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| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Lifecycle Status | Surface Mount | Number of Terminals | Transistor Element Material | Exterior Housing Material | Case/Package | Drain Current-Max (ID) | hFEMin | Ihs Manufacturer | Number of Elements | Operating Temperature-Max | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | RoHS | Rohs Code | Transition Frequency-Nom (fT) | JESD-609 Code | Pbfree Code | ECCN Code | Terminal Finish | Max Operating Temperature | Additional Feature | Max Power Dissipation | Terminal Position | Terminal Form | Reach Compliance Code | Pin Count | JESD-30 Code | Qualification Status | Polarity | Configuration | Element Configuration | Operating Mode | Transistor Application | Gain Bandwidth Product | Polarity/Channel Type | Collector Emitter Voltage (VCEO) | Max Collector Current | JEDEC-95 Code | Drain-source On Resistance-Max | Transition Frequency | DS Breakdown Voltage-Min | FET Technology | Collector Base Voltage (VCBO) | Power Dissipation-Max (Abs) | Emitter Base Voltage (VEBO) | Collector Current-Max (IC) | DC Current Gain-Min (hFE) | Feedback Cap-Max (Crss) |
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  | Mfr. ТипBF822Anlielectronics Тип | Central Semiconductor Corp |
Transistor
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | - | 1 | - | - | - | CENTRAL SEMICONDUCTOR CORP | - | 150 °C | - | - | - | - | Active | - | - | No | - | e0 | - | EAR99 | Tin/Lead (Sn80Pb20) | - | - | - | - | - | not_compliant | - | - | - | - | SINGLE | - | - | - | - | NPN | - | - | - | - | - | - | - | - | 0.31 W | - | 0.1 A | 50 | - | ||
| BF822 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Тип2N4437Anlielectronics Тип | Central Semiconductor Corp |
Transistor,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | NO | - | - | - | - | - | - | CENTRAL SEMICONDUCTOR CORP | 1 | 125 °C | - | - | - | - | Active | - | - | No | 250 MHz | e0 | - | EAR99 | Tin/Lead (Sn/Pb) | - | - | - | - | - | not_compliant | - | - | - | - | SINGLE | - | - | - | - | NPN | - | - | - | - | - | - | - | - | 0.2 W | - | 0.5 A | 100 | - | ||
| 2N4437 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Тип2N3693Anlielectronics Тип | Central Semiconductor Corp |
Description: Transistor
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | NO | - | - | - | - | - | - | CENTRAL SEMICONDUCTOR CORP | 1 | 150 °C | - | - | - | - | Active | - | - | No | 200 MHz | e0 | - | EAR99 | Tin/Lead (Sn/Pb) | - | - | - | - | - | not_compliant | - | - | - | - | SINGLE | - | - | - | - | NPN | - | - | - | - | - | - | - | - | 0.62 W | - | 0.2 A | 90 | - | ||
| 2N3693 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипPN4392 TRE PBFREEAnlielectronics Тип | Central Semiconductor Corp |
-
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| PN4392 TRE PBFREE | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Тип2N5379Anlielectronics Тип | Central Semiconductor Corp |
Transistor
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | NO | - | - | - | - | - | - | CENTRAL SEMICONDUCTOR CORP | 1 | 140 °C | - | - | - | - | Active | - | - | No | 200 MHz | e0 | - | EAR99 | Tin/Lead (Sn/Pb) | - | - | - | - | - | not_compliant | - | - | - | - | SINGLE | - | - | - | - | PNP | - | - | - | - | - | - | - | - | 0.36 W | - | 0.5 A | - | - | ||
| 2N5379 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипCMPDM3590Anlielectronics Тип | Central Semiconductor Corp |
Small Signal Field-Effect Transistor, 0.16A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | 3 | SILICON | - | - | 0.16 A | - | CENTRAL SEMICONDUCTOR CORP | 1 | 150 °C | PLASTIC/EPOXY | HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 | RECTANGULAR | SMALL OUTLINE | Active | - | - | - | - | - | - | EAR99 | - | - | LOGIC LEVEL COMPATIBLE | - | DUAL | GULL WING | compliant | 3 | R-PDSO-G3 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | SWITCHING | - | N-CHANNEL | - | - | - | 3 Ω | - | 20 V | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | ||
| CMPDM3590 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Тип2N1420AAnlielectronics Тип | Central Semiconductor Corp |
Transistor
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | NO | - | - | - | - | - | - | CENTRAL SEMICONDUCTOR CORP | 1 | 200 °C | - | - | - | - | Obsolete | - | - | No | - | e0 | - | EAR99 | Tin/Lead (Sn/Pb) | - | - | - | - | - | unknown | - | - | - | - | SINGLE | - | - | - | - | NPN | - | - | - | - | - | - | - | - | 0.8 W | - | 1 A | 100 | - | ||
| 2N1420A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипCMKDM3575Anlielectronics Тип | Central Semiconductor Corp |
Small Signal Field-Effect Transistor, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, ULTRAMINI-6
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | 6 | SILICON | - | - | - | - | CENTRAL SEMICONDUCTOR CORP | 2 | - | PLASTIC/EPOXY | HALOGEN FREE AND ROHS COMPLIANT, ULTRAMINI-6 | RECTANGULAR | SMALL OUTLINE | Active | - | - | - | - | - | - | EAR99 | - | - | LOGIC LEVEL COMPATIBLE | - | DUAL | GULL WING | compliant | 6 | R-PDSO-G6 | Not Qualified | - | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | SWITCHING | - | N-CHANNEL AND P-CHANNEL | - | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | ||
| CMKDM3575 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипCMPDM7120GAnlielectronics Тип | Central Semiconductor Corp |
Small Signal Field-Effect Transistor, 1A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PACKAGE-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | 3 | SILICON | - | - | 1 A | - | CENTRAL SEMICONDUCTOR CORP | 1 | 150 °C | PLASTIC/EPOXY | PACKAGE-3 | RECTANGULAR | SMALL OUTLINE | Active | - | - | No | - | e0 | No | EAR99 | TIN LEAD | - | LOGIC LEVEL COMPATIBLE | - | DUAL | GULL WING | not_compliant | 3 | R-PDSO-G3 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | SWITCHING | - | N-CHANNEL | - | - | - | 0.14 Ω | - | 20 V | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | ||
| CMPDM7120G | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипPN4093 PBFREEAnlielectronics Тип | Central Semiconductor Corp |
-
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| PN4093 PBFREE | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипCMPDM7590Anlielectronics Тип | Central Semiconductor Corp |
Small Signal Field-Effect Transistor, 0.14A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | 3 | SILICON | - | - | 0.14 A | - | CENTRAL SEMICONDUCTOR CORP | 1 | 150 °C | PLASTIC/EPOXY | HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 | RECTANGULAR | SMALL OUTLINE | Active | - | - | - | - | - | - | EAR99 | - | - | LOGIC LEVEL COMPATIBLE | - | DUAL | GULL WING | compliant | 3 | R-PDSO-G3 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | SWITCHING | - | P-CHANNEL | - | - | - | 5 Ω | - | 20 V | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | ||
| CMPDM7590 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Тип2N3921Anlielectronics Тип | Central Semiconductor Corp |
Description: Small Signal Field-Effect Transistor, N-Channel, Silicon, Junction FET, TO-71, TO-71, 8 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | NO | 8 | SILICON | - | - | - | - | CENTRAL SEMICONDUCTOR CORP | - | 200 °C | UNSPECIFIED | TO-71, 8 PIN | ROUND | CYLINDRICAL | Obsolete | TO-71 | - | No | - | e0 | No | EAR99 | TIN LEAD | - | - | - | BOTTOM | WIRE | not_compliant | 8 | O-XBCY-W8 | Not Qualified | - | - | - | DEPLETION MODE | - | - | N-CHANNEL | - | - | TO-71 | - | - | - | JUNCTION | - | 0.3 W | - | - | - | - | ||
| 2N3921 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипCMLM0305Anlielectronics Тип | Central Semiconductor Corp |
Small Signal Field-Effect Transistor, 0.28A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PICOMINI-6
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | 6 | SILICON | - | - | 0.28 A | - | CENTRAL SEMICONDUCTOR CORP | 1 | 150 °C | PLASTIC/EPOXY | PICOMINI-6 | RECTANGULAR | SMALL OUTLINE | Active | - | - | No | - | e0 | No | EAR99 | TIN LEAD | - | - | - | DUAL | FLAT | not_compliant | 6 | R-PDSO-F6 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | SWITCHING | - | N-CHANNEL | - | - | - | 3 Ω | - | 50 V | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | 5 pF | ||
| CMLM0305 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипPN4391 APM PBFREEAnlielectronics Тип | Central Semiconductor Corp |
-
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| PN4391 APM PBFREE | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Тип2N3855AAnlielectronics Тип | Central Semiconductor Corp |
Description: Transistor
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | NO | - | - | - | - | - | - | CENTRAL SEMICONDUCTOR CORP | 1 | 150 °C | - | - | - | - | Active | - | - | No | 130 MHz | e0 | - | EAR99 | Tin/Lead (Sn/Pb) | - | - | - | - | - | not_compliant | - | - | - | - | SINGLE | - | - | - | - | NPN | - | - | - | - | - | - | - | - | 0.62 W | - | 0.1 A | 60 | - | ||
| 2N3855A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипCMPDM7590TRAnlielectronics Тип | Central Semiconductor Corp |
Description: Transistor
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | - | - | - | 0.14 A | - | CENTRAL SEMICONDUCTOR CORP | 1 | 150 °C | - | - | - | - | Active | - | - | No | - | e0 | - | EAR99 | Tin/Lead (Sn80Pb20) | - | - | - | - | - | not_compliant | - | - | - | - | SINGLE | - | ENHANCEMENT MODE | - | - | P-CHANNEL | - | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | - | 0.35 W | - | - | - | - | ||
| CMPDM7590TR | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипCMPDM3590TRAnlielectronics Тип | Central Semiconductor Corp |
Description: Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | - | - | - | 0.16 A | - | CENTRAL SEMICONDUCTOR CORP | 1 | 150 °C | - | - | - | - | Active | - | - | No | - | e0 | - | EAR99 | Tin/Lead (Sn80Pb20) | - | - | - | - | - | not_compliant | - | - | - | - | SINGLE | - | ENHANCEMENT MODE | - | - | N-CHANNEL | - | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | - | 0.35 W | - | - | - | - | ||
| CMPDM3590TR | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипCMLDM8120TGAnlielectronics Тип | Central Semiconductor Corp |
Description: Small Signal Field-Effect Transistor, 0.86A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE, PICOMINI-6
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | 6 | SILICON | - | - | 0.86 A | - | CENTRAL SEMICONDUCTOR CORP | 1 | - | PLASTIC/EPOXY | HALOGEN FREE, PICOMINI-6 | RECTANGULAR | SMALL OUTLINE | Active | - | - | - | - | - | - | EAR99 | - | - | LOGIC LEVEL COMPATIBLE | - | DUAL | FLAT | compliant | 6 | R-PDSO-F6 | - | - | SINGLE WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | SWITCHING | - | P-CHANNEL | - | - | - | 0.15 Ω | - | 20 V | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | ||
| CMLDM8120TG | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипBSS64Anlielectronics Тип | Central Semiconductor Corp |
Description: Transistor
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | - | - | - | - | - | CENTRAL SEMICONDUCTOR CORP | 1 | 150 °C | - | - | - | - | Active | - | - | No | - | e0 | - | EAR99 | Tin/Lead (Sn80Pb20) | - | - | - | - | - | not_compliant | - | - | - | - | SINGLE | - | - | - | - | NPN | - | - | - | - | - | - | - | - | 0.225 W | - | 0.1 A | 20 | - | ||
| BSS64 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Тип2N2923Anlielectronics Тип | Central Semiconductor |
Small Signal Bipolar Transistor, 0.5A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Production (Last Updated: 5 months ago) | - | 3 | - | - | TO-92 | - | 90 | - | 1 | - | - | - | - | - | - | - | Non-Compliant | - | - | - | - | - | - | 150 °C | - | 360 mW | - | - | - | - | - | - | NPN | - | Single | - | - | 160 MHz | - | 25 V | 500 mA | - | - | 160 MHz | - | - | 25 V | - | 5 V | - | - | - | ||
| 2N2923 |
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