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| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Surface Mount | Number of Terminals | Transistor Element Material | Exterior Housing Material | Allowable deviation of characteristics | Casing diameter | Drain Current-Max (ID) | Gross weight | Ihs Manufacturer | Magnet diameter | Maximum power | Number of Elements | Operating Temperature-Max | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Resonant frequency | Transition Frequency-Nom (fT) | Transport packaging size/quantity | ECCN Code | Type | Additional Feature | Terminal Position | Terminal Form | Reach Compliance Code | Pin Count | JESD-30 Code | Qualification Status | Configuration | Impedance | Operating Mode | Case Connection | Transistor Application | Polarity/Channel Type | JEDEC-95 Code | Drain-source On Resistance-Max | Frequency range | Pulsed Drain Current-Max (IDM) | DS Breakdown Voltage-Min | Avalanche Energy Rating (Eas) | FET Technology | Power Dissipation-Max (Abs) | Sensitivity | Collector Current-Max (IC) | DC Current Gain-Min (hFE) | Highest Frequency Band | Height |
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  | Mfr. ТипKMB3D9N40TAAnlielectronics Тип | KEC |
Power Field-Effect Transistor, 3.9A I(D), 40V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TSM, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 3 | SILICON | - | - | - | 3.9 A | - | KEC CORP | - | - | 1 | - | PLASTIC/EPOXY | SMALL OUTLINE, R-PDSO-G3 | RECTANGULAR | SMALL OUTLINE | Obsolete | - | - | - | - | EAR99 | - | - | DUAL | GULL WING | unknown | 3 | R-PDSO-G3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | - | 0.045 Ω | - | 16 A | 40 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | ||
| KMB3D9N40TA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Тип2SC3202Anlielectronics Тип | KEC |
Transistor
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | - | - | - | - | - | - | - | KEC CORP | - | - | 1 | - | - | , | - | - | Obsolete | - | - | - | - | EAR99 | - | - | - | - | unknown | - | - | - | SINGLE | - | - | - | - | NPN | - | - | - | - | - | - | - | 0.5 W | - | 0.5 A | 70 | - | - | ||
| 2SC3202 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипKF3N40WAnlielectronics Тип | KEC |
Description: Power Field-Effect Transistor, 2A I(D), 400V, 3.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 4 | SILICON | - | - | - | 2 A | - | KEC CORP | - | - | 1 | - | PLASTIC/EPOXY | SMALL OUTLINE, R-PDSO-G4 | RECTANGULAR | SMALL OUTLINE | Active | SOT-223 | - | - | - | EAR99 | - | - | DUAL | GULL WING | unknown | 4 | R-PDSO-G4 | - | SINGLE WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | - | 3.4 Ω | - | 6 A | 400 V | 52 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | ||
| KF3N40W | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Тип2SC3226Anlielectronics Тип | KEC |
Transistor
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | - | - | - | - | - | - | - | KEC CORP | - | - | 1 | - | - | , | - | - | Obsolete | - | - | - | - | EAR99 | - | - | - | - | unknown | - | - | - | SINGLE | - | - | - | - | NPN | - | - | - | - | - | - | - | 0.9 W | - | 2 A | 140 | - | - | ||
| 2SC3226 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипKF5N60F-U/PAnlielectronics Тип | KEC |
Power Field-Effect Transistor, 4.5A I(D), 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220IS(1), 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | - | - | - | 4.5 A | - | KEC CORP | - | - | 1 | - | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Active | - | - | - | - | EAR99 | - | - | SINGLE | THROUGH-HOLE | unknown | - | R-PSFM-T3 | - | SINGLE WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | ISOLATED | SWITCHING | N-CHANNEL | TO-220AB | 2 Ω | - | 13 A | 600 V | 140 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | ||
| KF5N60F-U/P | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипKHB9D5N20PAnlielectronics Тип | KEC |
Power Field-Effect Transistor
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | KEC CORP | - | - | - | - | - | - | - | - | Active | - | - | - | - | EAR99 | - | - | - | - | unknown | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| KHB9D5N20P | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Тип2SC4370Anlielectronics Тип | KEC |
Transistor,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | - | - | - | - | - | - | - | KEC CORP | - | - | 1 | - | - | , | - | - | Obsolete | - | - | - | - | EAR99 | - | - | - | - | unknown | - | - | - | SINGLE | - | - | - | - | NPN | - | - | - | - | - | - | - | 20 W | - | 1.5 A | 70 | - | - | ||
| 2SC4370 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипKF5N60IAnlielectronics Тип | KEC |
Power Field-Effect Transistor, 3.5A I(D), 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, IPAK(1), 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | - | - | - | 3.5 A | - | KEC CORP | - | - | 1 | 150 °C | PLASTIC/EPOXY | IN-LINE, R-PSIP-T3 | RECTANGULAR | IN-LINE | Obsolete | - | - | - | - | EAR99 | - | - | SINGLE | THROUGH-HOLE | unknown | 3 | R-PSIP-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | - | 2 Ω | - | 13 A | 600 V | 140 mJ | METAL-OXIDE SEMICONDUCTOR | 59.5 W | - | - | - | - | - | ||
| KF5N60I | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипKF5N60FAnlielectronics Тип | KEC |
Power Field-Effect Transistor, 4.5A I(D), 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220IS(1), 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | - | - | - | 4.5 A | - | KEC CORP | - | - | 1 | - | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Active | TO-220AB | - | - | - | EAR99 | - | - | SINGLE | THROUGH-HOLE | unknown | 3 | R-PSFM-T3 | - | SINGLE WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | ISOLATED | SWITCHING | N-CHANNEL | TO-220AB | 2 Ω | - | 13 A | 600 V | 140 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | ||
| KF5N60F | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипKML0D4N20TVAnlielectronics Тип | KEC |
Small Signal Field-Effect Transistor, 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TVSM, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 3 | SILICON | - | - | - | - | - | KEC CORP | - | - | 1 | - | PLASTIC/EPOXY | TVSM, 3 PIN | RECTANGULAR | SMALL OUTLINE | Active | - | - | - | - | EAR99 | - | - | DUAL | FLAT | unknown | - | R-PDSO-F3 | - | SINGLE WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | - | 0.7 Ω | - | - | 20 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | ||
| KML0D4N20TV | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипKMA2D8P20XAnlielectronics Тип | KEC |
Power Field-Effect Transistor, 20V, 0.09ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TSOP-6
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 6 | SILICON | - | - | - | - | - | KEC CORP | - | - | 1 | - | PLASTIC/EPOXY | SMALL OUTLINE, R-PDSO-G6 | RECTANGULAR | SMALL OUTLINE | Obsolete | TSOP | - | - | - | EAR99 | - | - | DUAL | GULL WING | unknown | 6 | R-PDSO-G6 | Not Qualified | SINGLE WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | - | SWITCHING | P-CHANNEL | - | 0.09 Ω | - | 11 A | 20 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | ||
| KMA2D8P20X | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипKTK920BUAnlielectronics Тип | KEC |
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, USQ, 4 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 4 | SILICON | - | - | - | 0.01 A | - | KEC CORP | - | - | 1 | - | PLASTIC/EPOXY | SMALL OUTLINE, R-PDSO-G4 | RECTANGULAR | SMALL OUTLINE | Active | - | - | - | - | EAR99 | - | - | DUAL | GULL WING | unknown | 4 | R-PDSO-G4 | - | SINGLE WITH BUILT-IN DIODE | - | DEPLETION MODE | - | SWITCHING | N-CHANNEL | - | - | - | - | 3 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | ULTRA HIGH FREQUENCY BAND | - | ||
| KTK920BU | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Тип2SC3206Anlielectronics Тип | KEC |
Description: Transistor,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | - | - | - | - | - | - | - | KEC CORP | - | - | 1 | - | - | , | - | - | Obsolete | - | - | - | - | EAR99 | - | - | - | - | unknown | - | - | - | SINGLE | - | - | - | - | NPN | - | - | - | - | - | - | - | 0.8 W | - | 0.05 A | 70 | - | - | ||
| 2SC3206 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMJD13003Anlielectronics Тип | KEC |
Transistor
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | - | - | - | - | - | - | - | KEC CORP | - | - | 1 | 150 °C | - | , | - | - | Obsolete | - | - | 4 MHz | - | EAR99 | - | - | - | - | unknown | - | - | - | SINGLE | - | - | - | - | NPN | - | - | - | - | - | - | - | 15 W | - | 1.5 A | 5 | - | - | ||
| MJD13003 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипKTK5132EAnlielectronics Тип | KEC |
Small Signal Field-Effect Transistor, 0.1A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ESM, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 3 | SILICON | - | - | - | 0.1 A | - | KEC CORP | - | - | 1 | - | PLASTIC/EPOXY | ESM, 3 PIN | RECTANGULAR | SMALL OUTLINE | Active | - | - | - | - | EAR99 | - | LOW THRESHOLD | DUAL | FLAT | unknown | 3 | R-PDSO-F3 | Not Qualified | SINGLE WITH BUILT-IN DIODE AND RESISTOR | - | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | - | 7 Ω | - | - | 30 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | ||
| KTK5132E | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипKTK598VAnlielectronics Тип | KEC |
Small Signal Field-Effect Transistor, 0.01A I(D), 1-Element, N-Channel, Silicon, Junction FET, ULTRA SMALL, VSM, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 3 | SILICON | - | - | - | 0.01 A | - | KEC CORP | - | - | 1 | - | PLASTIC/EPOXY | SMALL OUTLINE, R-PDSO-F3 | RECTANGULAR | SMALL OUTLINE | Obsolete | - | - | - | - | EAR99 | - | - | DUAL | FLAT | unknown | 3 | R-PDSO-F3 | Not Qualified | SINGLE WITH BUILT-IN DIODE AND RESISTOR | - | DEPLETION MODE | - | AMPLIFIER | N-CHANNEL | - | - | - | - | - | - | JUNCTION | - | - | - | - | - | - | ||
| KTK598V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипBCW33Anlielectronics Тип | KEC |
Description: Transistor
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | - | - | 1 | 15 % | 102 mm | - | 67.50 | KEC CORP | 32 mm | 4 W | - | 150 °C | - | , | - | - | Obsolete | - | 170 Hz | - | 42*40*22.8/100 | EAR99 | Electrodynamic head (speaker) series YD103-13 | - | - | - | unknown | - | - | - | SINGLE | 8 Ohm | - | - | - | NPN | - | - | 170 - 10000 Hz | - | - | - | - | 0.3 W | 90 dB | 0.1 A | 420 | - | 30.3 mm | ||
| BCW33 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипKTK5131E-RTK/PAnlielectronics Тип | KEC |
Small Signal Field-Effect Transistor, 0.05A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ESM, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 3 | SILICON | - | - | - | 0.05 A | - | KEC CORP | - | - | 1 | - | PLASTIC/EPOXY | ESM, 3 PIN | RECTANGULAR | SMALL OUTLINE | Active | - | - | - | - | EAR99 | - | LOW THRESHOLD | DUAL | FLAT | unknown | - | R-PDSO-F3 | - | SINGLE WITH BUILT-IN DIODE AND RESISTOR | - | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | - | 40 Ω | - | - | 30 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | ||
| KTK5131E-RTK/P | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Тип2SB1367Anlielectronics Тип | KEC |
Transistor
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | - | - | - | - | - | - | - | KEC CORP | - | - | 1 | - | - | , | - | - | Obsolete | - | - | - | - | EAR99 | - | - | - | - | unknown | - | - | - | SINGLE | - | - | - | - | PNP | - | - | - | - | - | - | - | 30 W | - | 5 A | 40 | - | - | ||
| 2SB1367 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипKMA2D4P20SAAnlielectronics Тип | KEC |
Power Field-Effect Transistor, 20V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 3 | SILICON | - | - | - | - | - | KEC CORP | - | - | 1 | - | PLASTIC/EPOXY | SMALL OUTLINE, R-PDSO-G3 | RECTANGULAR | SMALL OUTLINE | Active | SOT-23 | - | - | - | EAR99 | - | - | DUAL | GULL WING | unknown | 3 | R-PDSO-G3 | - | SINGLE WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | - | SWITCHING | P-CHANNEL | - | 0.1 Ω | - | 9 A | 20 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | ||
| KMA2D4P20SA |
Индекс :
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