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Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Surface Mount | Number of Terminals | Transistor Element Material | Exterior Housing Material | Ihs Manufacturer | Moisture Sensitivity Levels | Number of Elements | Operating Temperature-Max | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Rohs Code | Turn-off Time-Nom (toff) | Turn-on Time-Nom (ton) | ECCN Code | Additional Feature | Terminal Position | Terminal Form | Reach Compliance Code | Pin Count | JESD-30 Code | Qualification Status | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | JEDEC-95 Code | Power Dissipation-Max (Abs) | Collector Current-Max (IC) | Collector-Emitter Voltage-Max | Gate-Emitter Voltage-Max | Gate-Emitter Thr Voltage-Max | Fall Time-Max (tf) |
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Mfr. ТипAP20GT60ASP-HFAnlielectronics Тип | Advanced Power Electronics Corp |
TRANSISTOR 33 A, 600 V, N-CHANNEL IGBT, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, TO-220, 3 PIN, Insulated Gate BIP Transistor
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | - | ADVANCED POWER ELECTRONICS CORP | - | 1 | - | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Contact Manufacturer | TO-220AB | - | 340 ns | 60 ns | EAR99 | - | SINGLE | THROUGH-HOLE | compliant | 3 | R-PSFM-T3 | - | SINGLE WITH BUILT-IN DIODE | - | POWER CONTROL | N-CHANNEL | TO-220AB | - | 33 A | 600 V | - | - | - | |||
AP20GT60ASP-HF | ||||||||||||||||||||||||||||||||||||||||||
Mfr. ТипAP40G120AWAnlielectronics Тип | Advanced Power Electronics Corp |
Description: TRANSISTOR 80 A, 1200 V, N-CHANNEL IGBT, ROHS COMPLIANT, TO-3P, 3 PIN, Insulated Gate BIP Transistor
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | - | ADVANCED POWER ELECTRONICS CORP | - | 1 | - | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Contact Manufacturer | TO-3P | - | 460 ns | 65 ns | EAR99 | - | SINGLE | THROUGH-HOLE | compliant | 2 | R-PSFM-T3 | - | SINGLE | COLLECTOR | - | N-CHANNEL | - | - | 80 A | 1200 V | - | - | - | |||
AP40G120AW | ||||||||||||||||||||||||||||||||||||||||||
Mfr. ТипAP20GT60P-HFAnlielectronics Тип | Advanced Power Electronics Corp |
TRANSISTOR 40 A, 600 V, N-CHANNEL IGBT, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, TO-220, 3 PIN, Insulated Gate BIP Transistor
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | - | ADVANCED POWER ELECTRONICS CORP | 1 | 1 | 150 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Contact Manufacturer | TO-220AB | Yes | 325 ns | 70 ns | EAR99 | - | SINGLE | THROUGH-HOLE | compliant | 3 | R-PSFM-T3 | - | SINGLE | - | POWER CONTROL | N-CHANNEL | TO-220AB | 104 W | 40 A | 600 V | 20 V | 7 V | 380 ns | |||
AP20GT60P-HF | ||||||||||||||||||||||||||||||||||||||||||
Mfr. ТипAPT25GP90BDF1Anlielectronics Тип | Advanced Power Technology |
Insulated Gate Bipolar Transistor, 72A I(C), 900V V(BR)CES, N-Channel, TO-247AD, TO-247, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | 1 | ADVANCED POWER TECHNOLOGY INC | - | - | - | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Obsolete | - | - | 190 ns | 29 ns | EAR99 | LOW CONDUCTION LOSS | SINGLE | THROUGH-HOLE | unknown | - | R-PSFM-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | COLLECTOR | POWER CONTROL | N-CHANNEL | TO-247AD | - | 72 A | 900 V | - | - | - | |||
APT25GP90BDF1 | ||||||||||||||||||||||||||||||||||||||||||
Mfr. ТипAP40G120WAnlielectronics Тип | Advanced Power Electronics Corp |
TRANSISTOR 80 A, 1200 V, N-CHANNEL IGBT, ROHS COMPLIANT, TO-3P, 3 PIN, Insulated Gate BIP Transistor
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | - | ADVANCED POWER ELECTRONICS CORP | - | 1 | - | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Contact Manufacturer | TO-3P | - | 410 ns | 65 ns | EAR99 | - | SINGLE | THROUGH-HOLE | compliant | 2 | R-PSFM-T3 | - | SINGLE | - | - | N-CHANNEL | - | - | 80 A | 1200 V | - | - | - | |||
AP40G120W |
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