Collector Current-Max (IC) | Collector-Emitter Voltage-Max | Gate-Emitter Voltage-Max | VCEsat-Max | Gate-Emitter Thr Voltage-Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr. ТипDGW75N65CTL1Anlielectronics Тип | Yangzhou Yangjie Electronics Co Ltd |
Insulated Gate Bipolar Transistor, 85A I(C), 650V V(BR)CES, N-Channel, TO-247AB,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | YANGZHOU YANGJIE ELECTRONICS CO LTD | 1 | 175 °C | -40 °C | - | PLASTIC/EPOXY | - | RECTANGULAR | FLANGE MOUNT | Active | - | Yes | 509 ns | 168 ns | EAR99 | - | SINGLE | THROUGH-HOLE | - | compliant | - | R-PSFM-T3 | SINGLE WITH BUILT-IN DIODE | - | POWER CONTROL | N-CHANNEL | TO-247AB | 395 W | 85 A | 650 V | 30 V | 1.95 V | 5.85 V | ||
| DGW75N65CTL1 | ||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMG100P12E2Anlielectronics Тип | Yangzhou Yangjie Electronics Co Ltd |
Insulated Gate Bipolar Transistor,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | YANGZHOU YANGJIE ELECTRONICS CO LTD | - | - | - | - | - | , | - | - | Active | - | Yes | - | - | EAR99 | - | - | - | - | compliant | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| MG100P12E2 | ||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMG35P12P3Anlielectronics Тип | Yangzhou Yangjie Electronics Co Ltd |
Insulated Gate Bipolar Transistor,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | YANGZHOU YANGJIE ELECTRONICS CO LTD | - | - | - | - | - | , | - | - | Active | - | Yes | - | - | EAR99 | - | - | - | - | compliant | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| MG35P12P3 | ||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипDGW25N120CTLAnlielectronics Тип | Yangzhou Yangjie Electronics Co Ltd |
Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, TO-247,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | YANGZHOU YANGJIE ELECTRONICS CO LTD | 1 | 175 °C | -40 °C | - | PLASTIC/EPOXY | - | RECTANGULAR | FLANGE MOUNT | Active | - | Yes | 414 ns | 190 ns | EAR99 | - | SINGLE | THROUGH-HOLE | - | compliant | - | R-PSFM-T3 | SINGLE WITH BUILT-IN DIODE | - | POWER CONTROL | N-CHANNEL | TO-247 | 326 W | 50 A | 1200 V | 30 V | 2.35 V | 6.4 V | ||
| DGW25N120CTL | ||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMG150HF12MRC2Anlielectronics Тип | Yangzhou Yangjie Electronics Co Ltd |
Description: Insulated Gate Bipolar Transistor, 210A I(C), 1200V V(BR)CES, N-Channel, MODULE-7
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 7 | SILICON | YANGZHOU YANGJIE ELECTRONICS CO LTD | 2 | 150 °C | 40 °C | - | UNSPECIFIED | FLANGE MOUNT, R-XUFM-X7 | RECTANGULAR | FLANGE MOUNT | Active | - | Yes | 530 ns | 250 ns | EAR99 | HIGH RELIABILITY | UPPER | UNSPECIFIED | NOT SPECIFIED | compliant | NOT SPECIFIED | R-XUFM-X7 | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | POWER CONTROL | N-CHANNEL | - | - | 210 A | 1200 V | - | - | - | ||
| MG150HF12MRC2 | ||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMG25P12P3Anlielectronics Тип | Yangzhou Yangjie Electronics Co Ltd |
Insulated Gate Bipolar Transistor,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | YANGZHOU YANGJIE ELECTRONICS CO LTD | - | - | - | - | - | , | - | - | Active | - | Yes | - | - | EAR99 | - | - | - | - | compliant | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| MG25P12P3 | ||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMG10P12P2Anlielectronics Тип | Yangzhou Yangjie Electronics Co Ltd |
Insulated Gate Bipolar Transistor,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | YANGZHOU YANGJIE ELECTRONICS CO LTD | - | - | - | - | - | , | - | - | Active | - | Yes | - | - | EAR99 | - | - | - | - | compliant | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| MG10P12P2 | ||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMG15P12P2Anlielectronics Тип | Yangzhou Yangjie Electronics Co Ltd |
Insulated Gate Bipolar Transistor,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | YANGZHOU YANGJIE ELECTRONICS CO LTD | - | - | - | - | - | , | - | - | Active | - | Yes | - | - | EAR99 | - | - | - | - | compliant | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| MG15P12P2 | ||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипMG300HF12MRC2Anlielectronics Тип | Yangzhou Yangjie Elec Tech |
IGBT Transistors / Modules ROHS
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | Box-packed | - | - | - | - | - | true | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| MG300HF12MRC2 | ||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMG75P12E2Anlielectronics Тип | Yangzhou Yangjie Elec Tech |
E2 IGBT Transistors / Modules ROHS
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | Box-packed | - | - | - | - | - | true | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| MG75P12E2 | ||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMG150HF12LEC2Anlielectronics Тип | Yangzhou Yangjie Elec Tech |
C2 IGBT Transistors / Modules ROHS
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | Box-packed | - | - | - | - | - | true | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| MG150HF12LEC2 | ||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMG10P12E1Anlielectronics Тип | Yangzhou Yangjie Elec Tech |
IGBT Transistors / Modules ROHS
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | Box-packed | - | - | - | - | - | true | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| MG10P12E1 | ||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипDGP15N65CTLAnlielectronics Тип | Yangzhou Yangjie Elec Tech |
TO-220 IGBT Transistors / Modules ROHS
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | Tube-packed | - | - | - | - | - | true | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| DGP15N65CTL | ||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипDGL75N120CTL1JAnlielectronics Тип | Yangzhou Yangjie Elec Tech |
TO-264 IGBT Transistors / Modules ROHS
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | Tube-packed | - | - | - | - | - | true | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| DGL75N120CTL1J | ||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMG50HF12TFC1Anlielectronics Тип | Yangzhou Yangjie Elec Tech |
C1 IGBT Transistors / Modules ROHS
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | Box-packed | - | - | - | - | - | true | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| MG50HF12TFC1 | ||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипDGW30N65CTLAnlielectronics Тип | Yangzhou Yangjie Elec Tech |
TO-247 IGBT Transistors / Modules ROHS
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | Tube-packed | - | - | - | - | - | true | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| DGW30N65CTL | ||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипDGW30N65CTHAnlielectronics Тип | Yangzhou Yangjie Elec Tech |
TO-247 IGBT Transistors / Modules ROHS
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | Tube-packed | - | - | - | - | - | true | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| DGW30N65CTH | ||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMG200HF12LEC2Anlielectronics Тип | Yangzhou Yangjie Elec Tech |
C2 IGBT Transistors / Modules ROHS
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | Box-packed | - | - | - | - | - | true | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| MG200HF12LEC2 | ||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMG15P12E1Anlielectronics Тип | Yangzhou Yangjie Elec Tech |
E1 IGBT Transistors / Modules ROHS
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | Box-packed | - | - | - | - | - | true | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| MG15P12E1 | ||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMG100HF12LEC1Anlielectronics Тип | Yangzhou Yangjie Electronics Co Ltd |
Insulated Gate Bipolar Transistor,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | YANGZHOU YANGJIE ELECTRONICS CO LTD | - | - | - | - | - | , | - | - | Active | - | Yes | - | - | EAR99 | - | - | - | - | compliant | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| MG100HF12LEC1 |
Индекс :
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