Transistors - IGBTs - Single Products For Sale - PDF - Discrete Semiconductor Products

Изображение	Тип	Марка	Объяснение	Количество	Mounting Type	Package / Case	Supplier Device Package	Base Product Number	Brand	Collector- Emitter Voltage VCEO Max	Continuous Collector Current Ic Max	Current-Collector (Ic) (Max)	Factory Pack QuantityFactory Pack Quantity	Manufacturer	Maximum Gate Emitter Voltage	Maximum Operating Temperature	Mfr	Minimum Operating Temperature	Mounting Styles	Package	Pd - Power Dissipation	Product Status	Qualification	RoHS	Test Conditions	Unit Weight	Operating Temperature	Packaging	Series	Part Status	Subcategory	Technology	Configuration	Input Type	Power - Max	Product Type	Operating Temperature Range	Voltage - Collector Emitter Breakdown (Max)	Vce(on) (Max) @ Vge, Ic	Continuous Collector Current	IGBT Type	Gate Charge	Current - Collector Pulsed (Icm)	Td (on/off) @ 25°C	Switching Energy	Reverse Recovery Time (trr)	Product Category	Grade	Height	Length	Width
	Mfr. Тип MIW25N120FA-BP Anlielectronics Тип	Micro Commercial Co	IGBT 1200V 25A,TO-247AB Сборник данных Сравнение	Min.:1 Mult.:1	Through Hole	TO-247-3	TO-247AB	MIW25N120	Micro Commercial Components (MCC)	1.2 kV	-	50 A	1800	Micro Commercial Components (MCC)	- 20 V, + 20 V	+ 175 C	Micro Commercial Co	- 40 C	Through Hole	Tube	326 W	Active	-	Details	600V, 25A, 18Ohm, 15V	-	-40°C ~ 175°C (TJ)	-	-	-	IGBTs	Si	Single	Standard	326 W	IGBT Transistors	-	1200 V	2.35V @ 15V, 25A	25 A	Trench Field Stop	200 nC	100 A	158ns/331ns	1.8mJ (on), 1.4mJ (off)	-	IGBT Transistors	-	-	-	-
MIW25N120FA-BP Micro Commercial Co RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип MIW15N120FA-BP Anlielectronics Тип	Micro Commercial Co	IGBT 1200V 15A,TO-247AB Сборник данных Сравнение	Min.:1 Mult.:1	Through Hole	TO-247-3	TO-247AB	MIW15N120	Micro Commercial Components (MCC)	1.2 kV	-	30 A	1800	Micro Commercial Components (MCC)	- 20 V, + 20 V	+ 175 C	Micro Commercial Co	- 40 C	Through Hole	Tube	200 W	Active	-	Details	600V, 15A, 33Ohm, 15V	-	-40°C ~ 175°C (TJ)	-	-	-	IGBTs	Si	Single	Standard	200 W	IGBT Transistors	-	1200 V	2.35V @ 15V, 15A	15 A	Trench Field Stop	140 nC	60 A	45ns/128ns	2.2mJ (on), 1.3mJ (off)	-	IGBT Transistors	-	-	-	-
MIW15N120FA-BP Micro Commercial Co RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип MIW30N65FA-BP Anlielectronics Тип	Micro Commercial Co	IGBT 650V 30A,TO-247AB Сборник данных Сравнение	Min.:1 Mult.:1	Through Hole	TO-247-3	TO-247AB	MIW30N65	Micro Commercial Components (MCC)	650 V	-	60 A	1800	Micro Commercial Components (MCC)	- 20 V, + 20 V	+ 175 C	Micro Commercial Co	- 40 C	Through Hole	Tube	187 W	Active	-	Details	300V, 30A, 33Ohm, 15V	-	-40°C ~ 175°C (TJ)	-	-	-	IGBTs	Si	Single	Standard	187 W	IGBT Transistors	-	650 V	2.4V @ 15V, 30A	30 A	Trench Field Stop	150 nC	120 A	37ns/113ns	870μJ (on), 260μJ (off)	-	IGBT Transistors	-	-	-	-
MIW30N65FA-BP Micro Commercial Co RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип MIW40N120FLA-BP Anlielectronics Тип	Micro Commercial Co	IGBT 1200V 40A,TO-247AB Сборник данных Сравнение	Min.:1 Mult.:1	Through Hole	TO-247-3	TO-247AB	MIW40	Micro Commercial Components (MCC)	1.2 kV	-	80 A	1800	Micro Commercial Components (MCC)	- 20 V, + 20 V	+ 175 C	Micro Commercial Co	- 40 C	Through Hole	Tube	428 W	Active	-	Details	600V, 40A, 12Ohm, 15V	-	-40°C ~ 175°C (TJ)	-	-	-	IGBTs	Si	Single	Standard	428 W	IGBT Transistors	-	1200 V	2.3V @ 15V, 40A	40 A	Trench Field Stop	330 nC	160 A	45ns/180ns	3.8mJ (on), 1.7mJ (off)	-	IGBT Transistors	-	-	-	-
MIW40N120FLA-BP Micro Commercial Co RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип MIW50N65F-BP Anlielectronics Тип	Micro Commercial Co	IGBT 650V 40A TO-247 Сборник данных Сравнение	Min.:1 Mult.:1	Through Hole	TO-247-3	TO-247AB	MIW50N65	Micro Commercial Components (MCC)	650 V	-	85 A	1800	Micro Commercial Components (MCC)	- 30 V, + 30 V	+ 175 C	Micro Commercial Co	- 40 C	Through Hole	Tube	326 W	Active	-	Details	300V, 50A, 10Ohm, 15V	-	-40°C ~ 175°C (TJ)	Bulk	-	-	IGBTs	Si	Single	Standard	326 W	IGBT Transistors	-	650 V	1.95V @ 15V, 50A	50 A	Trench Field Stop	450 nC	200 A	55ns/319ns	1.27mJ (on), 650μJ (off)	-	IGBT Transistors	-	-	-	-
MIW50N65F-BP Micro Commercial Co RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип MIW40N65-BP Anlielectronics Тип	Micro Commercial Co	IGBT 650V 40A TO-247 Сборник данных Сравнение	Min.:1 Mult.:1	Through Hole	TO-247-3	TO-247-3	MIW40	-	-	-	80 A	-	-	-	-	Micro Commercial Co	-	-	Tube	-	Last Time Buy	-	-	600V, 40A, 10Ohm, 15V	-	-55°C ~ 150°C (TJ)	-	-	-	-	-	-	Standard	280 W	-	-	650 V	2.4V @ 15V, 40A	-	Trench Field Stop	165 nC	120 A	62ns/265ns	3.3mJ (on), 1.4mJ (off)	41 ns	-	-	-	-	-
MIW40N65-BP Micro Commercial Co RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип MIW40N120-BP Anlielectronics Тип	Micro Commercial Co	IGBT 1200V 40A TO-247 Сборник данных Сравнение	Min.:1 Mult.:1	Through Hole	TO-247-3	TO-247-3	MIW40	Micro Commercial Components (MCC)	1.2 kV	80 A	80 A	1800	Micro Commercial Components (MCC)	- 20 V, + 20 V	+ 150 C	Micro Commercial Co	- 55 C	Through Hole	Tube	277 W	Active	-	Details	600V, 40A, 10Ohm, 15V	0.197534 oz	-55°C ~ 150°C (TJ)	-	-	-	IGBTs	Si	Single	Standard	277 W	IGBT Transistors	- 55 C to + 150 C	1200 V	2.4V @ 15V, 40A	40 A	Trench Field Stop	239 nC	160 A	62ns/265ns	3.3mJ (on), 1.4mJ (off)	80 ns	IGBT Transistors	-	22 mm	16.2 mm	5.3 mm
MIW40N120-BP Micro Commercial Co RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип MIW50N65H-BP Anlielectronics Тип	Micro Commercial Co	IGBT Сборник данных Сравнение	Min.:1 Mult.:1	Through Hole	TO-247-3	TO-247-3	MIW50N65	-	-	-	80 A	-	-	-	-	Micro Commercial Co	-	-	Bulk	-	Last Time Buy	-	-	400V, 50A, 10Ohm, 15V	-	-55°C ~ 175°C (TJ)	-	-	-	-	-	-	Standard	250 W	-	-	650 V	1.9V @ 15V, 50A	-	Trench Field Stop	186 nC	200 A	69ns/404ns	1.59mJ (on), 1.34mJ (off)	88 ns	-	-	-	-	-
MIW50N65H-BP Micro Commercial Co RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип MIW40N120F-BP Anlielectronics Тип	Micro Commercial Components (MCC)	IGBT Transistors IGBT 1200V 40A TO-247 Сборник данных Сравнение	Min.:1 Mult.:1	Through Hole	TO-247-3	TO-247-3	MIW40	-	1.2 kV	-	80 A	1800	-	- 30 V, + 30 V	+ 150 C	Micro Commercial Co	- 55 C	Through Hole	Bulk	277 W	Active	-	-	600V, 40A, 10Ohm, 15V	0.197534 oz	-55°C ~ 150°C (TJ)	Bulk	MIW	-	-	-	Single	Standard	277 W	-	-	1200 V	2.2V @ 15V, 40A	40 A	Trench Field Stop	240 nC	160 A	160ns/237ns	5.02mJ (on), 2.72mJ (off)	367 ns	-	-	-	-	-
MIW40N120F-BP Micro Commercial Components (MCC) RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип MIWP75N120-BP Anlielectronics Тип	Micro Commercial Components (MCC)	IGBT Transistors IGBT 1200V 40A TO-247 Сборник данных Сравнение	Min.:1 Mult.:1	Through Hole	TO-247P-3	TO-247-3	MIWP75	-	1.2 kV	-	150 A	1800	-	- 30 V, + 30 V	+ 175 C	Micro Commercial Co	- 55 C	Through Hole	Bulk	789 W	Active	-	-	600V, 75A, 10Ohm, 15V	0.197534 oz	-55°C ~ 175°C (TJ)	Bulk	MIW	-	-	-	Single	Standard	789 W	-	-	1200 V	2.3V @ 15V, 75A	75 A	Trench Field Stop	622 nC	300 A	112ns/478ns	11.3mJ (on), 4.7mJ (off)	293 ns	-	-	-	-	-
MIWP75N120-BP Micro Commercial Components (MCC) RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип MIW30N65FLA-BP Anlielectronics Тип	Micro Commercial Co	IGBT 650V 30A,TO-247AB Сборник данных Сравнение	Min.:1 Mult.:1	Through Hole	TO-247-3	TO-247AB	MIW30N65	Micro Commercial Components (MCC)	650 V	-	60 A	1800	Micro Commercial Components (MCC)	- 20 V, + 20 V	+ 175 C	Micro Commercial Co	- 40 C	Through Hole	Tube	187 W	Active	-	Details	300V, 30A, 33Ohm, 15V	-	-40°C ~ 175°C (TJ)	-	-	-	IGBTs	Si	Single	Standard	187 W	IGBT Transistors	-	650 V	2.1V @ 15V, 30A	30 A	Trench Field Stop	150 nC	120 A	40ns/120ns	920μJ (on), 450μJ (off)	-	IGBT Transistors	-	-	-	-
MIW30N65FLA-BP Micro Commercial Co RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип MIW40N65RA-BP Anlielectronics Тип	Micro Commercial Co	IGBT 650V 40A,TO-247AB Сборник данных Сравнение	Min.:1 Mult.:1	Through Hole	TO-247-3	TO-247AB	MIW40	Micro Commercial Components (MCC)	-	-	80 A	1800	Micro Commercial Components (MCC)	- 20 V, 20 V	-	Micro Commercial Co	-	-	Tube	-	Active	-	Details	400V, 40A, 10Ohm, 15V	-	-40°C ~ 175°C (TJ)	-	-	-	-	-	-	Standard	306 W	-	-	650 V	2.4V @ 15V, 40A	-	Trench Field Stop	160 nC	160 A	12ns/124ns	1.5mJ (on), 590μJ (off)	-	MCC	-	-	-	-
MIW40N65RA-BP Micro Commercial Co RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип MIW75N65F-BP Anlielectronics Тип	Micro Commercial Components	Interface Сборник данных Сравнение	Min.:1 Mult.:1	Through Hole	TO-247-3	TO-247-3	MIW75	-	650 V	-	75 A	-	-	- 30 V, 30 V	+ 175 C	Micro Commercial Co	- 40 C	Through Hole	Bulk	395 W	Active	-	-	400V, 75A, 8Ohm, 15V	-	-40°C ~ 175°C (TJ)	-	-	-	-	Si	Single	Standard	395 W	-	-	650 V	1.95V @ 15V, 75A	-	Trench Field Stop	130 nC	300 A	34ns/183ns	2.64mJ (on), 920µJ (off)	-	-	-	-	-	-
MIW75N65F-BP Micro Commercial Components RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип MIS80N120NT1YHE3-BP Anlielectronics Тип	Micro Commercial Co	IGBT 1200V 80A STO-220 Сборник данных Сравнение	Min.:1 Mult.:1	Through Hole	TO-273AA	-	-	-	-	-	145 A	-	-	-	-	-	-	-	-	-	-	AEC-Q101	-	600V, 80A, 10Ohm, 15V	-	-40°C ~ 150°C (TJ)	Bulk	-	Active	-	-	-	Standard	735 W	-	-	1200 V	2.3V @ 15V, 80A	-	Trench Field Stop	650 nC	240 A	33ns/231ns	7.5mJ (on), 4.6mJ (off)	-	-	Automotive	-	-	-
MIS80N120NT1YHE3-BP Micro Commercial Co RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -

Discrete Semiconductor Products

Transistors - IGBTs - Single definition: An IGBT(Insulated-Gate Bipolar Transistor) is a three-terminal power semiconductor device primarily used as an electronic switch. It consist... Transistors - IGBTs - Single Product Listing: MIW25N120FA-BP,MIW15N120FA-BP,MIW30N65FA-BP,MIW40N120FLA-BP,MIW50N65F-BP.Discrete Semiconductor Products type:Diodes - Zener - Single(113610),Diodes - Rectifiers - Single(97769),Transistors - FETs, MOSFETs - Single(61202),Transistors - Bipolar (BJT) - Single(34518),Diodes - Rectifiers - Arrays(17034) .Transistors - IGBTs - Single has 14 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Anli.

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