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| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Surface Mount | Number of Terminals | Transistor Element Material | Exterior Housing Material | Drain Current-Max (ID) | Ihs Manufacturer | Number of Elements | Operating Temperature-Max | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Rohs Code | JESD-609 Code | ECCN Code | Terminal Finish | HTS Code | Terminal Position | Terminal Form | Reach Compliance Code | Pin Count | JESD-30 Code | Qualification Status | Configuration | Operating Mode | Transistor Application | Polarity/Channel Type | DS Breakdown Voltage-Min | FET Technology | Power Dissipation-Max (Abs) | Highest Frequency Band | Power Dissipation Ambient-Max | Power Gain-Min (Gp) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr. ТипATF-26836Anlielectronics Тип | Agilent Technologies Inc |
Description: Transistor
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | AGILENT TECHNOLOGIES INC | - | 175 °C | - | , | - | - | Obsolete | No | e0 | EAR99 | Tin/Lead (Sn/Pb) | - | - | - | unknown | - | - | - | - | - | - | N-CHANNEL | - | JUNCTION | - | - | - | - | ||
| ATF-26836 | ||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипATF-10736-STRAnlielectronics Тип | Agilent Technologies Inc |
RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET, CERAMIC, 36, MICRO-X-4
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 4 | GALLIUM ARSENIDE | - | - | AGILENT TECHNOLOGIES INC | 1 | 175 °C | CERAMIC, METAL-SEALED COFIRED | MICROWAVE, X-CXMW-F4 | UNSPECIFIED | MICROWAVE | Obsolete | No | e0 | EAR99 | Tin/Lead (Sn/Pb) | - | UNSPECIFIED | FLAT | unknown | 4 | X-CXMW-F4 | Not Qualified | SINGLE | DEPLETION MODE | AMPLIFIER | N-CHANNEL | 5 V | JUNCTION | 0.43 W | X BAND | - | 12 dB | ||
| ATF-10736-STR | ||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипATF-13786-TR1Anlielectronics Тип | Agilent Technologies Inc |
Transistor
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | 0.1 A | AGILENT TECHNOLOGIES INC | - | 150 °C | - | - | - | - | Obsolete | No | e0 | EAR99 | Tin/Lead (Sn/Pb) | 8541.21.00.95 | - | - | unknown | - | - | - | - | - | - | N-CHANNEL | - | METAL SEMICONDUCTOR | - | - | 0.225 W | - | ||
| ATF-13786-TR1 | ||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипATF-10736-TR1Anlielectronics Тип | Agilent Technologies Inc |
RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET, CERAMIC, 36, MICRO-X-4
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 4 | GALLIUM ARSENIDE | 1 | - | AGILENT TECHNOLOGIES INC | - | 175 °C | CERAMIC, METAL-SEALED COFIRED | MICROWAVE, X-CXMW-F4 | UNSPECIFIED | MICROWAVE | Transferred | No | e0 | EAR99 | Tin/Lead (Sn/Pb) | - | UNSPECIFIED | FLAT | unknown | 4 | X-CXMW-F4 | Not Qualified | SINGLE | DEPLETION MODE | AMPLIFIER | N-CHANNEL | 5 V | JUNCTION | 0.43 W | X BAND | - | 12 dB | ||
| ATF-10736-TR1 | ||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипATF-26884-TR1Anlielectronics Тип | Agilent Technologies Inc |
Transistor
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | - | - | - | - | AGILENT TECHNOLOGIES INC | - | 150 °C | - | , | - | - | Obsolete | No | e0 | EAR99 | Tin/Lead (Sn/Pb) | - | - | - | unknown | - | - | - | - | - | - | N-CHANNEL | - | JUNCTION | 0.275 W | - | - | - | ||
| ATF-26884-TR1 | ||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипATF35176Anlielectronics Тип | Agilent Technologies Inc |
Transistor
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | AGILENT TECHNOLOGIES INC | - | 175 °C | - | , | - | - | Obsolete | No | e0 | EAR99 | Tin/Lead (Sn/Pb) | - | - | - | unknown | - | - | - | - | - | - | N-CHANNEL | - | JUNCTION | - | - | - | - | ||
| ATF35176 |
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