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| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Package / Case | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Continuous Collector Current Ic Max | Factory Pack QuantityFactory Pack Quantity | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | Maximum Operating Temperature | Minimum Operating Temperature | Mounting Styles | Pd - Power Dissipation | RoHS | Tradename | Unit Weight | Packaging | Configuration | Operating Temperature Range | Continuous Collector Current | Height | Length | Width |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr. ТипAPT80GA90BAnlielectronics Тип | Atmel (Microchip Technology) |
IGBT Transistors FG, IGBT, 900V, TO-247View in Development Tools Selector
Сборник данных
Сравнение
| Min.:1 Mult.:1 | TO-247-3 | 900 V | 2.5 V | 145 A | - | 1 | - | - 30 V, + 30 V | + 150 C | - 55 C | Through Hole | 625 W | Details | - | 1.340411 oz | Tube | Single | - | - | - | - | - | ||
| APT80GA90B | ||||||||||||||||||||||||||||
| | Mfr. ТипAPT25GP90BDQ1GAnlielectronics Тип | Atmel (Microchip Technology) |
IGBT Transistors FG, IGBT-COMBI, 900V, TO-247, RoHSView in Development Tools Selector
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | 900 V | 3.2 V | 72 A | - | 1 | - | - 30 V, + 30 V | + 150 C | - 55 C | Through Hole | 417 W | Details | - | - | Tube | Single | - | - | - | - | - | ||
| APT25GP90BDQ1G | ||||||||||||||||||||||||||||
| | Mfr. ТипAPT30GP60BDQ1GAnlielectronics Тип | Atmel (Microchip Technology) |
IGBT Transistors FG, IGBT, 600V, 30A, TO-247, RoHSView in Development Tools Selector
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | 600 V | 2.2 V | 100 A | - | 1 | - | - 20 V, + 20 V | + 150 C | - 55 C | Through Hole | 463 W | Details | - | 0.208116 oz | Tube | Single | - | - | - | - | - | ||
| APT30GP60BDQ1G | ||||||||||||||||||||||||||||
| | Mfr. ТипAPT25GP120BDQ1GAnlielectronics Тип | Atmel (Microchip Technology) |
IGBT Transistors FG, IGBT, 1200V, TO-247, RoHSView in Development Tools Selector
Сборник данных
Сравнение
| Min.:1 Mult.:1 | TO-247-3 | 1.2 kV | 3.3 V | 69 A | 69 A | 1 | 100 nA | - 20 V, + 20 V | + 150 C | - 55 C | Through Hole | 417 W | Details | - | 1.340411 oz | Tube | Single | - 55 C to + 150 C | 69 A | 5.31 mm | 21.46 mm | 16.26 mm | ||
| APT25GP120BDQ1G | ||||||||||||||||||||||||||||
| | Mfr. ТипAPT35GN120L2DQ2GAnlielectronics Тип | Atmel (Microchip Technology) |
IGBT Transistors FG, IGBT-COMBI, 1200V, TO-264 MAX, RoHSView in Development Tools Selector
Сборник данных
Сравнение
| Min.:1 Mult.:1 | TO-264MAX-3 | 1.2 kV | 1.7 V | 94 A | 94 A | 1 | 600 nA | - 30 V, + 30 V | + 150 C | - 55 C | Through Hole | 379 W | Details | - | 0.373904 oz | Tube | Single | - 55 C to + 150 C | 94 A | 5.21 mm | 26.49 mm | 20.5 mm | ||
| APT35GN120L2DQ2G | ||||||||||||||||||||||||||||
| | Mfr. ТипAPT80GA90LD40Anlielectronics Тип | Atmel (Microchip Technology) |
IGBT Transistors FG, IGBT-COMBI, 900V, TO-264View in Development Tools Selector
Сборник данных
Сравнение
| Min.:1 Mult.:1 | TO-247-3 | 900 V | 2.5 V | 145 A | - | 1 | - | - 30 V, + 30 V | + 150 C | - 55 C | Through Hole | 625 W | Details | - | 1.340411 oz | Tube | Single | - | - | - | - | - | ||
| APT80GA90LD40 | ||||||||||||||||||||||||||||
| | Mfr. ТипAPT75GP120B2GAnlielectronics Тип | Atmel (Microchip Technology) |
IGBT Transistors FG, IGBT, 1200V, TO-247 T-MAX, RoHSView in Development Tools Selector
Сборник данных
Сравнение
| Min.:1 Mult.:1 | T-Max-3 | 1.2 kV | 3.3 V | 100 A | 100 A | 1 | 100 nA | - 30 V, + 30 V | + 150 C | - 55 C | Through Hole | 1.042 kW | Details | POWER MOS 7 IGBT | 0.580821 oz | Tube | Single | - 55 C to + 150 C | 100 A | 5.31 mm | 21.46 mm | 16.26 mm | ||
| APT75GP120B2G | ||||||||||||||||||||||||||||
| | Mfr. ТипAPT33GF120LRDQ2GAnlielectronics Тип | Atmel (Microchip Technology) |
IGBT Transistors IGBT NPT Low Frequency Combi 1200 V 33 A TO-264View in Development Tools Selector
Сборник данных
Сравнение
| Min.:1 Mult.:1 | TO-264-3 | 1.2 kV | - | 64 A | - | 1 | 120 nA | - 20 V, + 20 V | + 150 C | - 55 C | Through Hole | 357 W | Details | - | - | Tube | Single | - | - | - | - | - | ||
| APT33GF120LRDQ2G | ||||||||||||||||||||||||||||
| | Mfr. ТипAPT43GA90BD30Anlielectronics Тип | Atmel (Microchip Technology) |
IGBT Transistors FG, IGBT-COMBI, 900V, TO-247View in Development Tools Selector
Сборник данных
Сравнение
| Min.:1 Mult.:1 | TO-247-3 | 900 V | 2.5 V | 78 A | 78 A | 1 | 100 nA | - 30 V, + 30 V | + 150 C | - 55 C | Through Hole | 337 W | Details | - | 1.340411 oz | Tube | Single | - 55 C to + 150 C | 78 A | 5.31 mm | 21.46 mm | 16.26 mm | ||
| APT43GA90BD30 | ||||||||||||||||||||||||||||
| | Mfr. ТипAPT36GA60BD15Anlielectronics Тип | Atmel (Microchip Technology) |
IGBT Transistors FG, IGBT-COMBI, 600V, TO-247View in Development Tools Selector
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | 600 V | 2 V | 65 A | - | 1 | - | - 30 V, + 30 V | + 150 C | - 55 C | Through Hole | 290 W | Details | - | - | Tube | Single | - | - | - | - | - | ||
| APT36GA60BD15 | ||||||||||||||||||||||||||||
| | Mfr. ТипAPT50GT120JRDQ2Anlielectronics Тип | Atmel (Microchip Technology) |
IGBT Transistors IGBT NPT Medium Frequency Combi 1200 V 50 A ISOTOPView in Development Tools Selector
Сборник данных
Сравнение
| Min.:1 Mult.:1 | SOT-227-4 | 1.2 kV | - | 72 A | - | 1 | 300 nA | - 20 V, + 20 V | + 150 C | - 55 C | Screw Mount | 379 W | Details | - | - | Tube | Single | - | - | - | - | - | ||
| APT50GT120JRDQ2 | ||||||||||||||||||||||||||||
| | Mfr. ТипAPT30GS60BRDQ2GAnlielectronics Тип | Atmel (Microchip Technology) |
IGBT Transistors FG, IGBT-COMBI, 600V, TO-247, RoHSView in Development Tools Selector
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | 600 V | 2.8 V | 54 A | - | 1 | - | - 30 V, + 30 V | + 150 C | - 55 C | Through Hole | 250 W | Details | - | 0.208116 oz | Tube | Single | - | - | - | - | - | ||
| APT30GS60BRDQ2G | ||||||||||||||||||||||||||||
| | Mfr. ТипAPT20GN60SDQ2GAnlielectronics Тип | Atmel (Microchip Technology) |
IGBT Transistors IGBT Fieldstop Low Frequency Combi 600 V 20 A TO-268View in Development Tools Selector
Сборник данных
Сравнение
| Min.:1 Mult.:1 | D3PAK-3 | 600 V | - | 40 A | - | 1 | 300 nA | - 20 V, + 20 V | + 175 C | - 55 C | SMD/SMT | 136 W | Details | - | - | Tube | Single | - | - | - | - | - | ||
| APT20GN60SDQ2G | ||||||||||||||||||||||||||||
| | Mfr. ТипAPT15GT120BRDQ1GAnlielectronics Тип | Atmel (Microchip Technology) |
IGBT Transistors FG, IGBT, 1200V, 15A, TO-247, RoHSView in Development Tools Selector
Сборник данных
Сравнение
| Min.:1 Mult.:1 | TO-247-3 | 1.2 kV | 3 V | 36 A | 36 A | 1 | 480 nA | - 30 V, + 30 V | + 150 C | - 55 C | Through Hole | 250 W | Details | Thunderbolt IGBT | 1.340411 oz | Tube | Single | - 55 C to + 150 C | 36 A | 5.31 mm | 21.46 mm | 16.26 mm | ||
| APT15GT120BRDQ1G | ||||||||||||||||||||||||||||
| | Mfr. ТипAPT75GN60SDQ2GAnlielectronics Тип | Atmel (Microchip Technology) |
IGBT Transistors IGBT Fieldstop Low Frequency Combi 600 V 75 A TO-268View in Development Tools Selector
Сборник данных
Сравнение
| Min.:1 Mult.:1 | D3PAK-3 | 600 V | 1.45 V | 155 A | - | 1 | 600 nA | - 30 V, + 30 V | + 175 C | - 55 C | SMD/SMT | 536 W | Details | - | - | Tube | Single | - | - | - | - | - | ||
| APT75GN60SDQ2G | ||||||||||||||||||||||||||||
| | Mfr. ТипAPT35GP120B2D2GAnlielectronics Тип | Atmel (Microchip Technology) |
IGBT Transistors IGBT PT MOS 7 Combi 1200 V 35 A TO-247 MAXView in Development Tools Selector
Сборник данных
Сравнение
| Min.:1 Mult.:1 | TO-247-3 | 1.2 kV | - | 96 A | - | 1 | 100 nA | - 20 V, + 20 V | + 150 C | - 55 C | Through Hole | 543 W | Details | - | - | Tube | Single | - | - | - | - | - | ||
| APT35GP120B2D2G | ||||||||||||||||||||||||||||
| | Mfr. ТипAPT50GN60BDQ3GAnlielectronics Тип | Atmel (Microchip Technology) |
IGBT Transistors IGBT Fieldstop Low Frequency Combi 600 V 50 A TO-247View in Development Tools Selector
Сборник данных
Сравнение
| Min.:1 Mult.:1 | TO-247-3 | 600 V | 1.45 V | 107 A | - | 1 | 600 nA | - 30 V, + 30 V | + 175 C | - 55 C | Through Hole | 366 W | Details | - | - | Tube | Single | - | - | - | - | - | ||
| APT50GN60BDQ3G | ||||||||||||||||||||||||||||
| | Mfr. ТипAPT65GP60L2DQ2GAnlielectronics Тип | Atmel (Microchip Technology) |
IGBT Transistors IGBT PT MOS 7 Combi 600 V 65 A TO-264 MAXView in Development Tools Selector
Сборник данных
Сравнение
| Min.:1 Mult.:1 | TO-247-3 | - | - | - | - | 1 | - | - | - | - | Through Hole | - | - | - | 1.340411 oz | Tube | - | - | - | - | - | - | ||
| APT65GP60L2DQ2G | ||||||||||||||||||||||||||||
| | Mfr. ТипAPT30GT60BRDGAnlielectronics Тип | Atmel (Microchip Technology) |
IGBT Transistors FG, IGBT-COMBI, 600V, 30A, TO-247, RoHSView in Development Tools Selector
Сборник данных
Сравнение
| Min.:1 Mult.:1 | TO-247-3 | 600 V | 2 V | 64 A | - | 1 | - | - 30 V, + 30 V | + 150 C | - 55 C | Through Hole | 250 W | - | - | - | Tube | Single | - | - | - | - | - | ||
| APT30GT60BRDG |
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