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ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
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ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
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Изображение Тип Марка Объяснение Установленная цена Количество RoHS Surface Mount Number of Terminals Transistor Element Material Ihs Manufacturer Number of Elements Operating Temperature-Max Package Body Material Package Description Package Shape Package Style Part Life Cycle Code Turn-off Time-Nom (toff) Turn-on Time-Nom (ton) ECCN Code Terminal Position Terminal Form Reach Compliance Code JESD-30 Code Qualification Status Configuration Case Connection Transistor Application Polarity/Channel Type Power Dissipation-Max (Abs) Collector Current-Max (IC) Collector-Emitter Voltage-Max Gate-Emitter Voltage-Max VCEsat-Max
KYOCERA Corporation PDMB600E6
Mfr. Тип
PDMB600E6
Anlielectronics Тип

KYOCERA Corporation
Description: Insulated Gate Bipolar Transistor, 600A I(C), 600V V(BR)CES, N-Channel, MODULE-7
Сборник данных Сравнение
    Min.:1
    Mult.:1
    		 NO 7 SILICON KYOCERA CORP 2 150 °C UNSPECIFIED FLANGE MOUNT, R-XUFM-X7 RECTANGULAR FLANGE MOUNT Active 400 ns 300 ns EAR99 UPPER UNSPECIFIED unknown R-XUFM-X7 Not Qualified SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE ISOLATED - N-CHANNEL - 600 A 600 V - -
    PDMB600E6
    PDMB600E6

    KYOCERA Corporation
    RoHS :
    Инкапсуляция : -
    Есть складские запасы : -
    1 : -
    KYOCERA Corporation PDMB300E6
    Mfr. Тип
    PDMB300E6
    Anlielectronics Тип

    		KYOCERA Corporation
    Insulated Gate Bipolar Transistor, 300A I(C), 600V V(BR)CES, N-Channel, MODULE-7
    Сборник данных Сравнение
      Min.:1
      Mult.:1
      		 NO 7 SILICON KYOCERA CORP 2 150 °C UNSPECIFIED FLANGE MOUNT, R-XUFM-X7 RECTANGULAR FLANGE MOUNT Obsolete 400 ns 300 ns EAR99 UPPER UNSPECIFIED unknown R-XUFM-X7 Not Qualified SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE ISOLATED - N-CHANNEL - 300 A 600 V - -
      PDMB300E6
      PDMB300E6

      KYOCERA Corporation
      RoHS :
      Инкапсуляция : -
      Есть складские запасы : -
      1 : -
      KYOCERA Corporation PBMB200B12
      Mfr. Тип
      PBMB200B12
      Anlielectronics Тип

      		KYOCERA Corporation
      Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, MODULE-14
      Сборник данных Сравнение
        Min.:1
        Mult.:1
        		 NO 8 SILICON KYOCERA CORP 4 150 °C UNSPECIFIED FLANGE MOUNT, R-XUFM-X8 RECTANGULAR FLANGE MOUNT Active 800 ns 400 ns EAR99 UPPER UNSPECIFIED unknown R-XUFM-X8 Not Qualified BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE ISOLATED - N-CHANNEL 960 W 200 A 1200 V 20 V 2.4 V
        PBMB200B12
        PBMB200B12

        KYOCERA Corporation
        RoHS :
        Инкапсуляция : -
        Есть складские запасы : -
        1 : -
        KYOCERA Corporation PRHMB50B12
        Mfr. Тип
        PRHMB50B12
        Anlielectronics Тип

        		KYOCERA Corporation
        Description: Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, MODULE-5
        Сборник данных Сравнение
          Min.:1
          Mult.:1
          		 NO 5 SILICON KYOCERA CORP 1 150 °C UNSPECIFIED FLANGE MOUNT, R-XUFM-X5 RECTANGULAR FLANGE MOUNT Active 800 ns 400 ns EAR99 UPPER UNSPECIFIED unknown R-XUFM-X5 Not Qualified SINGLE WITH BUILT-IN DIODE ISOLATED POWER CONTROL N-CHANNEL 250 W 50 A 1200 V 20 V 2.4 V
          PRHMB50B12
          PRHMB50B12

          KYOCERA Corporation
          RoHS :
          Инкапсуляция : -
          Есть складские запасы : -
          1 : -
          KYOCERA Corporation PDMB200B12C2
          Mfr. Тип
          PDMB200B12C2
          Anlielectronics Тип

          		KYOCERA Corporation
          Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, MODULE-7
          Сборник данных Сравнение
            Min.:1
            Mult.:1
            		 NO 7 SILICON KYOCERA CORP 2 150 °C UNSPECIFIED MODULE-7 RECTANGULAR FLANGE MOUNT Active 800 ns 400 ns EAR99 UPPER UNSPECIFIED unknown R-XUFM-X7 Not Qualified SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE ISOLATED - N-CHANNEL 960 W 200 A 1200 V 20 V 2.4 V
            PDMB200B12C2
            PDMB200B12C2

            KYOCERA Corporation
            RoHS :
            Инкапсуляция : -
            Есть складские запасы : -
            1 : -
            KYOCERA Corporation PBMB150E6
            Mfr. Тип
            PBMB150E6
            Anlielectronics Тип

            		KYOCERA Corporation
            Insulated Gate Bipolar Transistor, 150A I(C), 600V V(BR)CES, N-Channel, MODULE-12
            Сборник данных Сравнение
              Min.:1
              Mult.:1
              		 NO 12 SILICON KYOCERA CORP 4 150 °C UNSPECIFIED FLANGE MOUNT, R-XUFM-X12 RECTANGULAR FLANGE MOUNT Active 350 ns 250 ns EAR99 UPPER UNSPECIFIED unknown R-XUFM-X12 Not Qualified BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE ISOLATED - N-CHANNEL - 150 A 600 V - -
              PBMB150E6
              PBMB150E6

              KYOCERA Corporation
              RoHS :
              Инкапсуляция : -
              Есть складские запасы : -
              1 : -
              KYOCERA Corporation PDMB75E6
              Mfr. Тип
              PDMB75E6
              Anlielectronics Тип

              		KYOCERA Corporation
              Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, MODULE-7
              Сборник данных Сравнение
                Min.:1
                Mult.:1
                		 NO 7 SILICON KYOCERA CORP 2 150 °C UNSPECIFIED FLANGE MOUNT, R-XUFM-X7 RECTANGULAR FLANGE MOUNT Active 350 ns 250 ns EAR99 UPPER UNSPECIFIED unknown R-XUFM-X7 Not Qualified SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE ISOLATED - N-CHANNEL - 75 A 600 V - -
                PDMB75E6
                PDMB75E6

                KYOCERA Corporation
                RoHS :
                Инкапсуляция : -
                Есть складские запасы : -
                1 : -
                KYOCERA Corporation PDMB50B12
                Mfr. Тип
                PDMB50B12
                Anlielectronics Тип

                		KYOCERA Corporation
                Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, MODULE-7
                Сборник данных Сравнение
                  Min.:1
                  Mult.:1
                  		 NO 7 SILICON KYOCERA CORP 2 150 °C UNSPECIFIED FLANGE MOUNT, R-XUFM-X7 RECTANGULAR FLANGE MOUNT Active 800 ns 400 ns EAR99 UPPER UNSPECIFIED unknown R-XUFM-X7 Not Qualified SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE ISOLATED - N-CHANNEL 250 W 50 A 1200 V 20 V 2.4 V
                  PDMB50B12
                  PDMB50B12

                  KYOCERA Corporation
                  RoHS :
                  Инкапсуляция : -
                  Есть складские запасы : -
                  1 : -
                  KYOCERA Corporation PBMB75B12
                  Mfr. Тип
                  PBMB75B12
                  Anlielectronics Тип

                  		KYOCERA Corporation
                  Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel,
                  Сборник данных Сравнение
                    Min.:1
                    Mult.:1
                    		 NO 12 SILICON KYOCERA CORP 4 150 °C UNSPECIFIED FLANGE MOUNT, R-XUFM-X12 RECTANGULAR FLANGE MOUNT Active 800 ns 400 ns EAR99 UPPER UNSPECIFIED unknown R-XUFM-X12 Not Qualified BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE ISOLATED - N-CHANNEL 400 W 75 A 1200 V 20 V 2.4 V
                    PBMB75B12
                    PBMB75B12

                    KYOCERA Corporation
                    RoHS :
                    Инкапсуляция : -
                    Есть складские запасы : -
                    1 : -
                    KYOCERA Corporation PBMB75E6
                    Mfr. Тип
                    PBMB75E6
                    Anlielectronics Тип

                    		KYOCERA Corporation
                    Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, MODULE-12
                    Сборник данных Сравнение
                      Min.:1
                      Mult.:1
                      		 NO 12 SILICON KYOCERA CORP 4 150 °C UNSPECIFIED FLANGE MOUNT, R-XUFM-X12 RECTANGULAR FLANGE MOUNT Active 350 ns 250 ns EAR99 UPPER UNSPECIFIED unknown R-XUFM-X12 Not Qualified BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE ISOLATED - N-CHANNEL - 75 A 600 V - -
                      PBMB75E6
                      PBMB75E6

                      KYOCERA Corporation
                      RoHS :
                      Инкапсуляция : -
                      Есть складские запасы : -
                      1 : -
                      KYOCERA Corporation PHMB400B12
                      Mfr. Тип
                      PHMB400B12
                      Anlielectronics Тип

                      		KYOCERA Corporation
                      Description: Insulated Gate Bipolar Transistor, 400A I(C), 1200V V(BR)CES, N-Channel,
                      Сборник данных Сравнение
                        Min.:1
                        Mult.:1
                        		 NO 4 SILICON KYOCERA CORP 1 150 °C UNSPECIFIED - RECTANGULAR FLANGE MOUNT Active 800 ns 400 ns EAR99 UPPER UNSPECIFIED unknown R-XUFM-X4 Not Qualified SINGLE WITH BUILT-IN DIODE ISOLATED - N-CHANNEL 1900 W 400 A 1200 V 20 V 2.4 V
                        PHMB400B12
                        PHMB400B12

                        KYOCERA Corporation
                        RoHS :
                        Инкапсуляция : -
                        Есть складские запасы : -
                        1 : -
                        KYOCERA Corporation PBMB150B12
                        Mfr. Тип
                        PBMB150B12
                        Anlielectronics Тип

                        		KYOCERA Corporation
                        Description: Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, MODULE-14
                        Сборник данных Сравнение
                          Min.:1
                          Mult.:1
                          		 NO 8 SILICON KYOCERA CORP 4 150 °C UNSPECIFIED FLANGE MOUNT, R-XUFM-X8 RECTANGULAR FLANGE MOUNT Active 800 ns 400 ns EAR99 UPPER UNSPECIFIED unknown R-XUFM-X8 Not Qualified BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE ISOLATED - N-CHANNEL 730 W 150 A 1200 V 20 V 2.4 V
                          PBMB150B12
                          PBMB150B12

                          KYOCERA Corporation
                          RoHS :
                          Инкапсуляция : -
                          Есть складские запасы : -
                          1 : -
                          KYOCERA Corporation PCHMB100B12
                          Mfr. Тип
                          PCHMB100B12
                          Anlielectronics Тип

                          		KYOCERA Corporation
                          Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, MODULE-5
                          Сборник данных Сравнение
                            Min.:1
                            Mult.:1
                            		 NO 5 SILICON KYOCERA CORP 1 150 °C UNSPECIFIED FLANGE MOUNT, R-XUFM-X5 RECTANGULAR FLANGE MOUNT Active 800 ns 400 ns EAR99 UPPER UNSPECIFIED unknown R-XUFM-X5 Not Qualified SINGLE WITH BUILT-IN DIODE ISOLATED POWER CONTROL N-CHANNEL 500 W 100 A 1200 V 20 V 2.4 V
                            PCHMB100B12
                            PCHMB100B12

                            KYOCERA Corporation
                            RoHS :
                            Инкапсуляция : -
                            Есть складские запасы : -
                            1 : -
                            KYOCERA Corporation PCHMB75B12
                            Mfr. Тип
                            PCHMB75B12
                            Anlielectronics Тип

                            		KYOCERA Corporation
                            Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel, MODULE-5
                            Сборник данных Сравнение
                              Min.:1
                              Mult.:1
                              		 NO 5 SILICON KYOCERA CORP 1 150 °C UNSPECIFIED FLANGE MOUNT, R-XUFM-X5 RECTANGULAR FLANGE MOUNT Active 800 ns 400 ns EAR99 UPPER UNSPECIFIED unknown R-XUFM-X5 Not Qualified SINGLE WITH BUILT-IN DIODE ISOLATED POWER CONTROL N-CHANNEL 400 W 75 A 1200 V 20 V 2.4 V
                              PCHMB75B12
                              PCHMB75B12

                              KYOCERA Corporation
                              RoHS :
                              Инкапсуляция : -
                              Есть складские запасы : -
                              1 : -
                              KYOCERA Corporation PDMB150B12C2
                              Mfr. Тип
                              PDMB150B12C2
                              Anlielectronics Тип

                              		KYOCERA Corporation
                              Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, MODULE-7
                              Сборник данных Сравнение
                                Min.:1
                                Mult.:1
                                		 NO 7 SILICON KYOCERA CORP 2 150 °C UNSPECIFIED MODULE-7 RECTANGULAR FLANGE MOUNT Active 800 ns 400 ns EAR99 UPPER UNSPECIFIED unknown R-XUFM-X7 Not Qualified SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE ISOLATED - N-CHANNEL 730 W 150 A 1200 V 20 V 2.4 V
                                PDMB150B12C2
                                PDMB150B12C2

                                KYOCERA Corporation
                                RoHS :
                                Инкапсуляция : -
                                Есть складские запасы : -
                                1 : -
                                KYOCERA Corporation PRHMB400B12
                                Mfr. Тип
                                PRHMB400B12
                                Anlielectronics Тип

                                		KYOCERA Corporation
                                Insulated Gate Bipolar Transistor, 400A I(C), 1200V V(BR)CES, N-Channel, MODULE-5
                                Сборник данных Сравнение
                                  Min.:1
                                  Mult.:1
                                  		 NO 5 SILICON KYOCERA CORP 1 150 °C UNSPECIFIED MODULE-5 RECTANGULAR FLANGE MOUNT Active 800 ns 400 ns EAR99 UPPER UNSPECIFIED unknown R-XUFM-X5 Not Qualified SINGLE WITH BUILT-IN DIODE ISOLATED POWER CONTROL N-CHANNEL 1900 W 400 A 1200 V 20 V 2.4 V
                                  PRHMB400B12
                                  PRHMB400B12

                                  KYOCERA Corporation
                                  RoHS :
                                  Инкапсуляция : -
                                  Есть складские запасы : -
                                  1 : -
                                  KYOCERA Corporation PDMB200B12C
                                  Mfr. Тип
                                  PDMB200B12C
                                  Anlielectronics Тип

                                  		KYOCERA Corporation
                                  Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, MODULE-7
                                  Сборник данных Сравнение
                                    Min.:1
                                    Mult.:1
                                    		 NO 7 SILICON KYOCERA CORP 2 150 °C UNSPECIFIED MODULE-7 RECTANGULAR FLANGE MOUNT Active 800 ns 400 ns EAR99 UPPER UNSPECIFIED unknown R-XUFM-X7 Not Qualified SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE ISOLATED - N-CHANNEL 960 W 200 A 1200 V 20 V 2.4 V
                                    PDMB200B12C
                                    PDMB200B12C

                                    KYOCERA Corporation
                                    RoHS :
                                    Инкапсуляция : -
                                    Есть складские запасы : -
                                    1 : -
                                    KYOCERA Corporation PDMB75B12
                                    Mfr. Тип
                                    PDMB75B12
                                    Anlielectronics Тип

                                    		KYOCERA Corporation
                                    Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel, MODULE-7
                                    Сборник данных Сравнение
                                      Min.:1
                                      Mult.:1
                                      		 NO 7 SILICON KYOCERA CORP 2 150 °C UNSPECIFIED MODULE-7 RECTANGULAR FLANGE MOUNT Active 800 ns 400 ns EAR99 UPPER UNSPECIFIED unknown R-XUFM-X7 Not Qualified SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE ISOLATED - N-CHANNEL 400 W 75 A 1200 V 20 V 2.4 V
                                      PDMB75B12
                                      PDMB75B12

                                      KYOCERA Corporation
                                      RoHS :
                                      Инкапсуляция : -
                                      Есть складские запасы : -
                                      1 : -
                                      KYOCERA Corporation PDMB150E6C
                                      Mfr. Тип
                                      PDMB150E6C
                                      Anlielectronics Тип

                                      		KYOCERA Corporation
                                      Insulated Gate Bipolar Transistor, 150A I(C), 600V V(BR)CES, N-Channel, MODULE-7
                                      Сборник данных Сравнение
                                        Min.:1
                                        Mult.:1
                                        		 NO 7 SILICON KYOCERA CORP 2 150 °C UNSPECIFIED FLANGE MOUNT, R-XUFM-X7 RECTANGULAR FLANGE MOUNT Active 350 ns 250 ns EAR99 UPPER UNSPECIFIED unknown R-XUFM-X7 Not Qualified SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE ISOLATED - N-CHANNEL - 150 A 600 V - -
                                        PDMB150E6C
                                        PDMB150E6C

                                        KYOCERA Corporation
                                        RoHS :
                                        Инкапсуляция : -
                                        Есть складские запасы : -
                                        1 : -
                                        KYOCERA Corporation PHMB1200B12
                                        Mfr. Тип
                                        PHMB1200B12
                                        Anlielectronics Тип

                                        		KYOCERA Corporation
                                        Insulated Gate Bipolar Transistor
                                        Сборник данных Сравнение
                                          Min.:1
                                          Mult.:1
                                          		 - - - KYOCERA CORP - - - , - - Active - - EAR99 - - unknown - - - - - - - - - - -
                                          PHMB1200B12
                                          PHMB1200B12

                                          KYOCERA Corporation
                                          RoHS :
                                          Инкапсуляция : -
                                          Есть складские запасы : -
                                          1 : -

                                          Discrete Semiconductor Products

                                          Transistors - IGBTs - Single definition: An IGBT(Insulated-Gate Bipolar Transistor) is a three-terminal power semiconductor device primarily used as an electronic switch. It consist... Transistors - IGBTs - Single Product Listing: PDMB600E6,PDMB300E6,PBMB200B12,PRHMB50B12,PDMB200B12C2.Discrete Semiconductor Products type:Diodes - Zener - Single(113610),Diodes - Rectifiers - Single(97769),Transistors - FETs, MOSFETs - Single(61202),Transistors - Bipolar (BJT) - Single(34518),Diodes - Rectifiers - Arrays(17034) .Transistors - IGBTs - Single has 46 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Anli.