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| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Surface Mount | Number of Terminals | Transistor Element Material | Ihs Manufacturer | Number of Elements | Operating Temperature-Max | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Rohs Code | Turn-off Time-Nom (toff) | Turn-on Time-Nom (ton) | Pbfree Code | ECCN Code | Additional Feature | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Qualification Status | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Collector Current-Max (IC) | Collector-Emitter Voltage-Max | Gate-Emitter Voltage-Max | VCEsat-Max |
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![]() | Mfr. ТипVSG1C271MCB8067Anlielectronics Тип | Taiwan Chinsan Electronics Industrial Co Ltd |
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Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| VSG1C271MCB8067 Taiwan Chinsan Electronics Industrial Co Ltd
RoHS :
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![]() | Mfr. ТипDIM50CHS12-E000Anlielectronics Тип | Dynex Semiconductor |
Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, C, 7 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 7 | SILICON | DYNEX SEMICONDUCTOR LTD | 2 | - | UNSPECIFIED | FLANGE MOUNT, R-XUFM-X7 | RECTANGULAR | FLANGE MOUNT | Contact Manufacturer | - | Yes | 850 ns | 300 ns | Yes | EAR99 | LOW CONDUCTION LOSS | UPPER | UNSPECIFIED | NOT SPECIFIED | unknown | NOT SPECIFIED | 7 | R-XUFM-X7 | Not Qualified | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | POWER CONTROL | N-CHANNEL | - | 50 A | 1200 V | - | - | ||
| DIM50CHS12-E000 | |||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипDIM1200DDM17-E000Anlielectronics Тип | Dynex Semiconductor |
Insulated Gate Bipolar Transistor, 1200A I(C), 1700V V(BR)CES, N-Channel, PLASTIC, D, 10 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 10 | SILICON | DYNEX SEMICONDUCTOR LTD | 2 | - | PLASTIC/EPOXY | FLANGE MOUNT, R-PUFM-X10 | RECTANGULAR | FLANGE MOUNT | Contact Manufacturer | - | Yes | 1600 ns | 1150 ns | Yes | EAR99 | LOW CONDUCTION LOSS, HIGH RELIABILITY | UPPER | UNSPECIFIED | NOT SPECIFIED | unknown | NOT SPECIFIED | 10 | R-PUFM-X10 | Not Qualified | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | POWER CONTROL | N-CHANNEL | - | 1200 A | 1700 V | - | - | ||
| DIM1200DDM17-E000 | |||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипDIM375WLS06-S000Anlielectronics Тип | Dynex Semiconductor |
Insulated Gate Bipolar Transistor, 375A I(C), 600V V(BR)CES, N-Channel, W, 7 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 7 | SILICON | DYNEX SEMICONDUCTOR LTD | 1 | - | UNSPECIFIED | FLANGE MOUNT, R-XUFM-X7 | RECTANGULAR | FLANGE MOUNT | Contact Manufacturer | - | Yes | 1150 ns | 300 ns | Yes | EAR99 | - | UPPER | UNSPECIFIED | NOT SPECIFIED | unknown | NOT SPECIFIED | 7 | R-XUFM-X7 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ISOLATED | MOTOR CONTROL | N-CHANNEL | - | 375 A | 600 V | - | - | ||
| DIM375WLS06-S000 | |||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипDIM150WHS12-E000Anlielectronics Тип | Dynex Semiconductor |
Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, W, MODULE-7
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 7 | SILICON | DYNEX SEMICONDUCTOR LTD | 2 | - | UNSPECIFIED | FLANGE MOUNT, R-XUFM-X7 | RECTANGULAR | FLANGE MOUNT | Contact Manufacturer | MODULE | Yes | 850 ns | 300 ns | Yes | EAR99 | LOW CONDUCTION LOSS | UPPER | UNSPECIFIED | NOT SPECIFIED | unknown | NOT SPECIFIED | 7 | R-XUFM-X7 | Not Qualified | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | MOTOR CONTROL | N-CHANNEL | - | 150 A | 1200 V | - | - | ||
| DIM150WHS12-E000 | |||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Тип5SNS0200V120100Anlielectronics Тип | ABB Semiconductors |
Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 22 | - | ABB LTD | 1 | 150 °C | UNSPECIFIED | FLANGE MOUNT, R-XUFM-X22 | RECTANGULAR | FLANGE MOUNT | Active | - | - | - | - | - | EAR99 | - | UPPER | UNSPECIFIED | - | compliant | - | - | R-XUFM-X22 | Not Qualified | - | - | - | - | 625 W | 200 A | 1200 V | 20 V | 2.3 V | ||
| 5SNS0200V120100 | |||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Тип5SNS0225U170100Anlielectronics Тип | ABB Semiconductors |
Insulated Gate Bipolar Transistor, 225A I(C), 1700V V(BR)CES, N-Channel, LOPAK-39
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 39 | SILICON | ABB LTD | 6 | 150 °C | UNSPECIFIED | FLANGE MOUNT, R-XUFM-X39 | RECTANGULAR | FLANGE MOUNT | Active | - | - | 710 ns | 290 ns | - | EAR99 | - | UPPER | UNSPECIFIED | - | compliant | - | 39 | R-XUFM-X39 | Not Qualified | 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR | ISOLATED | MOTOR CONTROL | N-CHANNEL | 830 W | 225 A | 1700 V | 20 V | 2.8 V | ||
| 5SNS0225U170100 | |||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипDIM400XCM45-TS001Anlielectronics Тип | Dynex Semiconductor |
Insulated Gate Bipolar Transistor, 400A I(C), 4500V V(BR)CES
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | DYNEX SEMICONDUCTOR LTD | 1 | 125 °C | - | , | - | - | Contact Manufacturer | - | Yes | - | - | - | EAR99 | - | - | - | - | unknown | - | - | - | - | - | - | - | - | 4160 W | 400 A | 4500 V | 20 V | - | ||
| DIM400XCM45-TS001 | |||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Тип5SNA1000G450300Anlielectronics Тип | ABB Semiconductors |
Insulated Gate Bipolar Transistor, 1000A I(C), 4500V V(BR)CES, N-Channel, HIPAK-9
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 9 | SILICON | ABB LTD | 3 | 125 °C | UNSPECIFIED | FLANGE MOUNT, R-XUFM-X9 | RECTANGULAR | FLANGE MOUNT | Active | - | - | 2370 ns | 740 ns | - | EAR99 | - | UPPER | UNSPECIFIED | - | compliant | - | 9 | R-XUFM-X9 | Not Qualified | COMPLEX | ISOLATED | - | N-CHANNEL | - | 1000 A | 4500 V | - | - | ||
| 5SNA1000G450300 | |||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипDIM1500ASM33-TL001Anlielectronics Тип | Dynex Semiconductor |
Description: Insulated Gate Bipolar Transistor, 1500A I(C), 3300V V(BR)CES
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | DYNEX SEMICONDUCTOR LTD | 3 | 150 °C | - | , | - | - | Contact Manufacturer | - | Yes | - | - | - | EAR99 | - | - | - | - | unknown | - | - | - | - | - | - | - | - | 15600 W | 1500 A | 3300 V | 20 V | - | ||
| DIM1500ASM33-TL001 | |||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипDIM375WHS06-S000Anlielectronics Тип | Dynex Semiconductor |
Insulated Gate Bipolar Transistor, 375A I(C), 600V V(BR)CES, N-Channel, W, 7 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 7 | SILICON | DYNEX SEMICONDUCTOR LTD | 2 | - | UNSPECIFIED | FLANGE MOUNT, R-XUFM-X7 | RECTANGULAR | FLANGE MOUNT | Contact Manufacturer | - | Yes | 1150 ns | 300 ns | Yes | EAR99 | - | UPPER | UNSPECIFIED | NOT SPECIFIED | unknown | NOT SPECIFIED | 7 | R-XUFM-X7 | Not Qualified | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | MOTOR CONTROL | N-CHANNEL | - | 375 A | 600 V | - | - | ||
| DIM375WHS06-S000 | |||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипDIM1200ASM45-TS001Anlielectronics Тип | Dynex Semiconductor |
Description: Insulated Gate Bipolar Transistor, 1200A I(C), 4500V V(BR)CES
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | DYNEX SEMICONDUCTOR LTD | 3 | 125 °C | - | , | - | - | Contact Manufacturer | - | Yes | - | - | - | EAR99 | - | - | - | - | unknown | - | - | - | - | - | - | - | - | 12500 W | 1200 A | 4500 V | 20 V | - | ||
| DIM1200ASM45-TS001 | |||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипDIM1500ASM33-TS001Anlielectronics Тип | Dynex Semiconductor |
Insulated Gate Bipolar Transistor, 1500A I(C), 3300V V(BR)CES
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | DYNEX SEMICONDUCTOR LTD | 3 | 150 °C | - | , | - | - | Contact Manufacturer | - | Yes | - | - | - | EAR99 | - | - | - | - | unknown | - | - | - | - | - | - | - | - | 15600 W | 1500 A | 3300 V | 20 V | - | ||
| DIM1500ASM33-TS001 |
Индекс :
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