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| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Surface Mount | Drain Current-Max (ID) | Ihs Manufacturer | Number of Elements | Operating Temperature-Max | Package Description | Part Life Cycle Code | Rohs Code | JESD-609 Code | ECCN Code | Terminal Finish | Peak Reflow Temperature (Cel) | Reach Compliance Code | Configuration | Operating Mode | Polarity/Channel Type | FET Technology | Power Dissipation-Max (Abs) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr. ТипAF9903MSAAnlielectronics Тип | Anachip Corporation |
Transistor,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | ANACHIP CORP | - | - | , | Transferred | - | - | EAR99 | - | - | unknown | - | - | - | - | - | ||
| AF9903MSA | ||||||||||||||||||||||||
| | Mfr. ТипAF4362NSLAnlielectronics Тип | Anachip Corporation |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 18 A | ANACHIP CORP | 1 | 150 °C | , | Transferred | Yes | - | EAR99 | - | 260 | unknown | SINGLE | ENHANCEMENT MODE | N-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 2.5 W | ||
| AF4362NSL | ||||||||||||||||||||||||
| | Mfr. ТипAF2302NWAnlielectronics Тип | Anachip Corporation |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 2.4 A | ANACHIP CORP | 1 | 150 °C | , | Transferred | No | e0 | EAR99 | Tin/Lead (Sn/Pb) | - | unknown | SINGLE | ENHANCEMENT MODE | N-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 1.25 W | ||
| AF2302NW | ||||||||||||||||||||||||
| | Mfr. ТипAF4953PSLAnlielectronics Тип | Anachip Corporation |
Transistor,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 5.2 A | ANACHIP CORP | - | 150 °C | , | Transferred | Yes | - | EAR99 | - | 260 | unknown | - | ENHANCEMENT MODE | P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 2.1 W | ||
| AF4953PSL | ||||||||||||||||||||||||
| | Mfr. ТипAF2301PWAnlielectronics Тип | Anachip Corporation |
Transistor,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 2.3 A | ANACHIP CORP | 1 | 150 °C | , | Transferred | No | e0 | EAR99 | Tin/Lead (Sn/Pb) | - | unknown | SINGLE | ENHANCEMENT MODE | P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 1.25 W | ||
| AF2301PW |
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