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| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Surface Mount | Number of Terminals | Transistor Element Material | Exterior Housing Material | Capacitors series | Case - inch | Case - mm | Drain Current-Max (ID) | Ihs Manufacturer | Kind of capacitor | Mounting | Number of Elements | Operating Temperature-Max | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Rohs Code | Transition Frequency-Nom (fT) | Type of capacitor | Tolerance | JESD-609 Code | ECCN Code | Terminal Finish | Additional Feature | Capacitance | Terminal Position | Terminal Form | Reach Compliance Code | Pin Count | JESD-30 Code | Qualification Status | Dielectric | Configuration | Operating Mode | Case Connection | Transistor Application | Polarity/Channel Type | JEDEC-95 Code | Drain-source On Resistance-Max | Pulsed Drain Current-Max (IDM) | DS Breakdown Voltage-Min | Avalanche Energy Rating (Eas) | FET Technology | Power Dissipation-Max (Abs) | Collector Current-Max (IC) | DC Current Gain-Min (hFE) |
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  | Mfr. ТипIRFD120Anlielectronics Тип | Fairchild Semiconductor Corporation |
Small Signal Field-Effect Transistor, 1.3A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HEXDIP-4
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 4 | SILICON | 1 | KGM | 0603 | 1608 | 1.3 A | FAIRCHILD SEMICONDUCTOR CORP | MLCC | SMD | - | 150 °C | PLASTIC/EPOXY | HEXDIP-4 | RECTANGULAR | IN-LINE | Obsolete | DIP | No | - | ceramic | ±2% | e0 | EAR99 | TIN LEAD | - | 1nF | DUAL | THROUGH-HOLE | unknown | 4 | R-PDIP-T4 | Not Qualified | C0G (NP0) | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | - | 0.3 Ω | - | 100 V | - | METAL-OXIDE SEMICONDUCTOR | 1 W | - | - | ||
| IRFD120 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIRL630Anlielectronics Тип | Fairchild Semiconductor Corporation |
Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | 1 | - | - | - | 9 A | FAIRCHILD SEMICONDUCTOR CORP | - | - | - | 150 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Obsolete | TO-220AB | No | - | - | - | e0 | EAR99 | TIN LEAD | LOGIC LEVEL COMPATIBLE | - | SINGLE | THROUGH-HOLE | unknown | 3 | R-PSFM-T3 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | TO-220AB | 0.4 Ω | 32 A | 200 V | 54 mJ | METAL-OXIDE SEMICONDUCTOR | 75 W | - | - | ||
| IRL630 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипFQP10N60CFAnlielectronics Тип | Fairchild Semiconductor Corporation |
Power Field-Effect Transistor, 9A I(D), 600V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | - | - | - | - | 9 A | FAIRCHILD SEMICONDUCTOR CORP | - | - | 1 | 150 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Obsolete | TO-220AB | - | - | - | - | - | EAR99 | - | - | - | SINGLE | THROUGH-HOLE | unknown | 3 | R-PSFM-T3 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | TO-220AB | 0.8 Ω | 36 A | 600 V | 583 mJ | METAL-OXIDE SEMICONDUCTOR | 169 W | - | - | ||
| FQP10N60CF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип2N6026Anlielectronics Тип | Fairchild Semiconductor Corporation |
Description: Transistor,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | - | - | - | - | - | - | - | FAIRCHILD SEMICONDUCTOR CORP | - | - | 1 | 150 °C | - | - | - | - | Obsolete | - | No | 0.8 MHz | - | - | e0 | EAR99 | Tin/Lead (Sn/Pb) | - | - | - | - | compliant | - | - | - | - | SINGLE | - | - | - | PNP | - | - | - | - | - | - | 36 W | 4 A | 20 | ||
| 2N6026 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSSW2N80AAnlielectronics Тип | Fairchild Semiconductor Corporation |
Description: Power Field-Effect Transistor, 2A I(D), 800V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 2 | SILICON | - | - | - | - | 2 A | FAIRCHILD SEMICONDUCTOR CORP | - | - | 1 | 150 °C | PLASTIC/EPOXY | SMALL OUTLINE, R-PSSO-G2 | RECTANGULAR | SMALL OUTLINE | Obsolete | - | No | - | - | - | e0 | EAR99 | TIN LEAD | - | - | SINGLE | GULL WING | unknown | 3 | R-PSSO-G2 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | - | 6 Ω | 8 A | 800 V | 213 mJ | METAL-OXIDE SEMICONDUCTOR | 80 W | - | - | ||
| SSW2N80A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипSSH10N60BAnlielectronics Тип | Fairchild Semiconductor Corporation |
Power Field-Effect Transistor, 10A I(D), 600V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | - | - | - | - | 10 A | FAIRCHILD SEMICONDUCTOR CORP | - | - | 1 | 150 °C | PLASTIC/EPOXY | TO-3P, 3 PIN | RECTANGULAR | FLANGE MOUNT | Obsolete | TO-3P | Yes | - | - | - | e3 | EAR99 | MATTE TIN | - | - | SINGLE | THROUGH-HOLE | unknown | 3 | R-PSFM-T3 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | - | 0.8 Ω | 40 A | 600 V | 520 mJ | METAL-OXIDE SEMICONDUCTOR | 193 W | - | - | ||
| SSH10N60B | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Тип2N3110Anlielectronics Тип | Fairchild Semiconductor Corporation |
Transistor,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | - | - | - | - | - | - | - | FAIRCHILD SEMICONDUCTOR CORP | - | - | 1 | 175 °C | - | - | - | - | Obsolete | - | No | 60 MHz | - | - | e0 | EAR99 | Tin/Lead (Sn/Pb) | - | - | - | - | compliant | - | - | - | - | SINGLE | - | - | - | NPN | - | - | - | - | - | - | 0.8 W | 1 A | 40 | ||
| 2N3110 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипSSS2N90AAnlielectronics Тип | Fairchild Semiconductor Corporation |
Power Field-Effect Transistor, 1.5A I(D), 900V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220F, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | - | - | - | - | 1.5 A | FAIRCHILD SEMICONDUCTOR CORP | - | - | 1 | 150 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Obsolete | TO-220F | No | - | - | - | e0 | EAR99 | TIN LEAD | - | - | SINGLE | THROUGH-HOLE | unknown | 3 | R-PSFM-T3 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | ISOLATED | SWITCHING | N-CHANNEL | - | 7 Ω | 8 A | 900 V | 214 mJ | METAL-OXIDE SEMICONDUCTOR | 30 W | - | - | ||
| SSS2N90A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSSH9N90AAnlielectronics Тип | Fairchild Semiconductor Corporation |
Power Field-Effect Transistor, 9A I(D), 900V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | - | - | - | - | 9 A | FAIRCHILD SEMICONDUCTOR CORP | - | - | 1 | 150 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Obsolete | TO-3P | No | - | - | - | e0 | EAR99 | TIN LEAD | - | - | SINGLE | THROUGH-HOLE | unknown | 3 | R-PSFM-T3 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | - | 1.4 Ω | 36 A | 900 V | 772 mJ | METAL-OXIDE SEMICONDUCTOR | 280 W | - | - | ||
| SSH9N90A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипRFP15P06Anlielectronics Тип | Fairchild Semiconductor Corporation |
Power Field-Effect Transistor, 15A I(D), 60V, 0.15ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | - | - | - | - | 15 A | FAIRCHILD SEMICONDUCTOR CORP | - | - | 1 | 175 °C | PLASTIC/EPOXY | - | RECTANGULAR | FLANGE MOUNT | Obsolete | - | No | - | - | - | e0 | EAR99 | TIN LEAD | MEGAFET | - | SINGLE | THROUGH-HOLE | compliant | - | R-PSFM-T3 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | P-CHANNEL | TO-220AB | 0.15 Ω | - | 60 V | - | METAL-OXIDE SEMICONDUCTOR | 80 W | - | - | ||
| RFP15P06 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSSP10N60AAnlielectronics Тип | Fairchild Semiconductor Corporation |
Power Field-Effect Transistor, 9A I(D), 600V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | - | - | - | - | 9 A | FAIRCHILD SEMICONDUCTOR CORP | - | - | 1 | 150 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Obsolete | TO-220AB | Yes | - | - | - | e3 | EAR99 | MATTE TIN | - | - | SINGLE | THROUGH-HOLE | unknown | 3 | R-PSFM-T3 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | TO-220AB | 0.8 Ω | 36 A | 600 V | 442 mJ | METAL-OXIDE SEMICONDUCTOR | 156 W | - | - | ||
| SSP10N60A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIRFI630AAnlielectronics Тип | Fairchild Semiconductor Corporation |
Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, I2PAK-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | - | - | - | - | 9 A | FAIRCHILD SEMICONDUCTOR CORP | - | - | 1 | 150 °C | PLASTIC/EPOXY | IN-LINE, R-PSIP-T3 | RECTANGULAR | IN-LINE | Obsolete | - | No | - | - | - | e0 | EAR99 | TIN LEAD | - | - | SINGLE | THROUGH-HOLE | unknown | 3 | R-PSIP-T3 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | - | 0.4 Ω | 36 A | 200 V | 162 mJ | METAL-OXIDE SEMICONDUCTOR | 3.1 W | - | - | ||
| IRFI630A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSSS2N80AAnlielectronics Тип | Fairchild Semiconductor Corporation |
Description: Power Field-Effect Transistor, 1.5A I(D), 800V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220F, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | - | - | - | - | 1.5 A | FAIRCHILD SEMICONDUCTOR CORP | - | - | 1 | 150 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Obsolete | TO-220F | No | - | - | - | e0 | EAR99 | TIN LEAD | - | - | SINGLE | THROUGH-HOLE | unknown | 3 | R-PSFM-T3 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | ISOLATED | SWITCHING | N-CHANNEL | - | 6 Ω | 8 A | 800 V | 216 mJ | METAL-OXIDE SEMICONDUCTOR | 30 W | - | - | ||
| SSS2N80A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSSW1N50AAnlielectronics Тип | Fairchild Semiconductor Corporation |
Power Field-Effect Transistor, 1.5A I(D), 500V, 5.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 2 | SILICON | - | - | - | - | 1.5 A | FAIRCHILD SEMICONDUCTOR CORP | - | - | 1 | 150 °C | PLASTIC/EPOXY | SMALL OUTLINE, R-PSSO-G2 | RECTANGULAR | SMALL OUTLINE | Obsolete | - | No | - | - | - | e0 | EAR99 | TIN LEAD | - | - | SINGLE | GULL WING | unknown | 3 | R-PSSO-G2 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | - | 5.5 Ω | 5 A | 500 V | 113 mJ | METAL-OXIDE SEMICONDUCTOR | 36 W | - | - | ||
| SSW1N50A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSSF7N90AAnlielectronics Тип | Fairchild Semiconductor Corporation |
Power Field-Effect Transistor, 5A I(D), 900V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | - | - | - | - | 5 A | FAIRCHILD SEMICONDUCTOR CORP | - | - | 1 | - | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Obsolete | TO-3P | - | - | - | - | - | EAR99 | - | - | - | SINGLE | THROUGH-HOLE | unknown | 3 | R-PSFM-T3 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | - | 1.8 Ω | 28 A | 900 V | 794 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | ||
| SSF7N90A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипFQB12N20Anlielectronics Тип | Fairchild Semiconductor Corporation |
Description: Power Field-Effect Transistor, 11.6A I(D), 200V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 2 | SILICON | - | - | - | - | 11.6 A | FAIRCHILD SEMICONDUCTOR CORP | - | - | 1 | 150 °C | PLASTIC/EPOXY | D2PAK-3 | RECTANGULAR | SMALL OUTLINE | Obsolete | TO-263 | No | - | - | - | e0 | EAR99 | Tin/Lead (Sn/Pb) | - | - | SINGLE | GULL WING | compliant | 3 | R-PSSO-G2 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | TO-263AB | 0.28 Ω | 46.4 A | 200 V | 210 mJ | METAL-OXIDE SEMICONDUCTOR | 90 W | - | - | ||
| FQB12N20 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSSU4N60BAnlielectronics Тип | Fairchild Semiconductor Corporation |
Description: Power Field-Effect Transistor, 2.8A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | - | - | - | - | 2.8 A | FAIRCHILD SEMICONDUCTOR CORP | - | - | 1 | 150 °C | PLASTIC/EPOXY | IPAK-3 | RECTANGULAR | IN-LINE | Obsolete | TO-251 | No | - | - | - | e0 | EAR99 | TIN LEAD | - | - | SINGLE | THROUGH-HOLE | compliant | 3 | R-PSIP-T3 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | TO-251 | 2.5 Ω | 11.2 A | 600 V | 240 mJ | METAL-OXIDE SEMICONDUCTOR | 49 W | - | - | ||
| SSU4N60B | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипNDP710AAnlielectronics Тип | Fairchild Semiconductor Corporation |
Description: Power Field-Effect Transistor, 42A I(D), 100V, 0.038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | - | - | - | - | 42 A | FAIRCHILD SEMICONDUCTOR CORP | - | - | 1 | 175 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Obsolete | TO-220AB | No | - | - | - | e0 | EAR99 | TIN LEAD | - | - | SINGLE | THROUGH-HOLE | unknown | 3 | R-PSFM-T3 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | TO-220AB | 0.038 Ω | 168 A | 100 V | - | METAL-OXIDE SEMICONDUCTOR | 150 W | - | - | ||
| NDP710A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипFDMC80151Anlielectronics Тип | Fairchild Semiconductor Corporation |
-
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| FDMC80151 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSSR2N60ATMAnlielectronics Тип | Fairchild Semiconductor Corporation |
Description: Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | - | - | - | - | - | - | 1.8 A | FAIRCHILD SEMICONDUCTOR CORP | - | - | 1 | 150 °C | - | , | - | - | Obsolete | - | No | - | - | - | e0 | EAR99 | Tin/Lead (Sn/Pb) | - | - | - | - | unknown | - | - | - | - | SINGLE | ENHANCEMENT MODE | - | - | N-CHANNEL | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | 44 W | - | - | ||
| SSR2N60ATM |
Индекс :
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